- 标题
- 摘要
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- 实验方案
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P-1.11: A Compact Model of Current and Capacitance for Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
摘要： In recent years, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have shown outstanding performance in flexible circuit applications, active matrix display and so on. Therefore, they will play an increasingly important role in the future of electronic applications. At the same time, an analytical model that predicts the electrical characteristics of IGZO TFTs is also critical. In this paper, we present a current and capacitance compact model of a-IGZO TFTs. The compact model can be applied to different channel lengths for a-IGZO TFTs. Besides, it is capable of capturing device characteristics and of maintaining high computational efficiency. Its accuracy is validated through the extensive comparisons between model results and experimental data.
关键词： degenerate mechanism,AC model,Amorphous IGZO thin-film transistors,DC model
更新于2025-09-04 15:30:14
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Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors
摘要： We investigated how the zero-voltage duration (0Vd) affects the tendency of degradation during pulsed gate bias stress in a-InGaZnO thin film transistors (TFTs). DC or pulsed negative bias illumination stress (NBIS) or positive bias stress (PBS) was applied to the TFTs for effective stress time of 4,000 s. While pulsed bias stress was being applied, stress-voltage duration (SVd) was set as either 10 s or 1 s per cycle, and 0Vd was varied from 100% to 1% of the SVd. During NBIS, degradation in both threshold voltage and sub-threshold slope became increasingly severe as 0Vd was shortened. However, during pulsed PBS, these trends were almost absent. These different tendencies may occur because the cause of each stress-induced degradation is fundamentally dissimilar; NBIS involves ionization of oxygen vacancies, whereas PBS involves electron trapping. The proposed mechanism was supported by additional bias stress tests on TFTs that had been immersed in H2O, where hydrogen became dominant factor causing the degradation.
关键词： Hydrogen,IGZO,Dynamic stress,Instability,Oxygen vacancy,AC stress
更新于2025-09-04 15:30:14
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The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors
摘要： Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, ?exible, transmission, and uniformity. The thin ?lm transistors (TFTs) with a-IGZO thin ?lm as active layer perform higher ?eld-effect mobility (>10 cm2/V · S), larger I on/I off ratio (>106), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.
关键词： Microwave Annealing,Stretched-Exponential Model,IGZO TFTs,Positive Bias Stress
更新于2025-09-04 15:30:14
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P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors
摘要： With the progress of technology, to reduce the load of display panels, some researchers have been carried out to investigate the effects of source/drain electrodes on the performance of a-IGZO based TFTs. In this paper, indium gallium zinc oxide (IGZO) is chosen as the active layer material, and we use four different types of source/drain materials including indium-tin-oxide (ITO), Al, Al-doped zinc oxide (AZO) and Ga-doped zinc oxide (GZO) to explore the influence of different source/drain materials on the characteristics of oxide semiconductor thin film transistors (TFT). The results show that TFTs with AZO as source/drain electrodes exhibit good characteristics. After 200℃ annealing, the output characteristic of TFT with AZO as source/drain electrodes becomes better and its source/drain series resistance is low. From this study, AZO can be considered as a hopeful source/drain material which would be utilized in the future displays technology.
关键词： AZO,thin film transistors,IGZO,oxide semiconductor,source/drain material
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Development of Memristor Characteristic Device Using In-Ga-Zn-O Thin Film
摘要： In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by physical vapor deposition (PVD). The Al/IGZO/Al cell device showed the bipolar switching characteristic of a switching voltage 2 and reproducibility 10.
关键词： memristor characteristic,IGZO,amorphous oxide semiconductors,Al
更新于2025-09-04 15:30:14
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P-6.6: Fabrication of Cu BCE-structure IGZO TFTs for 85-inch 8K4K 120Hz GOA LCD Display
摘要： The electrical characteristics of the back-channel-etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a-IGZO) (TFTs) were studied. The passivation layer ,the selection of color filter material and design of GOA TFT structure were modified for lessening the influence of H2O molecules adsorbing on the back channel of the BCE-structure. The negative and positive bias temperature stress results revealed that the optimized GOA TFTs exhibited good device reliability. Finally, a high performance 85-inch 8K4K 120Hz GOA LCD was demonstrated.
关键词： GOA,BCE a-IGZO TFT,8K4K,85-inch
更新于2025-09-04 15:30:14