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oe1(光电查) - 科学论文

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  • Suggestions on Efficiency Droop of GaN-based LEDs

    摘要： InGaN/GaN-based light-emitting diodes (LEDs) are widely used in modern society and industry among different areas. However, InGaN/GaN LEDs suffer from an efficiency droop issue: The internal efficiency decreases during high current injection. The efficiency droop significantly affects the development of GaN-based LEDs devices in efficiency and light-output areas. Therefore, the improvement of the droop phenomenon has become a significant topic. This paper introduces several possible mechanisms of droop phenomenon based on different hypotheses including Auger Recombination, Carrier Delocalization and Electron Leakage. Furthermore, some proposals to mitigate efficiency droop, including semipolar LEDs, electron blocking layer(EBL), quaternary alloy and chip design will be discussed and analyzed. Also, it will provide some suggestions for the further optimization of droop phenomenon in each proposal.

    关键词： electron blocking layer,semipolar LEDs,GaN-based LEDs,Auger Recombination,chip design,quaternary alloy,Carrier Delocalization,Electron Leakage,efficiency droop

    更新于2025-09-23 15:21:01

  • Fabricating GaN-based LEDs on (?2 0 1) <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

    摘要： This study demonstrates two approaches to the growth of GaN-based LEDs on (?2 0 1)-oriented β-Ga2O3 single crystal substrates using metal-organic CVD under atmospheric pressure. One approach induces non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, whereas the other approach induces continuous growth. We observed the following reduction in the FWHM of X-ray diffraction rocking curves: GaN (0 0 2) on (?2 0 1) β-Ga2O3 substrate (from 464 to 342 arcsec) and GaN (1 0 2) (from 886 to 493 arcsec). An LED with six pairs of InGaN/GaN multiple quantum wells was successfully fabricated on the (?2 0 1) β-Ga2O3 single crystal substrate.

    关键词： metal-organic chemical vapor deposition,X-ray diffraction,β-Ga2O3 substrate,non-continuous/continuous growth,GaN-based LEDs

    更新于2025-09-11 14:15:04