Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration

摘要： We have fabricated large area integrated top-gate nMISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al2O3 enhance the process endurance of MoS2 channel. Therefore, we demonstrate TiN-top-gate nMISFET, which is a substantial first step to realize industrial chip-level LSIs with MoS2-channel FETs.