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Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
摘要： Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.
关键词： field-effect transistor (FET),inverter,WSe2,InGaZnO (IGZO),heterojunction PN diode,AC rectifier
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2019.11.14-2019.11.15)] 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - High reliability InGaZnO TFT by inductively coupled plasma sputtering system
摘要： The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems, we have developed inductively coupled plasma sputtering equipment that can control the Radio Frequency (RF) power to generate Inductively Coupled Plasma (ICP) and the voltage applied to the sputtering target independently. Using this equipment, we can deposit high-density oxide semiconductor films at room temperature and fabricate highly reliable TFTs with them.
关键词： thin-film transistor(TFT),inductively coupled plasma (ICP) sputtering,InGaZnO (IGZO),reliability
更新于2025-09-16 10:30:52