研究目的
To develop a memristor characteristic device using an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film.
研究成果
The Al/IGZO/Al cell device showed the bipolar switching characteristic of a switching voltage 2 and reproducibility 10 cycle. These devices are considered to be available for a non-volatile memory.
研究不足
At the flow ratio of 20/4, the memristor characteristics could be observed only once due to the increased amount of oxygen ions, which made it impossible to move smoothly.
1：Experimental Design and Method Selection:
The memristor characteristic device was fabricated using IGZO for the active layer and aluminum for the electrodes by physical vapor deposition (PVD). The Al/IGZO/Al cell device was tested for bipolar switching characteristics.
2：Sample Selection and Data Sources:
The samples were fabricated with bottom electrode Al layers (50nm), an amorphous IGZO thin film layer (30 nm), and top electrode Al layers (50 nm).
3：List of Experimental Equipment and Materials:
Vacuum evaporation for Al layers, radio frequency magnetron sputtering for IGZO thin film, with a 2-inch cermic target (In : Ga :Zn=1 : 1 :1).
4：1).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Sweeping voltage (?3.5 V to 3.5 V) was applied to a top electrode (V1) and another electrode was grounded to measure the I-V characteristic.
5：5 V to 5 V) was applied to a top electrode (V1) and another electrode was grounded to measure the I-V characteristic.
Data Analysis Methods:
5. Data Analysis Methods: The I-V characteristic curves were analyzed to observe the switching characteristics from HRS to LRS.
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