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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A Broadband 1-dB Noise Figure GaAs Low-Noise Amplifier for Millimeter-Wave 5G Base-Stations
摘要： A broadband low-noise amplifier (LNA) with sub-1 dB noise figure (NF), intended for use in millimeter-wave 5G base-stations, have been fabricated in 0.1-μm InGaAs pHEMT technology. Common-source topology with inductive source degeneration is utilized for simultaneous noise and input match. Measurement results show this LNA achieves a gain of 7.9 dB at 24-GHz and a -1 dB bandwidth of 5-GHz, while consuming 13 mW from a 1-V supply. The noise figure is below 1.5 dB from 21-GHz to 27-GHz, with a lowest noise figure of 0.7 dB at 26-GHz.
关键词： millimeter-wave,noise figure,pHEMT,5G,low-noise amplifier,GaAs
更新于2025-09-23 15:22:29
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Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications
摘要： This paper presents a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in CE configuration. The presented amplifier stage can achieve sub-1dB NF performance with ~10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors' knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.
关键词： noise,transceivers.,low-noise amplifier,BiCMOS integrated circuits
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 5G World Forum (5GWF) - Silicon Valley, CA, USA (2018.7.9-2018.7.11)] 2018 IEEE 5G World Forum (5GWF) - Packaged High Power Frond-End Module for Broadband 24GHz & 28GHz 5G solutions
摘要： This paper presents realization and characteristics of broadband plastic low cost packaged 5G High Power Frond-End (HPFE) operating in 24-31GHz bandwidth. This demonstrator includes a Transmit and Receive paths realized on mixed technologies: 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs). Continuous Wave (CW) measured power results of the Transmit path (Tx) demonstrates a maximum output power (POUT,Tx) higher than 2W (33.5dBm) with 25% drain efficiency (DE), 24% power added efficiency (PAE), and 36dB of insertion gain (GI,Tx) in the 24-31GHz bandwidth. The receiver path (Rx) presents an maximum output power (POUT,Rx) of 30mW (15.5dBm) and an average Noise Figure (NF) of 3.6dB with an associated Insertion Gain (GI,Rx) of 20dB in the same bandwidth. The HPFE/Tx linearity has been investigated with several M-QAM modulation signals with 25/50 and 100MHz channel spacing and using Digital Pre-Distortion (DPD) leading to 48dBc Adjacent Channel Leakage Ratio (ACLR) and 40dB Mean Squared Error (MSE) for average output powers ranging from linearity performances have been 17dBm to 25dBm. The compared to the ones obtained with two other linear GaAs amplifiers to point telecommunications application: the HPFE presents similar linearity performances associated to a higher efficiency. Thanks to the mixed technologies approach, an optimized trade-off in terms of integration, electrical performances and cost has been demonstrated.
关键词： MMIC,PHEMT,Gallium Arsenide,Plastic packaging,Transmit/Receive path,Low Noise Amplifier,Gallium Nitride,Power Amplifier,Switch
更新于2025-09-23 15:21:01
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[IEEE 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2018.6.29-2018.7.3)] 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - An Interface Model of the Interconnection Between Integrated Circuit Chip Die and Printed Circuit Board
摘要： This work represents results obtained during research of high frequency IC packaging. The interface between IC die and PCB is described and its inner structure is developed: contact pads on IC die, bondwires and chip outputs. As an example of method developed the interface effects into device development and characteristics are shown for the LNA module as a part of the GPS receiver test chip.
关键词： LNA,Low noise amplifier,GPS,CMOS,chip packaging,Noise Figure
更新于2025-09-19 17:15:36
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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A 1.2-dB Noise Figure Broadband GaAs Low-Noise Amplifier with 17-dB Gain for Millimeter-Wave 5G Base-Station
摘要： A 24-30GHz low-noise amplifier (LNA) with 1.2-dB noise figure (NF) is designed for millimeter-wave 5G stations. The LNA has 2 stages, 1st stage utilizes source degeneration inductor for simultaneous noise and input match. 2nd stage uses the same structure for staging match and the trade-off between gain and noise optimization. A structure of parallel resistor and capacitor is utilized for bandwidth and stability. Simulation result shows that the LNA achieves peak gain of 17.8-dB, and the 1-dB bandwidth is over 6-GHz. NF is below 1.35-dB in the bandwidth.
关键词： low-noise amplifier,pHEMT,millimeter-wave,5G,GaAs,noise figure
更新于2025-09-19 17:15:36
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Nonlinear and Permanent Degradation of GaAs-Based Low-Noise Amplifier Under Electromagnetic Pulse Injection
摘要： Electromagnetic pulse (EMP)-induced nonlinear degradation of an L-band gallium arsenide-based low-noise amplifier (LNA) is studied by an injection experiment, failure analysis, and mixed-mode simulation. The experimental results indicate that the real-time response, radio frequency, and direct current characteristic of LNA samples under an EMP show nonlinear and permanent degradation features. In detail, the characteristics first degrade and then recover slightly as the injection power increases. In addition, the nonlinear degradation shows a close dependence on the pulse properties. Failure analysis reveals that the degradation of the LNA is attributed to latent failure defects under and around the gate metal strip of the first-stage high electron mobility transistor, with recovery well interpreted by an EMP-induced 'annealing effect.' Simulation results show that if the pulse repetition frequency is smaller than 2.5 kHz, a pulse repetition-induced thermal accumulation effect will not occur and that the pulsewidth τ will mainly determine the actual action duration and the temperature of the 'annealing effect.' Based on the above mechanism, the dependence of the pulse properties on nonlinear degradation is well explained.
关键词： nonlinear,low-noise amplifier (LNA),mechanism,electromagnetic pulse (EMP),Degradation
更新于2025-09-19 17:15:36
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[IEEE 2018 Asia-Pacific Microwave Conference (APMC) - Kyoto, Japan (2018.11.6-2018.11.9)] 2018 Asia-Pacific Microwave Conference (APMC) - 23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology
摘要： Gallium Nitride (GaN) high electron mobility transistors (HEMTs) have become good candidate for microwave power amplifier application. Furthermore, by combining the high power and the low noise performance, GaN HEMTs also show a great potential in high linearity low noise amplifier application. In this report, a four-stage low noise amplifier using commercial 100 nm GaN on Silicon Technology is presented. The designed LNA achieves a noise figure of 2.2-2.8 dB and a small signal gain of 25-29 dB from 23 to 31 GHz. The output 3-dB compression point (P3dB) is in the 17 dBm range. The LNA works with only one DC power supply and has a chip size of 2.3mm × 1mm. Compared with the existing Gallium Arsenic technology, this LNA has higher gain, higher linearity while keeping the noise figure at the same level.
关键词： GaN on silicon,Linearity,Low-noise amplifier
更新于2025-09-19 17:15:36
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Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications
摘要： The cryogenic performance of radiation-hardened radio-frequency (RF) low-noise amplifiers (LNAs) is presented. The LNA, which was originally proposed for the mitigation of single-event transients (SETs) in a radiation environment, uses inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in its core cascode stages. In this prototype, the upper common-base SiGe HBT is configured in inverse mode for balanced RF performance and reduced SET sensitivity. In order to better exploit the inverse-mode LNAs in a variety of extreme-environment applications, the RF performance of the LNA was characterized using liquid nitrogen to evaluate cryogenic operation down to 78 K. While the SiGe LNA exhibits acceptable RF performance for all temperature conditions, there is a noticeable gain drop observed at 78 K compared to the conventional forward-mode design. This is attributed to the limited high-frequency performance of an inverse-mode SiGe HBT. As a guideline, compensation techniques including layout modifications and profile optimization are discussed for the mitigation of the observed gain degradation.
关键词： low-noise amplifier (LNA),heterojunction bipolar transistor (HBT),cascode,inverse mode,extreme environment,cryogenic measurement,silicon-germanium (SiGe)
更新于2025-09-11 14:15:04
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An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier
摘要： This paper deals with an accurate experimental investigation of the optical sensing behavior of a microwave low-noise amplifier (LNA). The tested amplifier, employing a commercial InGaAs pHEMT has been analyzed in terms of the scattering parameters and the noise figure. The analysis has been carried out by observing how the device behavior is influenced by a continuous wave laser illumination for different optical wavelengths, power levels, and bias conditions. It has been assessed that the LNA performance is significantly influenced by the light exposure with optical effects more pronounced at higher wavelengths for a fixed incident power. Upon applying the recommended bias conditions of the sensing amplifier, the main changes consist of a degradation of the noise figure and gain. As opposite to this, an overall performance enhancement is clearly recognizable with the amplifier biased at the transistor pinch-off. The results obtained in the present work fully confirm a theoretical analysis previously carried out by employing different devices and LNA design.
关键词： low-noise amplifier,noise and scattering parameters,InGaAs pHEMT,Optical sensing
更新于2025-09-09 09:28:46
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Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends
摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.
关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band
更新于2025-09-04 15:30:14