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Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer
摘要： The ZnO/Si heterojunction diode can be integrated with the Si process, which has attracted great attention in recent years. However, the large number of interface states at the ZnO/Si heterojunction interface could adversely affect its optoelectronic properties. Here, n-type ZnO thin film was deposited on p-Si substrate for formation of an n-ZnO/p-Si heterojunction substrate. To passivate the ZnO/Si interface, a thin CuI film interface passivation layer was inserted at the ZnO/p-Si heterojunction interface. Electrical characterization such as I–V and C–V characteristic curves confirmed the significant improvement of the heterojunction properties e.g. enhancement of forward current injection, reduction of reverse current and improvement of the rectification ratio. These results showed that the passivation of interface is critical for ZnO/Si heterojunctions.
关键词： CuI,heterojunction,interface states,electrical properties,ZnO/p-Si
更新于2025-09-23 15:23:52
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Visible light driven TaON/V2O5 heterojunction photocatalyst for deep elimination of volatile-aromatic compounds
摘要： E?ciently separating carriers is the major challenge for degrading stable volatile-aromatic compounds by photocatalysis. Here, we propose using TaON to modify V2O5 to construct heterojunction for improving the charge separation e?ciency. The 5 wt% TaON/V2O5 exhibited the optimal photocatalytic activity in degradation of toluene, reaching to 40% mineralization ratio after 30 h irradiation, which was 2.1 and 1.5 times higher than TaON and V2O5, respectively. The enhanced photocatalytic activity was mainly ascribed to the improved separation e?ciency of carriers by the interface electric ?eld of heterojunction. The mass spectrum and electron paramagnetic resonance analyses distinctly demonstrated that the toluene was ?rst oxidized by OH to generate cyclohexane-1,2,3,4,5,6-hexaol. Then, it reacted with O2? and h+ to change into xylose and methoxyacetaldehyde until they were mineralized to CO2.
关键词： TaON/V2O5 heterojunction,Pollutant elimination,Volatile-aromatic compounds,Photocatalysis
更新于2025-09-23 15:23:52
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Enhanced photo-catalytic performance by effective electron-hole separation for MoS2 inlaying in g-C3N4 hetero-junction
摘要： The MoS2/g-C3N4 heterojunction composite (marked as MoS2/g-C3N4-H) was successfully prepared via calcining the melamine coated MoS2 nano-sphere, where the thin g-C3N4 nano-sheets were tightly grown on the surface of MoS2 nano-sphere to form MoS2 inlaying in g-C3N4 heterostructure. The detailed charge transfer mechanism was discussed by combining theoretical calculation and experiments, in which the intrinsic cause of photo-generated charge separation and transfer was determined as the directional built-in electric field driven by different Fermi levels of MoS2 and g-C3N4. Comparatively, the enhanced photo-catalytic performance and stability of the sample were assessed by degrading the Rhodamine (RhB) and reducing the Dichromate (Cr6+) solutions under the irradiation of the simulated sunlight, which could be attributed to the widened spectral absorption range and improved electron-hole separation rate. Based on above results, the photo-catalytic mechanism involving redox reactions was also clearly proposed.
关键词： MoS2,Built-in electric field,Photocatalyst,Heterojunction,g-C3N4
更新于2025-09-23 15:23:52
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Self-hybridized coralloid graphitic carbon nitride deriving from deep eutectic solvent as effective visible light photocatalysts
摘要： The room temperature deep eutectic solvent (DES) is demonstrated as an ideal precursor to prepare self-hybridized graphitic carbon nitride (g-C3N4) for the first time, for its special components, randomly reorganized molecules and extensive hydrogen bonds. In this work, by adjusting the proportion of urea and ammonium thiocyanate in the precursor DES, the self-hybridized coralloid g-C3N4, stacked by a mass of double-layer g-C3N4/g-C3N4 nanocages, were prepared without any templates. Compared to conventional g-C3N4 prepared using melamine, urea and AT as precursors, the improved charge transfer between the interfaces of the self-hybridized g-C3N4 has been demonstrated, which is attributed to the well-matched electronic band structures of the two g-C3N4 species, the abundant 2D/2D interfacial contact and increased photocatalytic active sites. As expected, it exhibits highly enhanced photocatalytic activity, which is among the best g-C3N4 photocatalysts without doping any other elements.
关键词： G-C3N4/g-C3N4 heterojunction,Graphitic carbon nitride,Photocatalysis,Nanocages,Deep eutectic solvents
更新于2025-09-23 15:23:52
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New modeling method for UV sensor photoelectrical parameters extraction
摘要： In this work, we have developed a new modeling tools based on physical, mathematical and numerical models for the analysis of UV-photodetectors based on ZnO NRs/PPV-C6 hybrid heterojunctions. The photoelectrical equivalent circuit parameters are the series resistance (Rs), the shunt resistance (Rp), the reverse current density (J0), the ideality factor (n) and the photocurrent density (Jph). A combined physical-mathematical-numerical approach based on the modified Schockley model, the Lambert W function and the optimized method of the Root Mean Square error (RMSE) was applied to analyze the different devices performances. The results demonstrate that the incorporation of PPV-C6 polymer to the ZnO NRs structure leads to significant amelioration in the interface and increase of both the Jph and responsivity with a decrease of the Rs. This kind of hybrid heterojunction based UV light sensor is promising for future low cost and high performance optoelectronic devices development.
关键词： Photodetectors,Hybrid heterojunction,UV sensor,Modeling,Photoelectrical properties
更新于2025-09-23 15:23:52
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Enhanced visible light photocatalytic activity of BiFeO3-ZnO p-n heterojunction for CO2 reduction
摘要： The visible light photocatalytic ability of bismuth ferrite-zinc oxide composites with different molar ratios was investigated for conversion of CO2 in the gas phase. The catalysts were successfully synthesized by hydrothermal method, and characterized by XRD, EDS, FESEM, UV–vis, and PL analyses. Also, the gaseous products were identified by FTIR technique. The FESEM illustrated the well crystalline particles of ZnO and BiFeO3. The UV–vis and PL analyses revealed that by increasing BiFeO3 content, the composites showed higher optical response in visible region and higher efficiency of charge separation, respectively. Compared with the pure ZnO and BiFeO3, which had poor performances under visible light irradiation, the as-synthesized photocatalysts showed the enhanced visible light photocatalytic activity for CO2 reduction. The highest photocatalytic conversion of CO2, 21%, was achieved by the as-synthesized photocatalyst with molar ratio of 1:1 under visible light. The enhanced visible light photocatalytic activity of BiFeO3-ZnO was assigned to the synergistic effect of p-n heterojunction and visible light sensitive property of perovskite structure of BiFeO3.
关键词： Perovskite,P-n heterojunction,Gaseous phase,Photocatalyst,CO2 reduction
更新于2025-09-23 15:23:52
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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology
摘要： We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by common-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >7.4dB at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm ╳0.9 mm.
关键词： thin-film microstrip (TFM),Indium phosphide (InP),H-band,Amplifier,Heterojunction bipolar transistors (HBTs),Terahertz monolithic integrated circuit (TMIC)
更新于2025-09-23 15:22:29
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MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection
摘要： In this letter, we demonstrate a novel junction field effect transistor (JFET) by transferring MoS2 onto silicon-on-insulator (SOI) substrate to control the thin Si channel. By combining high light absorption coefficient in MoS2 with high internal gain in thin Si channel, the device can be used for photodetection and achieve high responsivity up to ~1.78×104 A/W, high detectivity over 3×1013 Jones, and short response time down to 1.44 ms. Furthermore, unlike conventional SOI photodetector which is only sensitive to UV light, the response spectrum of our proposed device peaks in visible/near-infrared region, which is interesting for imaging and optical communication applications.
关键词： SOI,High photoresponsivity,Van der Waals heterojunction,MoS2,Junction field effect transistor
更新于2025-09-23 15:22:29
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Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions
摘要： Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.
关键词： porous silicon,heterojunction,anodization,electrochemical deposition
更新于2025-09-23 15:22:29
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Preparation of radial ZnSe-CdS nano-heterojunctions through atomic layer deposition method and their optoelectronic applications
摘要： Radial 1-D nano-heterojunctions have distinct optoelectronic properties. However, their complex fabrication process is still the bottleneck of device applications. Herein, a facile atomic layer deposition (ALD) method was used to coat a polycrystalline CdS thin film with high uniformity and controllable thickness on the surface of the as-synthesized p-type ZnSe nanowires, for fabricating radial 1-D ZnSe-CdS nano-heterojunctions. The nano-heterojunctions exhibited excellent optoelectronic properties. Under blue/violet light, the nano-heterojunctions obtained a response radio of ~5 × 10^3, a responsitivity of ~1.43 A/W, a gain of ~3.78 and a detectivity of ~0.57 × 10^12 cmHz^{1/2}W^{-1} at zero bias. Furthermore, the nano-heterojunction also showed obvious photovoltaic characteristic with a power conversion efficiency of ~0.96%. This method is expected to play an important role in nano-heterojunction construction and their device applications.
关键词： ZnSe,CdS,Photovoltaic,Nano-heterojunction,Atomic layer deposition,Photodetector
更新于2025-09-23 15:22:29