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Influence of baking temperature on relevant properties of sol-gel Ga-doped ZnO thin films annealed at low temperature
摘要： Ga-doped ZnO(GZO) transparent thin films were grown onto glass substrates by sol-gel based spin coating process. After each coating, the as-deposited film was thermally baked at different moderate temperatures ranging from 100°C to 250°C followed by calcinations at certain temperature lower than 400°C. Characterization were conducted on calcined samples using scanning electron microscope (SEM), X-ray diffraction (XRD), optical spectroscopy and Fourier transform infrared spectroscopy (FTIR). The influence of baking temperature on crucial properties including structural, morphological and optical properties of Ga-doped ZnO transparent thin films were extensively investigated. XRD patterns exhibited typical polycrystalline of hexagonal wurtzite structure of as-deposited thin films and baking temperature is considered as one of essential key parameters affecting the crucial properties of the prepared films.
关键词： Low temperature annealing,Ga-doped ZnO,Baking temperature,Spin coating
更新于2025-09-12 10:27:22
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High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes
摘要： Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0–2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 (cid:2) 10(cid:3)4 X/cm, high carrier concentration of 5.9 (cid:2) 1020/cm3, and high visible optical transmittance ((cid:4)93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.
关键词： Er-doped ZnO,transparent conducting oxides,pulsed laser deposition,thin films,organic light-emitting diodes
更新于2025-09-12 10:27:22
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AIP Conference Proceedings [AIP Publishing ADVANCES IN BASIC SCIENCE (ICABS 2019) - Bahal, India (7–9 February 2019)] ADVANCES IN BASIC SCIENCE (ICABS 2019) - Synthesis and characterization of ZnO nano-particles for solar cell application by the cost effective co-precipitation method without any surfactants
摘要： The energy problem is the most fascinating problem in this world because the way of success of every country is depending upon the development of the low cost, well-ordered and high efficiency energy source devices.There are several research groups are working to develop the devices for renewable energy sources. So we are going to focusour research on solar cells materialsforrenewable energy sources like Zinc Oxide (ZnO). This material ishighly useful for making the heterojunction solar cell as well as window layer.Other hand ZnO is used for 3rd generation/DSSC. In this direction we have synthesized zinc oxide (ZnO) nanoparticles by low cost co-precipitation method without any surfactants. The synthesized ZnO nanoparticles have done the characterizations like X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray Spectroscopy (EDS) to evaluate shape, size, reproducibility and morphology of nanoparticles.
关键词： Solar cell,Doped ZnO,Nano-particle,Zinc Oxide,DSSCs
更新于2025-09-12 10:27:22
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Improving the photoelectrical conversion efficiency of silicon solar cells using ZnO:Al/porous silicon double antireflective layers
摘要： In this work, porous silicon (PS) layers are performed on the front side of n+p wafer via electrochemical etching technique (etching times of 15 and 25 min), using isopropanol as solvent, followed by covering with Al-doped ZnO (AZO) films prepared by sol–gel spin-coating method. AZO/PS double layers are found to have incomparable photoluminescence and reflectance characteristics required for the use as antireflection. The structural, optical properties of PS, AZO and AZO/PS have been investigated. The results show that the energy bandgap of PS layer is higher than that of nonporous Si and increases slightly with increasing the etching time. X-ray diffraction shows that the prepared AZO films have nanostructure character with hexagonal structure. The optical properties of AZO films are studied in terms of measuring the transmittance and reflectance over wavelength range 200–2500 nm. Using these parameters, the absorption coefficient and refractive index of AZO films are calculated and the related parameters are estimated. AZO films deposited on PS/n+p exhibit low reflectance compared to n+p and AZO/n+p systems. The improvement of the solar cells performance due to the effect of porosity and AZO films deposition are investigated in which the solar cells parameters are evaluated and discussed.
关键词： Porous silicon,Solar cells,Antireflective layers,Photoelectrical conversion efficiency,Al-doped ZnO
更新于2025-09-12 10:27:22
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Effects of Sn Incorporation in ZnO Thin Films on Properties of Perovskite Solar Cells
摘要： Properties of electron transporting layer (ETL) play an important role on photovoltaic performances of perovskite solar cells. In this work, effects of Sn incorporation on properties of ZnO-based perovskite solar cells were investigated. Sn-doped ZnO (TZO) thin film as ETL was prepared via a sol?gel method. With 5% atom doping, TZO film coated on an indium doped tin oxide (ITO) substrate provided comparable light transmittance with that of an undoped ZnO/ITO substrate. It was also found that the optical band gap of TZO film (3.30 eV) is slightly wider than that of the ZnO one (3.28 eV). These results suggest that Sn atoms probably incorporated into the ZnO crystal during the sol-gel method. The grains size of perovskite layer coated on TZO or ZnO films also showed variation. The perovskite crystal on the TZO thin film (average 300 nm) was larger than that of the one on ZnO thin film (average 277 nm). The preliminary results indicate that the perovskite solar cell based on TZO film provided higher power conversion efficiency (PCE) of 4.42 % than the ZnO-based device (3.16%). Short-circuit current density (Jsc), open-circuit voltage (Voc) and fill factor (FF) of TZO-based device were also higher than the ZnO-based device. This may be because TZO film may provide lower resistivity and better ETL/perovskite interface contact, confirmed by lower series resistance and higher shunt resistance of the TZO-based device. Finally, this work introduced a simple method to prepare TZO film at low temperature for photovoltaic application. It may help guide the development of flexible solar cells and other optoelectronic devices.
关键词： perovskite solar cells,electron transporting layer,photovoltaic performance,sol-gel method,Sn-doped ZnO
更新于2025-09-12 10:27:22
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Highly-Conductive, Transparent Ga-Doped ZnO Nanoneedles for Improving the Efficiencies of GaN Light-Emitting Diode and Si Solar Cell
摘要： The growths of transparent, highly-conductive Ga-doped ZnO (GaZnO) nanoneedles (NNs) on the tops of GaN-based light-emitting diodes (LEDs) and Si solar cells for enhancing light extraction and reducing surface reflection, respectively, and hence increasing their efficiencies are demonstrated. The GaZnO NNs are grown based on the vapor-liquid-solid process by using surface Ag nanoparticles (NPs) as growth catalyst. In the application to LED, the residual Ag NPs can induce the surface plasmon (SP) coupling effect for increasing the LED emission efficiency. By combining the SP coupling effect, the light extraction effects of the GaZnO NNs and simultaneously deposited GaZnO thin film, and the current spreading effect of the thin film, the LED output intensity can be increased by 100%. In the solar cell application, the SP resonance of the residual Ag NPs can also enhance sunlight harvest and hence the energy conversion efficiency. By combining the effects of the residual Ag NPs, the GaZnO thin film, and the GaZnO NNs, the energy conversion efficiency of a Si solar cell can increase from 9.65 to 12.30%, corresponding to a relative enhancement of 27.5%.
关键词： Ga-doped ZnO,light extraction,light-emitting diodes,solar cells,surface plasmon,anti-reflection,nanoneedles
更新于2025-09-11 14:15:04
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First-principle calculation of the electronic structures and optical properties of the metallic and nonmetallic elements-doped ZnO on the basis of photocatalysis
摘要： In the present paper, the electronic structure and the optical properties of metallic and nonmetallic elements-doped ZnO were investigated based on the principle of photocatalysis by first-principle density functional theory. Element doping shortens the band gap of ZnO. Due to the p-type characteristics, Fe, Cu, B and N doping brings impurity states over the Fermi level of ZnO, resulting in the shortening of the band gap, extending the absorption and utilization of solar light and thus enhancing the photocatalytic properties of ZnO. However, no impurity states appear in the band gap of Cd- and S-doped ZnO due to the intrinsic doping of Cd and S. Further investigations indicate that different doping atoms can indeed alter the near-Fermi level density of states (DOS) of ZnO and their electronic structures via substitution of zinc and oxygen atoms. In addition, the optical properties of ZnO are improved after doped with different atoms by comparing with those of pure ZnO. Due to the difference of their outer shell electrons of the doped atoms, the optical absorption properties of the investigated materials are followed as the following order: Fe-/B-doped ZnO>Cu-/N-doped ZnO>Cd-/S-doped ZnO>pure ZnO.
关键词： Doped ZnO,Density functional theory (DFT),Photocatalysis,First principle calculation
更新于2025-09-11 14:15:04
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Enhanced Electrochemical Stability of TiO <sub/>2</sub> -Protected, Al-doped ZnO Transparent Conducting Oxide Synthesized by Atomic Layer Deposition
摘要： Transparent, conductive coatings on porous, three-dimensional materials are often used as the current collector for photoelectrode designs in photoelectrochemical applications. These structures allow for improved light trapping and absorption in chemically-synthesized, photoactive overlayers while minimizing parasitic absorption in the current collecting layer. Atomic layer deposition (ALD) is particularly useful for fabricating transparent conducting oxides (TCOs) like Sn-doped In2O3 (ITO) and Al-doped ZnO (AZO) for structured materials because the deposition is specific to exposed surfaces. Unlike line-of-site deposition methods (evaporation, spray pyrolysis, sputtering), ALD can access the entire complex interface to make a conformal transparent conductive layer. While ITO and AZO can be grown by ALD, they are intrinsically soluble in the acidic and basic environments common for electrochemical applications like water splitting. To take advantage of the unique characteristics of ALD in these applications, is important to develop strategies for fabricating TCO layers with enhanced chemical stability. Ultra-thin coatings of stable materials can be used to protect otherwise unstable electrochemical interfaces while maintaining the desired function. Here, we describe experiments to characterize the chemical and electrochemical stability of ALD-deposited AZO TCO thin films protected by a 10nm TiO2 overlayer. The addition of a TiO2 protection layer is demonstrated to improve the chemical stability of AZO by orders of magnitude compared to unprotected, yet otherwise identically prepared AZO films. The electrochemical stability is enhanced accordingly in both acidic and basic environments. We demonstrate that TiO2-protected AZO can be used as a TCO for both the cathodic hydrogen evolution (HER) and anodic water oxidation (OER) half-reactions of electrochemical water splitting in base and for HER in acid when the appropriate electrocatalysts are added. As a result, we show that ALD can be used to synthesize a chemically stable TCO heterostructure, expanding the range of materials and electrochemical environments available for building complex photoelectrode architectures.
关键词： Water splitting,Transparent conducting oxides,Atomic layer deposition,Electrochemical stability,Al-doped ZnO,TiO2 protection layer
更新于2025-09-10 09:29:36
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Sensing of Acetone by Al-doped ZnO
摘要： The development of chemoresistive gas sensors for environmental and industrial air monitoring as well as medical breath analysis is investigated. Flame-made ZnO nanoparticles (NPs) doped with 1 at% Aluminum exhibited higher sensing performance (response 245, response time ~ 3 s, and sensitivity 23 ppm-1) than pure ZnO and those made by a hydrothermal method (HT) (56, ~ 12 s, and 4 ppm-1) for detection of 10 ppm acetone. Furthermore, their sensing response of ~10 to 0.1 ppm of acetone at 90% RH is superior to other metal oxide sensors and they feature good acetone selectivity to other compounds (including NH3, isoprene and CO). Characterization by N2 adsorption, X-ray photoelectron and UV-vis spectroscopies reveals that the improved sensing performance of flame-made Al-doped ZnO NPs is associated primarily to a higher density of oxygen vacancies than pure ZnO and all HT-made NPs. This leads to a greater number of adsorbed oxygen ions on the surfaces of Al-doped ZnO NPs, which can react with acetone molecules.
关键词： nanoparticles,flame spray pyrolysis,Al-doped ZnO,acetone,gas sensors
更新于2025-09-10 09:29:36
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Synthesis of Sn-doped ZnO hierarchical particles and their gas-sensing properties
摘要： In this work, un-doped and Sn-doped hierarchical ZnO particles with high dispersity were successfully fabricated by a facile liquid reaction. The prepared samples are characterised by X-ray diffraction and scanning electron microscopy. The as-synthesised hierarchical ZnO particles with a diameter of ～1.5 μm were obtained by considerably intersecting thin nanosheets of ～20 nm thickness. The morphology of ZnO structures can be varied by adjusting reaction parameters, e.g. reaction temperature, calcination temperature, and dopant concentration. On the basis of experimental results, the gas-sensing measurement displays that the sensor based on Sn-doped ZnO microstructures have a low detection of 10 ppm ethanol at an operational temperature of 250°C, demonstrating its outstanding gas-sensing performance. Therefore, the ?ower-like Sn-doped ZnO have prospective applications in a multifunction ethanol sensor. Moreover, the fabrication method reported in the work is facile, ?exible and operable, it is possible to extend to synthesise other types of metal oxide-based applications in various ?elds.
关键词： Sn-doped ZnO,hierarchical particles,facile liquid reaction,gas-sensing properties,ethanol sensor
更新于2025-09-10 09:29:36