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Narrow bandgap difluorobenzochalcogenadiazole-based polymers for high-performance organic thin-film transistors and polymer solar cells
摘要： A bithiophene donor unit, 3-alkoxy-3’-alkyl-bithiophene (TRTOR), was copolymerized with difluorobenzochalcogenadiazole (ffBZ) containing different heteroatoms on their diazole structure to afford a series of PffBZ copolymers (where Z = X, T, Se) with narrow optical bandgaps in the range of 1.34-1.47 eV. The effects of ffBZ heteroatoms (O, S, and Se) on the optical properties, electrochemical characteristics and film morphologies of polymers as well as device performance were fully investigated. The results revealed that the highest occupied molecular orbitals (HOMOs) of polymers are gradually elevated accompanied by increased material solubility in common organic solvents as the size of heteroatoms increases. The PffBZ copolymers exhibit substantial hole mobility of 0.08-1.6 cm2 V-1 s-1 in organic thin-film transistors (OTFTs). The PffBX, PffBT, and PffBSe-based polymers exhibit maximum power conversion efficiencies (PCEs) of 5.47%, 10.12%, and 3.65%, respectively in polymer solar cells (PSCs). For PffBZ copolymers, the alkyl chain exerts a great influence on the morphology of the polymer:PC71BM blend films and hence affect PCEs in PSCs. It was found that the performing of polymers branching on the 2nd position for alkyl chain and the 3rd position for alkoxy chain were the best among PffBT and PffBSe-based polymers, and it is different from the tetrathiophene-based benchmark polymer branching on the 2nd position of the alkyl chain. X-ray diffraction revealed that all PffBZ-based polymers has obvious a face-on dominated orientation, and that chalcogen atom and branched position on alkoxy chain have a great influence on the morphologies of neat and blend films. The above results indicated that the branching positions and chalcogen atoms should be carefully optimized to maximize performance.
关键词： polymer solar cells,high-performance,difluorobenzochalcogenadiazole,organic thin-film transistors,narrow bandgap
更新于2025-09-23 15:19:57
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High performance n-type vertical organic phototransistors
摘要： In this manuscript, a solution-processed n-type organic phototransistor based on vertical structure thin-film transistors was proposed. Due to the vertical structure and short channel length (≈130 nm), the transistors exhibited excellent current density (15.4 mA/cm2) with high Ion/Ioff ratio (up to 105). On account of this structure, the face-on π-π stacking of P(NDI2OD-T2) was aligned with the charge transport direction, which facilitated charge transfer from source to drain electrode. Moreover, n-type organic phototransistors based on vertical thin-film transistors were demonstrated for the first time, in which the active layer was protected by the source-drain electrodes, resulting in the improvement of the stability of the device. Due to the nanoscale channel, efficient separation of electron-hole pairs and quick charge transfer can be achieved. Hence, high-performance n-type phototransistor was obtained with responsivity of 34.8 A/W, photosensitivity of 4.78×104, detectivity of 3.95×1013 Jones and external quantum efficiency up to 1.1×104 % under 400 nm illumination with a light intensity of 200 μW cm-2, which was much better than those reported n-type organic phototransistors. This work provided a strategy for the fabrication of high performance n-type organic phototransistor, which paved the way for its future application in the next-generation organic optoelectronics.
关键词： n-type organic semiconductor,Organic phototransistors,Vertical structure,Organic thin-film transistors
更新于2025-09-19 17:15:36
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Facile synthesis of a semiconducting bithiophene-azine polymer and its application for organic thin film transistors and organic photovoltaics
摘要： A new azine polymer poly(4,40-didodecyl-2,20-bithiophene-azine) (PDDBTA) was synthesized in only three steps. PDDBTA showed hole mobilities of up to 4.1 (cid:2) 10(cid:3)2 cm2 V(cid:3)1 s(cid:3)1 in organic thin ?lm transistors (OTFTs) as a p-channel material. As a donor in organic photovoltaics (OPVs), power conversion e?ciencies (PCEs) of up to 2.18% were achieved, which is the ?rst example of using an azine-based polymer for OPVs. These preliminary results demonstrate the potential of bithiophene-azine polymers as a new type of low-cost semiconductor material for OPVs and other organic electronics.
关键词： azine polymer,semiconductor material,organic photovoltaics,organic thin film transistors
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Evaluating the Electricity Production and Energy Saving from Transparent Photovoltaics for Windows in Commercial Buildings
摘要： A pentacene (C22H14)-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current–voltage (I–V ) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V < VG < 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I–V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I–V can be modeled with the existing Si-based FET models.
关键词： Flexible substrates,high-κ gate dielectrics,organic thin-film transistors (HVTFTs),high-voltage semiconductors
更新于2025-09-19 17:13:59
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High-Performance Ambient-Condition-Processed Polymer Solar Cells and Organic Thin-Film Transistors
摘要： Large-scale commercial synthesis of bulk-heterojunction (BHJ) solar cell materials is very challenging and both time and energy consuming. Synthesis of π-conjugated polymers (CPs) with uniform batch-to-batch molecular weight and low dispersity is a key requirement for better reproducibility of high-efficiency polymer solar cells. Herein, a conjugated polymer (CP) PTB7-Th, well known for its high performance, has been synthesized with high molecular weight and low dispersity in a closed microwave reactor. The microwave reaction procedure is known to be more controlled and consumes less energy. The precursors were strategically reacted for different reaction time durations to obtain the optimum molecular weight. All different CPs were well characterized using 1H NMR, gel permeation chromatography (GPC), UV?vis, photoluminescence (PL), electron spin resonance (ESR), and Raman spectroscopy, whereas the film morphology was extensively studied via atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXRD) techniques. The effect of molecular weight on a conventional BHJ solar cell with PC71BM acceptor was investigated to derive systematic structure?property relationships. The CP obtained after 35 min of reaction time and integrated into BHJ devices under ambient conditions provided the best performance with a power conversion efficiency (PCE) of 8.09%, which was quite similar to the results of CPs synthesized via a thermal route. An enhanced PCE of 8.47% was obtained for the optimized polymer (35 min microwave reaction product) when device fabrication was carried out inside a glovebox. The organic thin-film transistor (OTFT) device with the microwave-synthesized CP displayed better hole mobility (0.137 cm2 V?1 s?1) as compared to that with the thermally synthesized CP. This study also proved that the device stability and reproducibility of the microwave-synthesized CP were much better and more consistent than those of the thermally developed CP.
关键词： microwave reactor,π-conjugated polymers,organic thin-film transistors,polymer solar cells,bulk-heterojunction
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Is Damp Heat Degradation of c-Si Modules Essentially Universal?
摘要： A pentacene (C22H14)-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current–voltage (I–V ) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V < VG < 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I–V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I–V can be modeled with the existing Si-based FET models.
关键词： Flexible substrates,high-κ gate dielectrics,organic thin-film transistors (HVTFTs),high-voltage semiconductors
更新于2025-09-16 10:30:52
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Effect of space charge limited current on performance of organic field-effect transistors
摘要： The crucial parameter that determines the performance of a semiconductor material in organic field-effect transistors (OFETs) is the charge carrier mobility. The conventional method of its determination based on Shockley’s equations can lead to incorrect mobility evaluation due to contact effects. Particularly, in the common staggered OFET architecture (top-contact bottom-gate or bottom-contact top-gate), the space-charge limited current (SCLC) effect in the active layer under/above the source and drain contacts decreases the source-drain current. In this work, we model the effect of SCLC under/above the source and drain electrodes on the OFET apparent mobility (i.e., calculated from the device characteristics) and apparent threshold voltage for different active layer thickness and intrinsic mobility anisotropy. For the saturation regime, we derived simple analytical expressions for transfer characteristics and apparent mobility. Our modeling shows that the apparent OFET mobility is more than five times lower than the intrinsic one for the active layer thicker than 100 nm with mobility anisotropy (along vs across the active layer) higher than 100. While the SCLC effect does not change the apparent threshold voltage, it reveals itself as a kink at near zero voltage in the output characteristics. The proposed model gives analytical expressions for the transfer characteristics and apparent mobility as explicit functions of the intrinsic mobility and the device parameters in the saturation regime and as implicit functions in the linear regime. Our findings provide guidelines for accurate evaluation of the intrinsic mobility in OFETs fabricated in the staggered architecture and for further improvement of OFET performance.
关键词： Organic field-effect transistors,Organic thin-film transistors,Space charge limited current,Contact effects,Modeling
更新于2025-09-11 14:15:04
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High performance phototransistors with organic/quantum dot composite materials channels
摘要： Nanomaterials, especially quantum dots, have become one of the most great potential channel transport layer materials in the field of photo detection mainly due to their particular light absorption characteristics. However, there are still many disadvantages such as low carrier transport capability possibly attributable to the discontinuity nature of materials. Therefore, particular phototransistors with pentacene/CdSe@ZnS QDs composite materials channels have been prepared by simply blending and spin-coating 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) and QDs solution in weight ratio of 3:1. The particular device architecture with organic/quantum dot composite materials channels effectively combined the high carrier mobility advantage of organic semiconductors with the strong absorption characteristic of quantum dots in specific optical band regions and further overcame the low conductivity shortcomings of pure quantum dot materials. The device with particular pentacene/CdSe@ZnS QDs composite channel exhibited excellent electrical and optical properties with current switch ratio Ion/off of 104, carriers mobility of ~0.161 cm2/V, photosensitivity P of 105, responsivity R of 0.33 mA/W and detectivity D of 1.48 ? 1011 Jones at drain voltage of (cid:0) 35 V and light intensity of 1.6 mW/cm2, respectively, indicating that this composite, as one of the most promising channel transport layer material candidates for photodetector, provides one chance to improve the characteristic of photodetector transistors just by using hybrid channel technology.
关键词： Solution method,Quantum dots,Photodetectors,Composite materials,Organic thin film transistors
更新于2025-09-11 14:15:04
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Uniform Insulating Properties of Low-Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic Substrate
摘要： Achieving a high-resolution display on a plastic substrate requires a to ensure dimensional stability during fabrication process, including the deposition of gate dielectrics. Evaluation platform to confirm the uniform insulating properties of organic dielectric material prior to actual application to organic thin-film transistor (OTFT) arrays was proposed. This test method enabled verification of the suitability of the low-temperature curable dielectric and chemical resistance during fabrication process. A cross-linked poly(hydroxy imide) (PHI) that can be cured at a low temperature of 130°C exhibited stable insulating properties in a large area that sudden breakdown was not observed in an electric field up to 4 MV/cm. Thiophene-thiazole-based copolymer semiconductor was used as an active layer and inkjet-printed. In all the processes, the temperature of the substrate was kept below 130°C, and 4.8-inch electrophoretic display panels on a polyethylene naphthalate (PEN) substrate with a resolution of 98 dpi was demonstrated.
关键词： Organic thin-film transistors,Organic gate dielectric,Plastic substrates,Low-temperature process,Polymer semiconductor,Flexible displays,Inkjet printing
更新于2025-09-10 09:29:36
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Imide‐Functionalized Polymer Semiconductors
摘要： Imide-functionalized p-conjugated polymer semiconductors have received a great deal of interest owing to their unique physicochemical properties and optoelectronic characteristics, including excellent solubility, highly planar backbones, widely tunable band gaps and energy levels of frontier molecular orbitals, and good film morphology. The organic electronics community has witnessed rapid expansion of the materials library and remarkable improvement in device performance recently. This review summarizes the development of imide-functionalized polymer semiconductors as well as their device performance in organic thin-film transistors and polymer solar cells, mainly achieved in the past three years. The materials mainly cover naphthalene diimide, perylene diimide, and bithiophene imide, and other imide-based polymer semiconductors are also discussed. The perspective offers our insights for developing new imide-functionalized building blocks and polymer semiconductors with optimized optoelectronic properties. We hope that this review will generate more research interest in the community to realize further improved device performance by developing new imide-functionalized polymer semiconductors.
关键词： organic thin-film transistors,imide-functionalized polymers,organic semiconductors,solar cells
更新于2025-09-04 15:30:14