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[IEEE 2018 IEEE International Semiconductor Laser Conference (ISLC) - Santa Fe, NM (2018.9.16-2018.9.19)] 2018 IEEE International Semiconductor Laser Conference (ISLC) - High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW
摘要： We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.
关键词： gallium nitride,amplified spontaneous emission (ASE),superluminescent diode (SLD),laser diode
更新于2025-11-28 14:23:57
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Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition
摘要： The growth mechanism of V-defects in GaN films was investigated. It was observed that the crystal faces of both the sidewall of a V-defect and the sidewall of the GaN film boundary belong to the same plane family of {10￣11}, which suggests that the formation of the V-defect is a direct consequence of spontaneous growth like that of the boundary facet. However, the growth rate of the V-defect sidewall is much faster than that of the boundary facet when the V-defect is filling up, implying that lateral growth of {10￣11} planes is not the direct cause of the change in size of V-defects. Since V-defects originate from dislocations, an idea was proposed to correlate the growth of V-defects with the presence of dislocations. Specifically, the change in size of the V-defect is determined by the growth rate around dislocations and the growth rate around dislocations is determined by the growth conditions.
关键词： transmission electron microscopy,threading dislocations,gallium nitride
更新于2025-11-14 17:04:02
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Structural and Optical Properties of AlN/GaN and AlN/AlGaN/GaN thin films on Silicon Substrate prepared by Plasma Assisted Molecular Beam Epitaxy (MBE)
摘要： In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam epitaxy (MBE) on silicon substrate. Gallium (7N) and Aluminium (6N5) of high purity were used to grow GaN, AlN and AlGaN respectively. The structural and optical properties of the prepared AlN/GaN and AlN/AlGaN/GaN layer heterostructures were investigated by means of atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence spectroscopy (PL) and Raman spectroscopy. AFM measurement demonstrated that the root mean square of surface roughness for AlN/GaN and AlN/AlGaN/GaN heterostructures are 3.677 nm and 10.333 nm respectively. XRD data indicated that the samples have typical diffraction pattern of hexagonal structure. Raman spectra revealed all four Raman-active modes present inside both samples. PL spectra data showed the yellow luminescence which corresponds to the deep energy levels due to imperfections of AlN did not appear. Thus, PL observation indicated that the thin film of AlN/GaN and AlN/AlGaN/GaN layers have good optical quality and looks promising for various target applications in optoelectronics, photovoltaic and radiofrequency applications.
关键词： silicon,thin film,MBE,Aluminium Nitride,Gallium Nitride,Aluminium Gallium Nitride
更新于2025-09-23 15:23:52
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Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature
摘要： Heteroepitaxy with large thermal and lattice mismatch between the semiconductor and substrate is a critical issue for high-quality epitaxial growth. Typically, high growth temperatures (>1000 °C) are required to achieve high-quality GaN epilayers by conventional metal?organic chemical vapor deposition. In this study, the high-quality GaN heteroepitaxy is realized by atomic layer annealing and epitaxy (ALAE) at a low growth temperature of 300 °C. The layer-by-layer, in situ He/Ar plasma treatment at a low plasma power was introduced in each cycle of atomic layer deposition to contribute the e?ective annealing e?ect for signi?cant enhancement of the GaN crystal quality. The Penning e?ect is responsible for signi?cant improvement of the GaN crystal quality due to the incorporation of He into the Ar plasma. The high-resolution transmission electron microscopy, nano-beam electron di?raction, and atomic force microscopy reveal a high-quality nanoscale single-crystal GaN heteroepitaxy and a very smooth surface. The full width at half-maximum of the X-ray rocking curve of the GaN epilayer is as low as 168 arcsec. The low-temperature ALAE technique is highly bene?cial to grow high-quality nanoscale GaN epilayers for sustainable, energy-saving, and energy-e?cient devices including high-performance solid-state lighting, solar cells, and high-power electronics.
关键词： Atomic layer annealing,Atomic layer deposition,Gallium nitride,Atomic layer epitaxy,Plasma treatment
更新于2025-09-23 15:23:52
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Threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes with high temperature stability
摘要： This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was ascribed to the conductive path formed by traps in the insulating layer at the regrowth interface after soft breakdown. The device can reliably switch more than 1000 cycles at both room temperature and 300 oC with small fluctuation on the set and reset voltage. The set voltage increased with the increasing temperature due to the enhanced thermal detrapping effect that made it harder to form conductive path at high temperatures. Besides, the device showed memory behaviors when the reset voltage was higher than 4.4 V. This work can serve as important references to further developing GaN-based memory devices and integrated circuits.
关键词： memory,breakdown,wide bandgap semiconductor,threshold switching,p-n diodes,Gallium nitride
更新于2025-09-23 15:22:29
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Improvement in Light Extraction Efficiency of InGaN/GaN Blue Light Emitting Diodes Using Sidewall Texturing
摘要： Herein, we reported the effects of the geometric morphology of the sidewall on the extraction ef?ciency of GaN-based light-emitting diodes (LEDs). We performed numerical analysis based on the ray-tracing method. We found that the extraction ef?ciency of the LEDs increased with the texturing of the sidewall. The light output intensity of the LEDs (at an injection current of 100 mA) increased by 13.8% after sidewall texturing. These results con?rmed that the geometric morphology of the sidewall plays an important role in improving the extraction ef?ciency of LEDs.
关键词： Texturing,Light Emitting Diodes,Gallium Nitride,Light Extraction Ef?ciency
更新于2025-09-23 15:22:29
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GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review
摘要： In many leading industrial applications such as aerospace, military, automotive, and deep-well drilling, extreme temperature environment is the fundamental hindrance to the use of microelectronic devices. Developing an advanced technology with robust electrical and material properties dedicated for high-temperature environments represents a significant progress allowing to control and monitor the harsh environment regions. It may avoid using cooling structures while improving the reliability of the whole electronic systems. As a wide bandgap semiconductor, gallium nitride is considered as an ideal candidate for such environments, as well as in high-power and high-frequency applications. We review in this paper the main reasons that offer superiority to GaN devices over better-known technologies such as silicon (Si), silicon-on-insulator, gallium arsenide (GaAs), silicon germanium (SiGe), and silicon carbide (SiC). The theory of operation and main challenges at high temperature are discussed, notably those related to materials and contacts. In addition, the main limitations of GaN, including the technological (thermal and chemical) and intrinsic (current collapse and device self-heating) features are provided. In addition, the GaN devices recently developed for high-temperature applications are examined.
关键词： wide-bandgap semiconductors,high-temperature electronics,Extreme temperature applications,gallium-nitride technology
更新于2025-09-23 15:22:29
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AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
摘要： Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.
关键词： interface traps,MISHEMT,gallium nitride,PECVD,current collapse,dielectric layer
更新于2025-09-23 15:22:29
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Photodeposition of palladium nanoparticles on a porous gallium nitride electrode for nonenzymatic electrochemical sensing of glucose
摘要： A nonenzymatic electrochemical glucose sensor is described that was obtained by in situ photodeposition of high-density and uniformly distributed palladium nanoparticles (PdNPs) on a porous gallium nitride (PGaN) electrode. Cyclic voltammetric and chronoamperometric techniques were used to characterize the performance of the modified electrode toward glucose. In 0.1 M NaOH solution, it has two linear detection ranges, one from 1 μM to 1 mM, and another from 1 to 10 mM, and the detection limit is 1 μM. The electrode is repeatable, highly sensitive, fast and long-term stable. It was applied to the quantitation of serum glucose where it displayed accurate current responses.
关键词： Electrochemical sensing,Gallium nitride,Photodeposition,Glucose detection,Palladium nanoparticles,Porous materials
更新于2025-09-23 15:22:29
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Half-metallic ferromagnetic behavior in (Ga, Cr)N and (Ga, Cr, V)N compounds for spintronic technologies: Ab-initio and Monte Carlo methods
摘要： In this article, we investigate the magnetic- and electronic-proprieties of GaN doped with simple- and double-impurities utilizing Ab-initio and Monte Carlo studies. We have predicted that (Ga, Cr)N and (Ga, Cr, V)N compounds exhibit ferromagnetic- and halfmetallic-behavior with 100% spin-polarization at the Fermi-level. Moreover, we have found that Ga1-xCrxN and Ga1-2xCrxVxN (x = 0.04, 0.05 and 0.06) show a 2nd order ferromagnetic transition and that their Tc is above room temperature. These predictions make (Ga, Cr)N and (Ga, Cr, V)N compounds strong-candidates for spintronic-technologies.
关键词： Ab-initio calculations,Monte Carlo method,Diluted magnetic semiconductors,Spintronic,Gallium Nitride
更新于2025-09-23 15:22:29