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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology
摘要： We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by common-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >7.4dB at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm ╳0.9 mm.
关键词： thin-film microstrip (TFM),Indium phosphide (InP),H-band,Amplifier,Heterojunction bipolar transistors (HBTs),Terahertz monolithic integrated circuit (TMIC)
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - San Diego, CA, USA (2018.10.15-2018.10.17)] 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - A 1–20 GHz Distributed, Stacked SiGe Power Amplifier
摘要： This paper presents a wideband distributed power ampli?er that operates from 1-20 GHz. The peak output power is 19.5 dBm, with a peak PAE of 28% at 1 GHz. The power ampli?er utilizes a distributed ampli?er topology with arti?cial transmission lines, as well as transistor stacking, to achieve high output power and wide bandwidth. For the ampli?er core power cells, a stack-up of four SiGe HBTs was used to distribute the maximum voltage swing across the ampli?er. This power ampli?er, designed in a 90 nm SiGe BiCMOS platform, occupies an area of 1.95×1.3mm2.
关键词： wideband,SiGe HBTs,PAE,distributed power ampli?er,transistor stacking
更新于2025-09-23 15:19:57
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A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels
摘要： This paper presents a uni?ed physical formulation for the avalanche effect in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at different injection levels. Based on an analytical description of the resulting electric-?eld distribution, a closed-form analytical expression for the multiplication factor is derived and has been implemented in the HICUM compact model. The model accuracy close to and beyond the common-emitter breakdown voltage BVCEO has been assessed over a wide temperature range in comparison to measurements of SiGe HBTs with different collector doping pro?les and emitter geometries.
关键词： safe operating area (SOA),high injection,silicon-germanium heterojunction bipolar transistors (SiGe HBTs),compact model,impact ionization,Avalanche,kirk effect
更新于2025-09-10 09:29:36
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In <sub/>0.49</sub> Ga <sub/>0.51</sub> P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
摘要： We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ～100 through optimizing the base doping concentration (C-doped, ～ 1.9×1019/cm3), base layer thickness (～55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BV ceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform.
关键词： InGaP/GaAs heterojunction bipolar transistors,base doping concentrations,base thickness,Si substrates,HBTs,sub-collector doping concentrations
更新于2025-09-04 15:30:14