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Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display
摘要： Micro light-emitting diode (micro-LED) display, mainly based on inorganic GaN-based LED, is an emerging technique with high contrast, low power consumption, long lifetime and fast response time compared to liquid crystal display (LCD) and organic light-emitting diode (OLED) display. Therefore, many research institutes and companies have conducted in-depth research on micro-LED in the full-colour display, gradually realizing the commercialization of micro-LED. And the current research results of micro-LED indicate that it can be widely used in display, visible light communication (VLC), biomedicine and other fields. Although micro-LED has broad commercial prospects, it still faces great challenges, such as the effect of size reduction on performance, the realization of high-density integration on a single wafer for independent addressing of full-colour micro-LED display, the improvement of repair technique and yield, et al. This paper reviews the key solutions to the technical difficulties of the full-colour micro-LED display. Specifically, this review analyzes and discusses a variety of advanced full-colour micro-LED display techniques with a focus on three aspects: growth technique, transfer printing technique and colour conversion technique. This review demonstrates the opportunities, progress and challenges of these techniques, aiming to guide the development of full-colour micro-LED display.
关键词： full-colour,growth,transfer printing,Micro-LED display,colour conversion
更新于2025-09-23 15:19:57
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Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
摘要： In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 μm and an ultra-high current density of 9902 A/cm2. The forward voltages (VF) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm2. The size and structure-dependent effects were subsequently investigated to optimize the device design. The reliability of Micro-LED devices was evaluated under long-aging, high-temperature, and high-humidity conditions. It was found that Micro-LED devices can maintain comparable performance with an emission wavelength of about 445 nm and a full width at half maximum (FWHM) of 22 nm under extreme environments. Following this, specific analysis with four detailed factors of forward voltage, forward current, slope, and leakage current was carried out in order to show the influence of the different environments on different aspects of the devices.
关键词： GaN-based micro-LEDs,micro-LED display,reliability test
更新于2025-09-19 17:13:59
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P‐16.1: Study of Active Matrix Circuits Design for Micro‐LED displays and Visible Light Communications
摘要： Because Micro-LED is the current-driven device, there are usually two types of the matrix driving circuit, passive matrix driving circuit, and active matrix driving circuit. Comparing these two driving circuits, the active driving circuit can achieve better brightness uniformity, higher contrast and lower contrast. Therefore, most of Micro-LEDs use active matrix driving circuit. In this paper, a study of active matrix circuit design for Micro- LED displays and beyond display applications such as visible light communication will be reported. The pixel circuit integrates two parts of VLC together, the emitter and the receiver. When the LED is on, it can work as the emitter of VLC. When the LED is off, the photodetector can work as the receiver of the VLC. This can offer more varieties of the application, such as face-to-face data transmission, under-screen fingerprint identification and so on.
关键词： pixel circuit,Micro-LED display,visible light communication
更新于2025-09-12 10:27:22
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P‐9.10: Fabrication of micro scale and ultra‐thin LEDs for micro‐LED display applications
摘要： Presented here are the fabrication techniques for preparing micro scale and ultra-thin LEDs for micro-LED display applications. Lateral dimension less than 100μm and thickness of 5μm LED devices are fabrication and the preparing micro LEDs are transferred from the original growth substrate to the glass substrate successfully. The optoelectronic performance of micro scale and ultra-thin LEDs transferred on to the glass substrate as good as that of on the original growth substrate has achieved.
关键词： Micro LED Display,Micro LED,transfer
更新于2025-09-11 14:15:04