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Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding
摘要： Hard X-ray photoelectron spectroscopy measurements are performed on ≈10-nm-thick GaAs film/Si substrate junctions fabricated by the surface activated bonding and selective wet etching. The chemical shifts of Ga-O and As-O signals in Ga 2p3/2 and As 2p3/2 core spectra indicate that oxides are formed in a part of GaAs films neighboring GaAs/Si interfaces due to the surface activation process. Analyses of Ga-O and As-O signals show that the thickness of such buried oxides is decreased due to a post-bonding annealing at temperatures up to 400 °C. This means that the electrical properties of bonding interfaces, which are in the meta-stable states, are improved by the annealing. The thickness of oxides is different from that of amorphous-like transition layers at the GaAs/Si interfaces observed by transmission electron microscopy.
关键词： Buried interface,Surface activated bonding,GaAs/Si,HAXPES
更新于2025-09-23 15:23:52
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<i>Operando</i> diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
摘要： The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.
关键词： resistive switching,HfO2,HAXPES,RRAM,interface
更新于2025-09-23 15:22:29
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Fabrication of a Bilayer Structure of Cu and Polyimide to Realize Circuit Microminiaturization and High Interfacial Adhesion in Flexible Electronic Devices
摘要： With commercialization of the 5th generation mobile communication system and the further spread of the Internet of Things, industrial innovation is arriving with new business fields related to concepts such as high-speed communication, self-driving vehicles, and remote medicine. One of the challenges is the realization of flexible devices with high-definition circuits, which requires new fabrication techniques for Cu films on polymer substrates to meet demands and an understanding of the Cu/polymer interfacial nanostructure to assure product quality. We have developed a promising technique for the fabrication of Cu film on polyimide (PI), which consists mainly of very simple semiconductor device processes. This technique allows for control of the Cu thickness with nanometer precision to form miniaturized Cu circuits with potential advantages in terms of interfacial adhesion and material/production costs. The Cu/PI interfaces fabricated by conventional vapor deposition and the new technique are systematically analyzed using synchrotron hard-X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy (STEM), and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). With conventional vapor deposition, it was discovered that evaporated Cu atoms decompose the PI and an oxidation layer with a thickness of several nanometers that deteriorates the interfacial adhesion could be visualized at the Cu/PI interface. With the new technique, the decomposition of PI and interfacial oxidation are significantly suppressed. Furthermore, the proposed technique can be broadly applied to the investigation of metal/polymer interfaces fabricated by polymer coating on a metal substrate, which has so far been impossible.
关键词： STEM,TOF-SIMS,Flexible printed circuits,Microminiaturization,Interfacial adhesion,HAXPES,Flexible electronics
更新于2025-09-10 09:29:36