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Crystalline Semiconductor Boron Quantum Dots
摘要： Zero-dimensional boron structures have always been the focus of theoretical research owing to its abundant phase structures and special properties. Boron clusters have been reported extensively by combining structure searching theories and photoelectron spectroscopy experiments, however, crystalline boron quantum dots (BQDs) have rarely been reported. Here we report the preparation of large-scale and uniform crystalline semiconductor BQDs from the expanded bulk boron powders via a facile and efficient probe ultrasonic approach in acetonitrile solution. The obtained BQDs have 2.46 nm in an average lateral size and 2.81 nm in thickness. Optical measurements demonstrate that strong quantum confinement effect occurs in the BQDs, implying the increase of the bandgap from 1.80 eV for the corresponding bulk to 2.46 eV for the BQDs. By injecting the BQDs into polyvinylpyrrolidone as an active layer, a BQDs-based memory device is fabricated which shows a rewriteable nonvolatile memory effect with a low transition voltage of down to 0.5 V and a high ON/OFF switching ratio of 103 as well as a good stability.
关键词： ultrasound,quantum dots,nonvolatile memory device,quantum confinement effect,boron
更新于2025-11-14 15:23:50
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Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer
摘要： In this work, we present a pentacene-based organic ?eld-e?ect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ±60 V and a retention time of up to 104 s.
关键词： memory window modulation,integrated hybrid nanolayer,organic ?eld-e?ect transistor memory device,carbon quantum dots
更新于2025-09-23 15:21:01
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Zirconia quantum dots for a nonvolatile resistive random access memory device
摘要： We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO2) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO2 (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO2 active layer. Experimental results show that the ZrO2 active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO2 QDs. The conductive mechanism of the Ag/ZrO2/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.
关键词： Resistive switching,Spin coating,Memory device,Zirconia quantum dot
更新于2025-09-19 17:13:59
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An excellent resistive switching memory behaviour based on assembled MoSe2 nanosphere arrays
摘要： Resistive switching devices based on oxides have outstanding properties, making them a promising candidate to replace today's transistor-based computer memories as non-volatile memories, and can even find future application in neuromorphic computing. In this work, MoSe2 nanospheres with ~2.0 μm diameter were firstly synthesized by hydrothermal method. Further, a resistive switching (RS) device was prepared using as-assembled MoSe2 nanospheres array acted as functional layer. The device shows excellent RS memory behaviors with stable resistance ratio and high durability. Besides that, the mechanism of RS behavior is explained from the perspective of formation-disruption of conducting filaments (CF) formed by moving of metal ions on the surface of nanospheres by an external electric field. These characteristics give us a new inspiration for the preparation of memristors that is the memory performance of RS can be improved by assembling nanostructured arrays.
关键词： Conducting filaments,MoSe2 nanosphere,Memory device,Electronic materials,Resistive switching
更新于2025-09-16 10:30:52
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Self-assembled naphthalimide nanoparticles for non-volatile ReRAM devices: an efficient approach towards high performance solution-processed and all-organic two terminal resistive memory devices
摘要： For almost a decade, organic non-volatile memory incorporating an inorganic metal/ semiconductor nanoparticles in organic polymers are well established in fabricating the resistive switching memory devices. In contrast, for the first time, with an aim to develop all-organic and environment-friendly memory devices, organic small molecule based nanoparticles have been utilized herein to fabricate high performance resistive random access memory (ReRAM) device by incorporating them into a polymer matrix. A naphthalimide based small molecule with formyl and multiple fluorine moieties has been strategically utilized, which enhances the intermolecular H-bonding and subsequently strengthens the intermolecular π-π stacking interaction during nanoaggregate formation. To generate a stable monodispersed nanoparticle with an average diameter of 50 nm, a straightforward yet cost-effective reprecipitation technique has been used. The prepared nanoparticle has been embedded into the polyvinyl alcohol (PVA) polymer matrix to serve as a reliable alternative of the conventional inorganic nanoparticles. The fabricated memory device exhibits an error free memory window with an Ion/off ratio of 103 and a very low write/erase voltage of ±2 V which are effectively comparable to the existing inorganic nanoparticle based memory devices. In addition, theoretical models employed to study the charge transport of the device suggested that the conduction in the device is ultimately a trap-controlled space charge limited current (SCLC). Furthermore, the endurance, repeatability test and concentration studies are also thoroughly performed on the device to validate its stability. This simple yet potential approach of incorporating organic nanoparticles into an organic insulator polymer is an easy, greener and a powerful technique to develop all-organic non-volatile memory device and could offer a premise for the future development of high performance low-cost electronic memory devices.
关键词： organic nanoparticle,polymer memory device,all-organic memory device,resistive random access memory,nanocomposites
更新于2025-09-11 14:15:04
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Resistive switching effect enhanced by light irradiation in C/BaTiO <sub/>3</sub> /C memory structure
摘要： The Ta/[C/BaTiO3/C]/Si device was obtained. The resistive switching (RS) behaviors of the Ta/[C/BaTiO3/C]/Si device are studied in the dark and under white-light illumination with various power densities. The results show that the device displays bipolar RS effect, which can be modulated by the white light. And the RS memory device shows biggish resistance ratio, which is more than 105 under white-light irradiation with a power density of 40 mW/cm2, and the ratio can stabilize at nearly 71 cycles. This work is helpful for the optical control non-volatile memory.
关键词： C/BaTiO3/C,memory device,Resistive switching,white light
更新于2025-09-10 09:29:36