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- solution deposition
- printable electronic transport layer
- multilayer OLEDs
- fully inkjet printed
- terahertz
- vector fitting
- impedance
- multilayer graphene
- Optoelectronic Information Science and Engineering
- Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Nanjing University of Posts and Telecommunications
- Peking University
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Low-Damage Reactive Ion Etching of Nanoplasmonic Waveguides with Ultrathin Noble Metal Films
摘要： Nanoplasmonic waveguides utilizing surface plasmon polaritons (SPPs) propagation have been investigated for more than 15 years and are now well understood. Many researchers make their efforts to find the best ways of using light and overcoming the speed limit of integrated circuits by means of SPPs. Here, we introduce the simulation results and fabrication technology of dielectric-metal-dielectric long-range nanoplasmonic waveguides, which consists of a multilayer stack based on ultrathin noble metals in between alumina thin films. Various waveguide topologies are simulated to optimize all the geometric and multilayer stack parameters. We demonstrate the calculated propagation length of Lprop = 0.27 mm at the 785 nm wavelength for the Al2O3/Ag/Al2O3 waveguides. In addition, we numerically show the possibility to eliminate signal cross-talks (less than 0.01%) between two crossed waveguides. One of the key technology issues of such waveguides’ nanofabrication is a dry, low-damage-etching of a multilayer stack with extremely sensitive ultrathin metals. In this paper, we propose the fabrication process flow, which provides both dry etching of Al2O3/Au(Ag)/Al2O3 waveguides nanostructures with high aspect ratios and non-damage ultrathin metal films patterning. We believe that the proposed design and fabrication process flow provides new opportunities in next-generation photonic interconnects, plasmonic nanocircuitry, quantum optics and biosensors.
关键词： plasmonic nanocircuitry,multilayer waveguide,nanoplasmonic waveguide,low-damage alumina etch,noble metals etching,multilayer stack etching
更新于2025-09-11 14:15:04
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Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide
摘要： Recently, Empty Substrate Integrated Waveguide (ESIW) technology was proposed for embedding empty waveguides into planar substrates in order to improve their performance. A low-loss and narrow-band transition from microstrip to an increased height ESIW with 4 layers was presented in a previous work, and used to implement a very high-quality factor bandpass filter at Q-band. With such a narrow-band transition, based on a quarter-wavelength transformer, a very narrow-band filter response with resonators having a quality factor of 1000 was achieved. In this paper, in order to overcome the narrow-band and the 4-layers output restrictions, and extend the practical use of such increased height ESIWs beyond narrow-band filters, we present a novel wideband transition from microstrip to an increased height ESIW with an arbitrary number of layers. A full suite of wideband transitions to increased height ESIWs, built with different number of substrate layers ranging from 3 to 8, has been designed in this work to operate at Ka-band, though they can be easily transferred to other bands if the dimensions of the transition are properly scaled. To illustrate this, the original Ka-band transitions have been mapped to Ku-band, with excellent results. In order to test the proposed design method, a prototype of a 4-layer structure has been fabricated at Ka-band, achieving a good performance in the whole useful bandwidth of the ESIW.
关键词： Empty substrate integrated waveguide,multilayer,SIW,substrate integrated waveguide,substrate integrated circuit,microstrip transition,high quality factor,SIC,ESIW
更新于2025-09-11 14:15:04
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Mechanical modeling and characterization of suspended cooled silicon bolometers for sub-millimeter and millimeter waves polarization detection
摘要： Silicon bolometers for space and astronomy applications, fabricated in standard CMOS-SOI technology are now successfully used as cryogenic detectors working at very low temperature, typically in the range of 0.05–0.1 K. They feature a remarkably high electromagnetic absorption, high temperature sensitivity and low noise. However, the mechanical behavior of suspended silicon bolometers results from the fabrication process parameters and a good understanding of these mechanisms is necessary to better control their deformation. In this work, silicon bolometer pixels with a pitch of 1200 μm and 500 μm for millimeter-wave (mm-wave) polarization detection have been fabricated and their mechanical behavior is investigated at room temperature and cryogenic temperature. First, a mechanical model was developed based on simulated and experimental deformations at room temperature of multi-layer cantilever test structures with different Young’s modulus and thickness (Ei, hi). The actual multi-layer suspended structures are modeled as an equivalent composite layer with an effective Young’s modulus (Eeff), an effective thickness (heff) and residual stresses (σ0, σ1). The residual stress values are positive, corresponding to a tensile stress in the fabricated multilayer stack. The impact of the a-Si passivation thickness on the total stress is discussed. The equivalent model is used in the simulation of the full pixel structure and results in excellent agreement with optical measurements of the deflection at room temperature. At cryogenic temperatures, mechanical deformations can hardly be measured, so the mechanical behavior of a 500-μm pixel was simulated at 0.1 K assuming that tensile residual stresses coming from defects are independent on temperature, and a good mechanical stability of the pixel was obtained. The optical performance simulation of this 500-μm pixel is discussed and showed that the mechanical deformations result in a degradation of the Noise Equivalent Power (NEP) from 1.59 × 10?18 to 1.05 × 10?17 W/Hz1/2 for an optical load of 6 × 10?15 W at 0.1 K.
关键词： Multilayer mechanical model,Cantilever,Doped silicon,FEM,Bolometer
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE 23rd Workshop on Signal and Power Integrity (SPI) - Chambéry, France (2019.6.18-2019.6.21)] 2019 IEEE 23rd Workshop on Signal and Power Integrity (SPI) - Use of Multilayered-PCB for Q-band Substrate Integrated Waveguide Components
摘要： This paper proposes the design of a fourth order filter centered at 36 GHz. The particular technological process in use during this work allowed the realization of both blind and open-ended via-holes. Those were obtained by microvias or Plated Through Holes (PTH) techniques respectively. Originality of this work relies in the exploitation of this particular fabrication process to implement a filter using novel input/output couplings made from plungers. These couplings also assure the role of mode transition between the quasi-TEM microstrip mode to the Substrate Integrated Waveguide mode. Based on this novel coupling/transition, a prototype has been designed, simulated and fabricated on a 1mm-thick PCB made of copper and Megtron6 material (eps=3.6, tan(δ)=6e-3). Regarding the results of this device, measured insertion & return losses are in a very good agreement with simulations, and measured performances are Insertion Losses of 3 dB for an 8% relative bandpass filter centered at 36 GHz.
关键词： PCB,filter,transition,SIW,multilayer
更新于2025-09-11 14:15:04
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A high efficiency silicon nitride waveguide grating coupler with a multilayer bottom reflector
摘要： We propose a high efficiency apodized grating coupler with a bottom reflector for silicon nitride photonic integrated circuits. The reflector consists of a stack of alternate silicon nitride and silicon dioxide quarter-wave films. The design, fabrication and optical characterization of the couplers has been presented. The measured fiber to detector insertion loss was ?3.5 dB which corresponds to a peak coupling efficiency of ?1.75 dB. A 3 dB wavelength bandwidth of 76.34 nm was demonstrated for the grating coupler with a 20-layer reflector. The fabrication process is CMOS-compatible and requires only a single etching step.
关键词： apodization,grating coupler,photonic integrated circuits,silicon nitride,multilayer reflector
更新于2025-09-11 14:15:04
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Self‐Healable Black Phosphorus Photodetectors
摘要： Large‐strain multilayer actuators (MLAs) were fabricated by tape‐casting 0.91(Na1/2Bi1/2)TiO3–0.06BaTiO3–0.03AgNbO3 (NBT‐BT–3AN) lead‐free incipient piezoceramics co‐fired with Pt inner electrodes. Microstructures, dielectric properties, unipolar and bipolar strain, as well as fatigue properties of the MLAs were investigated. It was found that the actuator consisting of 15 ceramic layers with individual thicknesses of 114 μm could output a large unipolar strain of 0.3% and a dynamic displacement of 5 μm at 6 kV/mm at room temperature. It exhibited excellent cycling stability and provided a high strain of 0.23% after 107 cycles at 6 kV/mm. Moreover, these MLAs still can deliver a strain of 0.20% at 125°C.
关键词： lead‐free piezoceramics,multilayer actuators,large strain,cycling stability,temperature stability
更新于2025-09-11 14:15:04
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Planarization of Slot-Die Coated Multilayer Stripes via Pre-drying by a Heating Roll for Organic Light-Emitting Diodes
摘要： Micro-patterning of single-layer thin films in the cross-web (transverse) direction is feasible using a slot-die coating system. For its practical applications in organic light-emitting diodes (OLEDs), however, the fabrication and planarization of multilayer thin-film stripes are indispensable. We have coated multilayer stripes using an aqueous poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) and non-aqueous poly(N-vinylcarbazole) (PVK) and planarized them via pre-drying by a heating roll in a roll-to-roll slot-die coating system. It is demonstrated that the PEDOT:PSS stripe can be planarized at a pre-drying (heating roll) temperature of 40 °C. At higher temperatures, it is found that there appear the evaporation-induced inward and/or outward capillary flows depending on the wet film thickness. Using a low-boiling-point solvent, the PVK stripe coated atop the planarized PEDOT:PSS stripe is shown to be planarized at a pre-drying temperature of 65 °C, the step coverage and thickness uniformity by which are substantially enhanced. Such a planarization scheme also brings in the positive effect on the surface morphology of those stripes. To verify the planarization effect at the device level, we have fabricated phosphorescent OLED stripes. Without planarization, the light-emitting area shrinks and a spot with strong light emission appears, increasing the probability of a short circuit in OLEDs. With planarization, however, we can achieve brighter light emission from OLED stripes with high inter-stripe emission uniformity.
关键词： planarization,Slot-die coating,organic light-emitting diode,heating roll,multilayer stripes
更新于2025-09-11 14:15:04
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Electro-optical dual modulation on resistive switching behavior in BaTiO <sub/>3</sub> /BiFeO <sub/>3</sub> /TiO <sub/>2</sub> heterojunction
摘要： The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide (FTO) substrate by the sol–gel method. The results indicate that the Pt/BaTiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current (SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarization-modulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state (RS), which is formed by the double ferroelectric layer BaTiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory (RRAM) devices based on ferroelectric materials.
关键词： multi-state resistance,resistive switching characteristic,electro-optical dual modulation,ferroelectric multilayer heterojunction
更新于2025-09-11 14:15:04
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[IEEE 2018 5th International Conference on Systems and Informatics (ICSAI) - Nanjing (2018.11.10-2018.11.12)] 2018 5th International Conference on Systems and Informatics (ICSAI) - Modeling of Multilayer Graphene at Terahertz with Vector Fitting Method
摘要： Graphene is a promising carbon nanomaterial, and multilayer graphene are more interesting than the monolayer one. The dispersion of multilayer graphene at terahertz (THz) leads to difficulties in transient electromagnetic simulation, e.g. the time domain integral equation (TDIE) method. This paper aims to achieve accurate fitting of multilayer graphene dispersive surface conductivity/impedance over ultra wideband THz frequencies. Graphene surface conductivity/impedance at THz is calculated by the Kubo formula. Thereafter, the surface conductivity and impedance is approximated by vector fitting method with expansions of several pairs of poles and residues. Numerical results are provided to validate the proposed method. Multilayer graphene time domain surface impedance which is used in the impedance boundary condition (IBC) for TDIE can be obtained readily by the inverse Fourier transform of its frequency domain counterpart.
关键词： terahertz,vector fitting,impedance,multilayer graphene
更新于2025-09-11 14:15:04
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Effect of Laser Power on Gradient Microstructure of Low-Alloy Steel Built by Laser Melting Deposition
摘要： In this paper low-alloy steel samples were fabricated by laser melting deposition at different laser power of 1500 W, 2000 W and 2500 W. The results show that the microstructure is gradient with a mixture of lower bainite and martensite on surface and tempered martensite in interior of each sample, and the morphology of microstructure both on surface and in interior develop with change of laser power, the develop of microstructures result in difference in mechanical properties. The hardness, ultimate tensile strength and plasticity of both surface and interior of the samples were studied, as well as the depth of the surface layer. This paper provides a reference for the evolution and control of gradient microstructure of LMD low-alloy samples.
关键词： multilayer structure,low-alloy steel,laser power,microstructure,deposition
更新于2025-09-11 14:15:04