研究目的
To solve the problems of reliability and high process temperature in oxide semiconductor TFTs by developing an inductively coupled plasma sputtering system that can deposit high-density oxide semiconductor films at room temperature.
研究成果
The ICP sputtering system developed can deposit high-density IGZO films at room temperature, enabling the fabrication of highly reliable TFTs. Reliability was significantly improved by using a layered structure for the IGZO films. The system shows potential for fabricating high-reliability IGZO TFTs through a low-temperature process.
研究不足
The need for high-temperature annealing for some passivation films limits the applicability for low-temperature processes. The study suggests that finding a high-quality passivation film that can be coated at lower temperatures could enable highly reliable TFTs in a low-temperature process.
