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Physical and electrical properties of nitrogen-doped hydrogenated amorphous carbon films
摘要： Nitrogen-doped hydrogenated amorphous carbon films (a-C:H:N) have been prepared by a plasma-activated chemical vapor deposition technique (PACVD) by using a plasma beam source (PBS). The properties of the a-C:H:N films were changed by varying the total pressure, the substrate temperature (100 °C, 300 °C) and nitrogen partial pressure p(N2) by adding nitrogen to the precursor acetylene (C2H2). For the investigations, a-C:H:N films have been deposited onto glass slides and doped silicon wafers. The deposition rate decreased with increasing nitrogen content in the N2/C2H2 gas mixture and with decreasing total pressure. The elemental composition of two sample series (300 °C) has been analyzed with Elastic Recoil Detection Analysis (ERDA). The highest N content and N/C ratio was estimated to be 16 at.% and 0.25 at the highest p(N2), respectively. Microhardness measurements showed that the hardness decreased with increasing p(N2). Electrical resistance of the a-C:H:N films was measured by 4-point probe. Electrically conductive coatings have been obtained by nitrogen-doped a-C:H films at higher substrate temperature (300 °C). The electrical resistance of the a-C:H:N films also decreases with decreasing total pressure, with the lowest value being about 1 Ohm cm. The film density was determined by means of X-ray reflectometry (XRR).
关键词： PACVD,carbon nitride films,electrical conductivity,DLC,carbon films,XRR
更新于2025-09-23 15:22:29
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Effect of substrate bias and substrate/plasma generator distance on properties of a-C:H:SiOx films synthesized by PACVD
摘要： In this paper the a-C:H:SiOx films were synthesized on silicon (100) and glass substrates by plasma-assisted chemical vapor deposition combined with pulsed bipolar substrate bias from mixtures of argon and polyphenylmethylsiloxane vapor. The process of a-C:H:SiOx films formation was investigated by controlling processing conditions such as amplitude of negative pulse of substrate bias and the distance between the substrate and plasma generator. Physico-mechanical characteristics of a-C:H:SiOx films were studied by the nanoindentation technique, atomic force microscopy, Fourier transform infrared and Raman spectroscopy. The contact angle and surface free energy were determined by the sessile drop method using couple liquids (water and glycerin). It was found that the films’ properties are interrelated with the density of the ion current on the substrate, which was measured using a guarded planar probe. The obtained results show that film prepared at the smaller substrate/plasma generator distance and optimal substrate biasing has a higher content of sp3 bonded carbon and, accordingly, has higher hardness, Young's modulus and resistance to plastic deformation. At the same time the a-C:H:SiOx films show large hydrophobicity with a contact angle for water of about 91° and small total surface free energy of about 17.9 mN/m.
关键词： a-C:H:SiOx films,PACVD,Raman Spectroscopy,Substrate bias,Fourier Transform Infrared Spectroscopy,Wettability
更新于2025-09-23 15:21:21
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Effect of precursor flow rate on physical and mechanical properties of a-C:H:SiO <sub/><i>x</i> </sub> films deposited by PACVD method
摘要： In this paper the deposition of a-C:H:SiOx films by plasma activated chemical vapour deposition in a mixture of argon and polyphenylmethylsiloxane (PPMS) vapor with the impulse bipolar bias voltage applied to the substrate is presented. The paper discusses the dependence of the physico-mechanical properties of the deposited films on the flow rate of the PPMS precursor. The structure of the deposited films was determined by Fourier transform infrared spectroscopy and Raman spectroscopy. Mechanical properties characterization of a-C:H:SiOx films (hardness and elastic modulus) was made using the nanoindentation method. Hardness and elastic modulus were used to evaluate the endurance capability (H/E) and resistance to plastic deformation (H3/E2). The elastic recovery was calculated based on loading and unloading curves. It is shown that with an increase in the PPMS flow rate in the range of 35-287 μl/min, the films deposition rate increases from 17 to 221 nm/min. At this films mechanical properties, such as hardness, elastic modulus and elastic recovery did not deteriorate. The maximum values of the endurance capability and resistance to plastic deformation are obtained at a flow rate of 175 μl/min and equal to 0.12 and 203 MPa, respectively.
关键词： PPMS,a-C:H:SiOx films,PACVD,mechanical properties,nanoindentation
更新于2025-09-09 09:28:46