研究目的
To design a low-noise amplifier with high gain and low noise figure for millimeter-wave 5G base-stations to improve receiver performance.
研究成果
The designed LNA achieves a noise figure below 1.35 dB and gain around 17 dB over a 6 GHz bandwidth, making it suitable for improving the noise performance of 5G base-station receivers when integrated with CMOS systems.
研究不足
The study is based on simulation results only; no experimental validation is provided. The design is specific to 24-30 GHz band and may not generalize to other frequencies. Power consumption and thermal effects are not discussed.
1：Experimental Design and Method Selection:
The LNA is designed using a two-stage common-source topology with source degeneration inductors for noise and input matching, and a parallel resistor-capacitor structure for bandwidth and stability. Simulation-based design using 0.1-μm InGaAs pHEMT technology.
2：1-μm InGaAs pHEMT technology.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Transistors of different sizes (2×25 μm, 4×25 μm, 2×50 μm, 4×50 μm) are simulated to select the optimal one based on maximum available gain and minimum noise figure.
3：List of Experimental Equipment and Materials:
Simulation software (not specified), 0.1-μm InGaAs pHEMT technology, microstrips for matching networks, resistors, capacitors, inductors.
4：1-μm InGaAs pHEMT technology, microstrips for matching networks, resistors, capacitors, inductors.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Transistor selection via simulation, bias voltage optimization, implementation of source degeneration and parallel RC structure, circuit layout design, and S-parameter and noise figure simulation.
5：Data Analysis Methods:
Analysis of simulation results for gain, noise figure, bandwidth, and stability using standard RF metrics.
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