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The Effect of the Thickness and Oxygen Ratio Control of Radio-Frequency Magnetron Sputtering on MgZnO Thin-Film Transistors
摘要： In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14% to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V · s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.
关键词： RF Sputtering,Magnesium Zinc Oxide,Thin-Film Transistor
更新于2025-09-09 09:28:46
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Preparation of Nano Spinel Doped TiO <sub/>2</sub> and Its Photocatalytic Activity Evaluation Under Visible Light Irradiation
摘要： Nano MgFe–TiO2 photocatalyst was prepared by mixing nanoscale spinel compounds such as magnesium ferrite (MgFe) and TiO2. The cations produced by MgFe are affected by various influencing factors such as calcination temperature, precursor, and mass ratio of Mg and Fe. This study is to evaluate the photocatalytic efficiency of nano MgFe-doped TiO2 under visible light according to the composition ratio of Mg, Fe and TiO2. With an increase the percentage of doping (i.e., Mg and Fe) over TiO2, the band gap between conduction band and valance band decreases, therefore showing better photocatalytic activity in visible light. Also as percentage of doping over TiO2 increases, surface area of the catalyst also increases subsequently resulting in an increase in the adsorption capacity.
关键词： Visible Light,Spinel Compound,Magnesium Ferrite,Photocatalysis,TiO2
更新于2025-09-04 15:30:14
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A new design of the YIG/MTC joint brazed by bismuth-based glass
摘要： The paper uncovers an underlined mechanism of joining Yttrium Iron Garnet (YIG) and Magnesium Titanate Ceramic (MTC) with a bismuth-based glass braze. The proposed joint design has not been investigated until present. The central hypothesis is as follows. The brazed bismuth-based glass microstructure and the resulting mechanical strength of a YIG/MTC joint design support favorably a good bonding of the interface domains. The supporting evidence includes the following: (i) the bismuth-based glass features good wettability on YIG and MTC, (ii) the sequence of the coefficients of thermal expansions (YIG, bismuth-based glass, MTC) is in a favorable succession. The study reveals that the interface reactions form: (i) a lamellar phase and YBO3 whiskers at the YIG/Bi25 interface, (ii) both MgFe2O4, and Bi4Ti3O12 whiskers in addition to Zn2Ti3O8 reaction layer at the MTC/Bi25 interface, and (iii) Fe2O3 phase along the brazing seam. The mechanical integrity of joints has been studied as well.
关键词： Magnesium titanate ceramic,Whiskers,Microstructure,Bismuth-based glass braze,Yttrium iron garnet ferrite
更新于2025-09-04 15:30:14
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Improvement of response time in GAGG:Ce scintillation crystals by magnesium codoping
摘要： Dynamics of the population of the excited Ce states responsible for the luminescence response time in Gd3Al2Ga3O12:Ce scintillating crystals is studied by revealing the dynamics of nonequilibrium carriers in the picosecond domain. Optical pump and probe technique exploiting selective excitation of structural units of the crystal and probing the induced absorption as a function of time and spectral position is exploited. A fast response within a few picoseconds due to the absorption by holes at Gd ions and by electrons occupying the first excited state of Ce ions with the intracenter relaxation time of 500 fs are identified. Trapping of nonequilibrium electrons during their migration through the matrix to the emitting Ce ions are shown to be responsible for the slow component in the population of the excited Ce state. Elimination of the slow component is evidenced even at Mg codoping as low as 10 ppm. The elimination correlates with the acceleration of the response in coincidence time resolution experiments showing potential of GAGG:Ce, Mg in medical and high-energy physics applications.
关键词： response time,nonequilibrium carriers,optical pump and probe technique,magnesium codoping,scintillation crystals,GAGG:Ce,coincidence time resolution
更新于2025-09-04 15:30:14
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Development of a nanoscale-based optical chemical sensor for the detection of NO radical
摘要： Nitric oxide is one of the most important biochemical parameters in biological processes; it is also known as carcinogenic. There is need for the design of stable and durable solid phase nitric oxide sensors. In this study, we immobilized the nitric oxide sensitive molecules pyrene, tris(2,2’-bipyrdyl)dichlororuthenium(II) hexahydrate (Ru(bipy) 2+ 3 ) , and magnesium phthalocyanine (Mg-Pc) for the first time in polymeric or glassy matrices. We applied silver nanoparticles and ionic liquids in the fabrication process of polymeric electrospun fibers and thin films. We compared their NO sensitivity in micelle solutions that mimic the cell medium by both steady state and lifetime-based fluorescence measurements. Among the tested dyes, the pyrene exhibited the highest response for radicalic NO. The Mg-Pc dye followed pyrene in terms of sensitivity and exhibited increasing fluorescence intensity and lifetime-based response. Lifetime-based response is advantageous and selective as it is not affected by source variations, photo-bleaching, or leaching effects. Another advantage of Mg-Pc dye is that it is not poisonous for organic systems. Presence of the ionic liquid enhanced the sensor response in all of the test moieties. The obtained limit of detection values for pyrene, Ru(bipy) 2+ and Mg-Pc dyes were 0.15 (cid:22) M, 1.54 (cid:22) M, and 0.78 (cid:22) M, respectively.
关键词： electrospinning,Nitric oxide radical,nanomaterials,ruthenium complex,magnesium phthalocyanine,pyrene,time resolved fluorescence
更新于2025-09-04 15:30:14
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Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering
摘要： The recent realization of memristors, nanodevices exhibiting non-volatile resistive switching, has sparked tremendous interest for applications in fields such as nonvolatile memories. Here we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with an oxide barrier thickness of only 15 nm. No electroforming process was required to achieve resistive switching and an ohmic conduction mechanism is associated with the ON state. We observed an inverse dependence of the ON state resistance on the SET current compliance and average values of 1.61 V and 1.38 V for the SET and RESET voltages, respectively. We show the stability of the switching for over 40 cycles and a clear separation of the ON (101 Ω) and OFF (102 Ω) states during at least 104 s.
关键词： Memristors,Magnetron Sputtering,Magnesium Oxide,Resistive Switching
更新于2025-09-04 15:30:14