研究目的
To investigate the performance of AlInN/GaN MIS-HEMTs with high pressure oxidized aluminium as gate dielectric, focusing on reducing gate leakage current and improving device characteristics compared to reference HEMTs.
研究成果
The HPO-Al2O3 gate dielectric significantly reduces gate leakage current by over six orders in reverse bias and three orders in forward bias, improves gate swing enabling a maximum drain current of 750 mA/mm, enhances subthreshold slope to 105 mV/decade, and increases ID,ON/ID,OFF ratio by seven orders compared to HEMTs. This makes HPO-Al2O3 a promising dielectric for GaN-based devices, with performance comparable or superior to other Al2O3 deposition techniques.
研究不足
The paper does not explicitly discuss limitations, but potential areas include the specific conditions of high pressure oxidation (e.g., temperature, pressure, time) that may not be optimized for all applications, and the comparison is limited to Al2O3 dielectrics from other methods without extensive reliability or long-term testing.
1：Experimental Design and Method Selection:
The study involves fabricating and characterizing MIS-HEMTs with high pressure oxidized Al2O3 as gate dielectric, comparing them with reference HEMTs. Theoretical models for device performance are implied but not detailed.
2：Sample Selection and Data Sources:
Lattice-matched GaN/Al0.83In0.17N/AlN/GaN wafers grown by MOCVD on c-plane sapphire substrates from Novagan, Switzerland, were used.
3：83In17N/AlN/GaN wafers grown by MOCVD on c-plane sapphire substrates from Novagan, Switzerland, were used.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes Oxford Instrument's ICPRIE system, Annealsys RTP system, e-beam evaporator, high pressure oxidation chamber, Agilent B1500 semiconductor parameter analyzer, and Cascade Microtech Summit probe station. Materials include Ti/Al/Ni/Au for ohmic contacts, Ni/Au for gate metal, Al for oxidation, BCl3/Cl2 gas, HCl, O2 gas, and buffered hydrofluoric acid.
4：Experimental Procedures and Operational Workflow:
Steps include cleaning, mesa isolation using ICPRIE, ohmic contact deposition and annealing, Al deposition and high pressure oxidation at 500°C for 15 min with 3 atm O2, gate metallization, etching of Al2O3 in contact pads, pad metallization, and annealing in N2 and forming gas. HEMTs were fabricated similarly without Al deposition and oxidation.
5：Data Analysis Methods:
Electrical characterizations were performed using Agilent B1500 analyzer, with parameters like gate leakage current, drain current, transconductance, threshold voltage, subthreshold slope, and ID,ON/ID,OFF ratio extracted from measurements.
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