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Laser additive manufacturing of TA15 - Inconel 718 bimetallic structure via Nb/Cu multi-interlayer
摘要： High quality fabricating of the bimetallic structure of TA15 and Inconel 718 (IN718) is widely used in the aerospace ?led. In this study, we have used laser additive manufacturing (LAM) technology to fabricate the bimetallic structure and to prevent the formation of brittle phases via Nb/Cu multi-interlayer. The results of this study showed that Nb/Cu multi-interlayer was very e?ective in preventing the generation of brittle Ti–Ni and Ti–Cu phases. The good metallurgical bonds were presented at these interfaces between TA15 and IN718. Mechanical properties of the bimetallic structure revealed that the tensile strength reached that of the weakest metal, Cu.
关键词： Tensile strength,Microstructure,Laser additive manufacturing,Interfaces,Interlayer
更新于2025-09-12 10:27:22
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Highly Efficient and Bright Inverted Top‐Emitting InP Quantum Dot Light‐Emitting Diodes Introducing a Hole‐Suppressing Interlayer
摘要： InP quantum dots (QDs) based light-emitting diodes (QLEDs) are considered as one of the most promising candidates as a substitute for the environmentally toxic Cd-based QLEDs for future displays. However, the device architecture of InP QLEDs is almost the same as the Cd-based QLEDs even though the properties of Cd-based and InP-based QDs are quite different in their energy levels and shapes. Thus, it is highly required to develop a proper device structure for InP-based QLEDs to improve the efficiency and stability. In this work, efficient, bright, and stable InP/ZnSeS QLEDs based on an inverted top emission QLED (ITQLED) structure by newly introducing a “hole-suppressing interlayer” are demonstrated. The green-emitting ITQLEDs with the hole-suppressing interlayer exhibit a maximum current efficiency of 15.1–21.6 cd A?1 and the maximum luminance of 17 400–38 800 cd m?2, which outperform the recently reported InP-based QLEDs. The operational lifetime is also increased when the hole-suppressing interlayer is adopted. These superb QLED performances originate not only from the enhanced light-outcoupling by the top emission structure but also from the improved electron–hole balance by introducing a hole-suppressing interlayer which can control the hole injection into QDs.
关键词： indium phosphide,top emitting structure,efficiency,quantum dot–based light emitting diodes (QLEDs),hole suppressing interlayer
更新于2025-09-12 10:27:22
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InGaN based tunable green light-emitting diodes using InAlN interlayer and strain compensated AlGaN interlayer for better device performance
摘要： The effect of employing an InyAl1?yN and AlyGa1?yN interlayer (IL) in the InxGa1?xN/GaN active region for the green light-emitting diodes (LEDs) has been studied. The high compressive strain in InxGa1?xN/GaN QW is compensated by the tensile strained AlyGa1?yN IL. The InyAl1?yN IL reduces the strain between InxGa1?xN and GaN layers. The AlyGa1?yN or the InyAl1?yN layer in between the QW and the GaN barriers increase the barrier height, which potentially suppresses the electron and hole leakage from the QW. These increase the square of the overlap of electron and hole wave functions (M )eh of the QW LEDs. By changing the well width and aluminum or indium content in the IL, we obtained better optical properties. It has found that 10 ? thick In0.2Al0.8N and 10 ? thick Al0.8Ga0.2N layers give the maximum Meh for the green LEDs, using InyAl1?yN and AlyGa1?yN ILs. Furthermore, we have compared the Meh, using AlyGa1?yN and InyAl1?yN IL with the current. The best result is obtained for the 10 ? Al0.8Ga0.2N IL, which increases the Meh up to 2 times, as compared to the QW LEDs, without any IL.
关键词： AlyGa1?yN interlayer,InxGa1?xN QW LED,InyAl1?yN interlayer,Transition energy
更新于2025-09-11 14:15:04
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Interface Microstructure and Nanoindentation Characterization of Laser Offset Welded 5052 Aluminum to Press-Hardened Steel Using a Brass Interlayer
摘要： Laser o?set welding of 5052 aluminum to press-hardened steel using a brass interlayer was carried out. The cross-sectioned macrostructure and tensile strength were governed by varying the thickness of the brass interlayer. The maximum tensile strength reached 56.4 MPa when the thickness of brass interlayer was 0.05 mm. Subsequently, the interface microstructure, the nanoindentation characterization, and the fracture behavior were evaluated experimentally by means of scanning electron microscopy (SEM), energy-dispersive X-ray spectrometer (EDS), and micro-X-ray di?raction (micro-XRD), respectively. It was found that the intermetallic compound (IMC) layer at the interface consisted of an Fe2Al5 layer and an FeAl layer, and the estimated nanohardness of Fe2Al5, FeAl, and Fe3Al were 16.11 GPa, 9.48 GPa, and 4.13 GPa, respectively. The fracture of the joint with the 0.05 mm brass interlayer was a mixture of cleavage fracture and intergranular fracture, while that of the joint with the 0.1 mm brass interlayer exhibited the characterization of a major dendrite arm, leaving a metallurgical connected zone consisting of the Al2Cu and the α-Al phase.
关键词： laser o?set welding,aluminum,press-hardened steel,brass interlayer,nanoindentation,interface microstructure
更新于2025-09-11 14:15:04
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Interfacial Modification and Defect Passivation by Crosslinking Interlayer for Efficient and Stable CuSCN-Based Perovskite Solar Cell
摘要： Study of the inorganic hole-transport layer (HTL) in perovskite solar cell (PSC) is gathering attention due to the drawback of conventional PSC design, where the organic HTL with salt dopants majorly participates in the degradation mechanisms. On the other hand, inorganic HTL secures better stability, while it offers difficulties in the deposition and interfacial control to realize high-performing devices. In this study, we demonstrate polydimethylsiloxane (PDMS) as an ideal polymeric interlayer which prevents the interfacial degradation, and improves both photovoltaic performance and stability of CuSCN-based PSC by its crosslinking behavior. Surprisingly, the PDMS polymers are identified to form chemical bonds with perovskite and CuSCN, as shown by Raman spectroscopy. This novel crosslinking interlayer of PDMS enhances the hole-transporting property at the interface and passivates the interfacial defects, realizing the PSC with high power-conversion efficiency over 19%. Furthermore, the utilization of PDMS interlayer greatly improves the stability of solar cells against both humidity and heat, by mitigating the interfacial defects and interdiffusion. The PDMS-interlayered PSCs retained over 90% of the initial efficiencies, both after 1000 h under ambient condition (unencapsulated) and after 500 h under 85°C/85% relative humidity (encapsulated).
关键词： Crosslinking Interlayer,Inorganic Hole-Transport Layer,Defect Passivation,Stability,Perovskite Solar Cell
更新于2025-09-11 14:15:04
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Enhanced superconducting properties of a YGBCO/Gd-CeO2/YGBCO tri-layer film deposited by pulsed laser deposition
摘要： To evaluate the inhibition of the REBa2Cu3O7-δ (REBCO, where RE is rare earth) film thickness effect, a series of Y0.5Gd0.5Ba2Cu3O7-δ(YGBCO)/interlayer/YGBCO tri-layer films with Gd-Cerium oxide (CeO2) film were prepared under different experimental conditions in this study. The results illustrate that the electric current from the top YGBCO layer could transmit to the bottom YGBCO layer by adding Gd into the CeO2 interlayer with the approximate thicknesses limits of 10 nm. For further increase the electric current carrying capacity, a series of YGBCO/Gd-CeO2/YGBCO tri-layers were fabricated under different oxygen partial pressures and laser energies. The better crystallinity, and texture, and the smoother surface levels completely eliminated the thickness effect. However, the samples’ superconductivity declined sharply at low laser energies. Because the Gd particles deposited on the substrate were fully oxidized, this led to particle disappearance in the interlayer film. Additionally, YGBCO samples with a Gd-CeO2 interlayer were more likely to be damaged than a pure YGBCO sample in the measurement process, which could be solved by increasing the Gd content in the CeO2+Gd target. Hence, by depositing a Gd-CeO2 interlayer, YGBCO tri-layer films with high superconductivity and low damageability were obtained.
关键词： Gd-CeO2 interlayer,laser energy,superconductivity,damageability,oxygen partial pressure
更新于2025-09-11 14:15:04
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First-principles investigation on the interlayer doping of SnSe2 bilayer
摘要： Using density functional theory calculations, we systematically investigated the effects of numbers and types of transition metals (TM) on the magnetic property of SnSe2 bilayer nanosheet. Our results revealed that, when one TM is introduced into the interlayer, the magnetic moment induced by the Co and Ni is tiny while it is largely strengthened with the doping of V, Cr, Mn, and Fe. When two TMs are inserted into the interlayer, Vand Cr make the system change into a weak antiferromagnetism (AFM) state while Mn-, Fe-, Co-doped systems display a weak ferromagnetism (FM) ground state. These FM states have the magnetic moments which double those of the one TM–doping systems. With the TM numbers further increasing to four, the robust AFM and FM features appear with the doping of Fe and Mn, respectively. Ni cannot induce any magnetism whatever the numbers of Ni are filling in. Interestingly, with the increase of the numbers of dopants, transitions from FM to AFM and AFM to FM are predicted to be realized on Fe-SnSe2 and Cr-SnSe2 systems, respectively. This kind of transition may be important for the applications in spintronic devices.
关键词： Interlayer doping,Spintronics application,Density functional theory,Antiferromagnetism,Modeling and simulation,Ferromagnetism,SnSe2
更新于2025-09-10 09:29:36
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Inkjet Printing of SiO2 Hollow Spheres/Polyimide Hybrid Films for Foldable Low-k ILD
摘要： We demonstrate inkjet printing as a viable method for flexible interlayer dielectrics (ILDs) films with a low dielectric constant, excellent mechanical characteristics, and thermal properties in foldable organic light emitting diodes (OLEDs). SiO2 hollow spheres (SHSs)/polyimide (PI) hybrid films were printed by SiO2 coated polystyrene (PS) ink and PI ink. The relative permittivity of the hybrid films decreased from 3.45 to 1.87. The thermally stable PI fims maintained their weight below 500 °C from the TGA result. The dielectric constant and current density retained their properties after 50,000 cycles of bending at a 1 mm bend radius. We propose that the inkjet printing of SHSs/PI hybrid films described herein is a promising approach for flexible ILDs in foldable OLEDs.
关键词： SiO2 hollow sphere,polyimide,foldable OLEDs,low-k material,inkjet printing,interlayer dielectric
更新于2025-09-10 09:29:36
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Ultrafast formation and dynamics of interlayer exciton in a large-area CVD-grown WS <sub/>2</sub> /WSe <sub/>2</sub> heterostructure
摘要： A WS2/WSe2 heterostructure is constructed by stacking a WS2 monolayer on the top of WSe2 monolayer fabricated with chemical vapor deposition (CVD) method. Ultrafast transient spectroscopy is used to demonstrate the ultrafast charge transfer and interlayer exciton dynamics in the heterostructure. When the WS2/WSe2 heterostructure was photoexcitated at 617 nm (2.01 eV) to excite the A-exciton transition of WS2, an ultrafast photobleaching was observed around the WSe2 A-exciton transition at 749 nm. The bleaching signal lasts several nanoseconds, which is much longer than the A-exciton lifetime in both the WS2 and WSe2 monolayer film. Moreover, by selectively photoexciting the A-exciton of WSe2 at 749 nm in the heterostructure, an ultrafast photobleaching occurs around the WS2 A-exciton transition, the recovery of the bleaching shows a single exponential relaxation with typical time constant of ~1.8 ps. The very fast relaxation in the heterostructure probing around 620 nm is indicative that rich defect states exist below the conduction band in WS2, which can efficiently trap these electrons transferred from the WSe2 upon photoexcitation. Our spectroscopic results reveal that our CVD-grown WS2/WSe2 bilayer film has a type II heterostructure in nature at room temperature. With photoexcitation, electrons and holes can be separately confined in the WS2 and WSe2 layer, respectively; as a result, interlayer excitons are formed.
关键词： charge transfer,interlayer exciton,type-II heterostructure,transition metal dichalcogenides,transient spectroscopy
更新于2025-09-10 09:29:36
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Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer
摘要： Hybrid phototransistors based on InGaZnO (IGZO) metal oxide thin film transistor (TFT) and photoabsorbing capping layer such as perovskite (MAPbI3) is a promising low-cost device for developing advanced X-ray and UV flat panel imager. However, it is found that the introduction of MAPbI3 inevitably damages the IGZO channel layer during fabrication, leading to deteriorated TFT characteristics such as off current rising and threshold voltage shift. Here, we report an effective approach for improving the performance of the perovskite-IGZO phototransistor by inserting a PCBM or PCBM:PMMA interlayer between the patterned MAPbI3 and the IGZO. The interlayer effectively prevents the IGZO from damaging by the perovskite fabrication process, while allowing efficient charge transfer for photo sensing. In this configuration, we have achieved a high detectivity (1.35 × 1012 Jones) perovskite-IGZO phototransistor with suppressed off-state drain current (~10 pA) in the dark. This work points out the importance of interface engineering for realizing higher performance and reliable heterogeneous phototransistors.
关键词： IGZO,interlayer,phototransistor,perovskite,photodetector
更新于2025-09-10 09:29:36