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Homogeneous Anodic TiO <sub/>2</sub> Nanotube Layers on Ti–6Al–4V Alloy with Improved Adhesion Strength and Corrosion Resistance
摘要： Hexagonal TiO2 nanotubes (TNTs) arrays are generally fabricated on Ti-based substrates for some biomedical purposes, but the TNT layers constructed on conventionally processed Ti alloys are usually inhomogeneous because the substrates typically contain both the α and β phases. In this work, high-pressure torsion (HPT) is applied to obtain a saturated single α-phase microstructure in Ti–6Al–4V alloys via strain-induced β phase dissolution. Homogeneous anodic TNT layers with three different morphologies, one-step nanoporous, one-step nanotubular, and two-step nanoporous structures, are electrochemically fabricated on the ultrafine-grained (UFG) Ti–6Al–4V alloy substrates after HPT processing, whereas the TNT layers prepared on coarse-grained substrates are normally inhomogeneous. More notably, the TNT layers show significantly improved adhesion strength to the UFG substrate as well as better corrosion resistance compared to those on the conventionally processed Ti–6Al–4V substrates. X-ray diffraction analysis, scanning electron microscopy in combination with electron backscatter diffraction, and transmission electron microscopy indicate that the improvement is due to a larger dislocation density in the UFG substrate as well as strain-induced β phase dissolution.
关键词： high-pressure torsion,homogeneity,TiO2 nanotubes,adhesion strength,strain-induced phase transformation
更新于2025-11-21 11:03:13
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Development of a high temperature diamond anvil cell for x ray absorption experiments under extreme conditions
摘要： X-ray absorption spectroscopy (XAS) is presently a powerful and established tool to investigate solid and liquid matter at high pressure and high temperature (HP-HT). HP-HT XAS experiments rely on high pressure technology whose continuous development has extended the achievable range up to 100 GPa and more. In high pressure devices, high temperature conditions are typically obtained by using internal and external resistive heaters or by laser heating. We have recently developed a novel design for an internally heated diamond anvil cell (DAC) allowing XAS measurements under controlled high temperature conditions (tested up to about 1300 K). The sample in the new device can be rapidly heated or cooled (seconds or less) so the cell is suitable for studying melting/crystallization dynamics when coupled with a time-resolved XAS setup (second and sub-second ranges). Here we describe the internally heated DAC device which has been realized and tested in experiments on pure selenium at the energy dispersive ODE beamline of Synchrotron SOLEIL. We also present results obtained in XAS experiments of elemental Se using a large volume Paris-Edinburgh press, as an example of the relevance of structural studies of matter under extreme conditions.
关键词： high pressure,high temperature,DAC,Selenium,XAS
更新于2025-09-23 15:23:52
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Equation of state and structural characterization of Cu <sub/>4</sub> I <sub/>4</sub> {PPh <sub/>2</sub> (CH <sub/>2</sub> CH?=?CH <sub/>2</sub> )} <sub/>4</sub> under pressure
摘要： Combined high pressure single crystal X-ray diffraction experiments and ab initio simulations based on the density functional theory have been performed on a copper(I) iodide cluster formulated [Cu4I4{PPh2(CH2CH = CH2)}4] under high pressure up to 5 GPa. An exhaustive study of compressibility has been done by means of determination of isothermal equations of state and structural changes with pressure at 298 K taking advantage of the single crystal is more precise than powder X-ray diffraction for this type of experiments. It allows us to report the evidence of the existence of an isostructural phase transition of second order at 2.3 GPa not detected so far.
关键词： Copper iodide,high pressure,equation of state,phase transition
更新于2025-09-23 15:23:52
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The Structure of Phase-Change Chalcogenides and Their High-Pressure Behavior
摘要： Phase-change materials (PCMs) used in data storage devices have unique structural features and transition properties by thermal heating. Pressure, as another important thermodynamic tool, can also induce a series of interesting phase transitions in PCMs, accompanied by the altering of bonding nature and physical properties. Here, the structure transition as well as property change of prototypical phase-change material Ge–Sb–Te (GST) under hydrostatic pressure has been reviewed. The high-pressure behavior of some other relevant chalcogenides such as GeTe, Sb2Te3, and GeSe, is also discussed. The revealing of structure and property changes due to high pressure sheds light on the underlying physics of many fascinating properties of PCMs, and therefore it will have profound implications on various applications of phase change materials in memory and other fields.
关键词： high pressure,phase-change materials,Ge–Sb–Te,memory materials
更新于2025-09-23 15:23:52
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Electron microscopic observation of photoreceptor cells in directly inserted anesthetized <i>Drosophila</i> into a high-pressure freezing unit
摘要： The high-pressure freezing (HPF) technique is known to cryofix water-containing materials with little ice-crystal formation in deep depths compared with other freezing techniques. In this study, HPF for anesthetized living Drosophila was performed by placing them directly on the carrier of the HPF unit and exposing them to light. Frozen Drosophila were freeze substituted, and their compound eyes were examined by transmission electron microscopy. The ultrastructures of ommatidia composed of photoreceptor cells were well preserved. The location of the cytoplasmic organelles inside the photoreceptor cells was observed. In some photoreceptor cells in ommatidia of the light-exposed Drosphila, the cytoplasmic small granules were localized nearer the base of rhabdomeres, compared with those of the nonlight-exposed Drosophila. Thus, HPF with the direct insertion of living Drosophila under light exposure into the HPF machine enabled us to examine changes to functional structures of photoreceptor cells that occur within seconds.
关键词： photoreceptor cell,high-pressure freezing,Drosophila
更新于2025-09-23 15:23:52
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European Microscopy Congress 2016: Proceedings || Graphite-to-diamond (13C) direct transition in a diamond anvil high-pressure cell
摘要： As the hardest material in nature, diamond is of great importance and interest for scientific studies. However, formation of a diamond is complicated process and requires extreme conditions. Bundy and Kasper (1967) for the first time synthesized a new form of carbon—hexagonal diamond – under conditions of static pressure exceeding about 13 GPa and temperature greater than about 1000°C [1]. At room temperature the crystal structure of graphite is stable up to pressure 15 GPa and loses some of the graphite features at higher pressure, forming metastable graphitic or amorphous phases [2]. Transition of polycrystalline graphite to diamond occurs after hydrostatic pressure treatment near 70 GPa [3]. The development of solid-state phase transitions, including those at the stage of nucleation and development of a new phase practically always is connected with the relaxation of elastic stress [4], and in case of graphite-diamond transformation the latter can play main role. The goal of the present work is the formation of diamond from graphite in direct phase transition in a diamond anvil high-pressure cell, where the relaxation of elastic stress can be realized by means of plastic deformation of the sample. The experiment was performed at room temperature without a catalyst.13С was subjected to the shear deformation under pressure of 25 GPa. The structure studies of the obtained material were made by transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). In order to prevent the confusion of the diamond obtained in the experiment with one of the diamond anvils we used graphite composed of 13C carbon isotope atoms as a precursor. The diamond anvils consisted of conventional 12C diamond. Before TEM examination of each sample a Raman spectroscopy was used to verify that it contains only 13 C (diamond) and no 12C. TEM and EELS were carried out using JEOL JEM-2010 high-resolution transmission electron microscope. TEM analysis has shown that the samples obtained in the series of our experiments contain several phases of carbon simultaneously. After the high pressure treatment in shear diamond anvil cell (SDAC) there were observed some fragments of the sample, which contained both hexagonal and rhombohedral graphite (significant amounts of the last one), and also diamond and lonsdaleite. Fig. 1 shows the fragment, where the rhombohedral graphite presents. Fig. 2a shows the diamond structure fragment with {111}-planes composing 70o. Interplanar distances are 0.206 nm. Fig. 2b shows the EELS-spectrum which can be unambiguously attributed to a diamond. Thus, it was shown that 13С-graphite directly transforms into 13С-diamond (at least particularly) without a catalyst at room temperature after treatment in SDAC under pressure of 25 GPa.
关键词： EELS,high pressure,shear diamond anvil cell,HRTEM
更新于2025-09-23 15:23:52
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Shock synthesis of Sr2Si5N8:Eu2+ phosphor
摘要： A new approach to synthesise the red-emitting nitridosilicate phosphor Sr2Si5N8:Eu2+ using shock waves is described. The solid state reaction of a mixture of Si3N4, Sr3N2 and EuN was induced using a detonation-driven shock wave apparatus. The obtained products consist of Sr2Si5N8:Eu2+ with a purity of 80–89 %, containing 7–9 % of SrSi7N10 and 4–11 % α-Si3N4, according to Rietveld analyses. Crystallites with sizes of 240–310 nm are formed, yielding particles of 2–3 μm grain size. The luminescence properties are similar to conventionally produced Sr2Si5N8:Eu2+ phosphors.
关键词： High-pressure,Phosphors,Luminescence,Solid state reaction
更新于2025-09-23 15:23:52
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An exploration of surface enhanced Raman spectroscopy (SERS) for in situ detection of sulfite under high pressure
摘要： In this work, silver nanoparticles film was directly fabricated on the surface of the diamond anvil as SERS active substrate for the first time by using a simple and convenient method. With this approach, the SERS spectrum of sulfite was obtained with a detection limit of 5 μmol/L in diamond anvil cell (DAC) at ～50 MPa. The SERS signal intensity of the two main vibration modes, νsymSeO and δsymOeSeO, showed good linearity with the Na2SO3 concentrations in the range from 5 to 40 μmol/L under high pressure. The linear correlation coefficients were 97.67% and 96.08%, respectively. The effects of pressure on the SERS intensity and Raman shift of the two modes were also studied. The SERS intensity dropped with the increase of pressure and the two main vibration modes shifted to high wave-number when the pressure increased in the pressures ranging from 54 MPa to 330 MPa. The experiments indicate that this method is rapid, convenient and sensitive in detecting sulfite at high pressures. It can be developed as an effect in situ method to detect sulfite in the process of high pressure reaction.
关键词： SERS,In situ,High pressure,Diamond-anvil cell,Sulfite
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - Bangalore (2018.3.16-2018.3.17)] 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric
摘要： AlInN/GaN metal insulator semiconductor high electron mobility transistor (MIS-HEMT) with high pressure oxidized aluminium as gate dielectric is investigated in this paper. The fabricated MIS-HEMT shows more than six orders of reduction in the gate leakage current in reverse bias and more than three orders of reduction in forward bias compared to the reference HEMT devices also fabricated on same substrates. A maximum drain current of 750 mA/mm was achieved due to improvement in the gate swing for MIS-HEMT. The MIS-HEMT devices also showed good improvement in the subthreshold slope and ID,ON/ID,OFF ratio compared to HEMT devices.
关键词： gate leakage current,MIS-HEMT,high pressure oxidation,AlInN/GaN,HEMT,Al2O3
更新于2025-09-23 15:23:52
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Compact integrated magnetometer based on nitrogen-vacancy centres in diamond
摘要： We demonstrate an integrated and miniaturised magnetic field sensor based on the negatively charged nitrogen-vacancy centres (NV-) in diamond. The compact device includes all optical components, both for the optical excitation path and for the detection of the emitted fluorescence signal. We experimentally verify that it enables optically detected magnetic resonance (ODMR) measurements and we specify noise and sensitivity of the magnetometer. The minimal detectable magnetic field of the device is ≈ 1 μT for a given integration time of 1 ms, which is approximately one order of magnitude larger than its photon shot-noise limit. It has the significant advantage over traditional setups using NV- centres (including a laser and a complex optical system) that the specific construction volume is about 2.9 cm3 with a total power consumption of ≈ 1.5 W, which enables the device for a wide range of industrial sensing applications.
关键词： synthetic diamond,defects,optical properties,high pressure high temperature (HPHT),sensors
更新于2025-09-23 15:22:29