研究目的
Investigating unipolar non-volatile resistive switching in Pt/MgO/Ta/Ru structures for applications in nonvolatile memories.
研究成果
Unipolar resistive switching was achieved in Pt/MgO/Ta/Ru structures without the need for an electroforming process. The study demonstrated a dependence of the ON state resistance on the SET current compliance and a good separation of the two resistive states over time.
研究不足
The OFF/ON resistances ratio is still small, likely due to the large area of the devices, and should increase upon scaling.
1：Experimental Design and Method Selection:
The study involved fabricating Pt/MgO/Ta/Ru structures to study resistive switching behavior. The MgO layer and Ta/Ru top electrode were deposited using magnetron sputtering.
2：Sample Selection and Data Sources:
The insulator/top electrode stacks were defined using a shadow mask with circle-shaped apertures.
3：List of Experimental Equipment and Materials:
A Keithley SourceMeter 2400 was used for current-voltage characteristics measurement.
4：Experimental Procedures and Operational Workflow:
Measurements were performed applying bias voltage on the top electrode with the bottom electrode grounded, using a current compliance to avoid damaging the sample.
5：Data Analysis Methods:
The transport mechanisms in both resistance states were analyzed by plotting the I-V curve in a log-log scale.
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