研究目的
Investigating the mechanisms behind the efficiency droop in GaN-based LEDs and proposing solutions to mitigate this phenomenon.
研究成果
The efficiency droop in GaN-based LEDs is a complex phenomenon potentially caused by several interrelated factors, including Auger recombination, carrier delocalization, and electron leakage. Proposed solutions like semipolar LEDs, EBL, quaternary alloys, and chip design show promise but require further optimization and research to fully address the droop issue.
研究不足
The paper acknowledges the ongoing debate over the primary mechanisms causing efficiency droop and the need for further research to optimize proposed solutions, such as the applicable electrical current range of EBL, growth methods for quaternary alloys, and improvements in microchip designs.
