- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Direct Synthesis of a Self‐Assembled WSe <sub/>2</sub> /MoS <sub/>2</sub> Heterostructure Array and its Optoelectrical Properties
摘要： Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p–n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W?1 and response speed of 16 μs. As a feasible application, a WSe2/MoS2-based photodiode array (10 × 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.
关键词： transition-metal dichalcogenides,p–n junctions,Marangoni flow,photodetectors,heterojunctions
更新于2025-09-11 14:15:04
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Ultracompact Camera Pixel with Integrated Plasmonic Color Filters
摘要： Photodetector size imposes a fundamental limit on the amount of information that can be recorded by an image sensor. Compact, high-resolution sensors are generally preferred for portable electronic devices such as mobile phones and digital cameras, and as a result, a significant effort has been invested in improving the image quality provided by small-area image sensors. Reducing photodetector size, however, still faces challenges in implementation requiring improvements in current technology to meet the demand for ultracompact imaging systems such as cameras. An issue with a decrease in size is associated with photodetectors utilizing color filters. In most commonly used camera designs these filters are made of dyes or pigments and incompatible with the complementary metal-oxide-semiconductor fabrication process. They are, therefore, fabricated in two different technological processes and require subsequent alignment. As the pixel size decreases, the alignment of these layers becomes challenging. Furthermore, dye-based filters need to have a thickness of the order of micrometers to ensure sufficient absorption. Here a compact, low-cost color sensor is proposed and experimentally demonstrated utilizing monolithically integrated plasmonic antennas that have a nanoscale thickness and are fabricated in the same technological process with photodetector matrix.
关键词： CMOS,planar technology,pixel,plasmonics,photodetectors
更新于2025-09-11 14:15:04
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Ultrahighly Enhanced Performance of Single Cadmium Selenide Nanobelt by Plasmonic Gold Particles
摘要： Noble metal nanoparticles have been demonstrated by a huge application prospect for photodetector (PD) due to their unique and tunable optical properties. Herein, a simple strategy is presented by a combination of gold nanoparticles (Au NPs) and broadband photoresponse cadmium selenide nanobelts (CdSe NBs) to get ultrasensitive, broadband photoresponse (300–720 nm) and tunable photoresponse PD. Concretely, the Au NPs are fabricated on CdSe NBs via ion sputtering and annealing, and the morphology of Au NPs is systematically adjusted by simply tuning the sputter time from 60 to 140 s. Compared with the pure CdSe NB PD, the Au NPs hybrid CdSe NB PD exhibits a high responsivity, especially in the range of 525–575 nm with low light intensity (enhancement of (cid:3)2). The response time of the hybrid PD is (cid:1)2894% at 550 nm with 79.6 μW cm decreased substantially from 0.8 to 0.2 ms. More importantly, the hybrid PD possesses a tunable absorption in the range of 538–580 nm, which is bene?ted from tunable plasmon resonance of Au NPs. These results are con?rmed by the theoretical simulation. It is believed that this strategy offers new opportunities to design ultrasensitive, broadband spectra, and tunable wavelength PD.
关键词： cadmium selenide nanobelts,photodetectors,the discrete dipole approximation,surface plasmon resonances
更新于2025-09-11 14:15:04
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InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300?K
摘要： Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1–3 μm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 μm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick inxAl1?xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5–4 μm and its detectivity (D*) was 1.65 × 108 cm · Hz1/2 · W?1 at 3.3 μm. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.
关键词： InxAl1?xAs graded buffer,InAs p-i-n photodetector,GaAs substrate,room temperature operation,Short-wave infrared (SWIR),InGaAs photodetectors
更新于2025-09-11 14:15:04
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Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors
摘要： As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi2Te3/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi2Te3/organics thin film can reach 2.56, which proves that Bi2Te3 can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405?3500 nm). The highest responsivity (Ri) of the device can still reach 1.93 AW?1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.
关键词： polarization resolved,inorganics/organics heterojunction,photodetector,Bi2Te3 thin film,MWIR photodetectors
更新于2025-09-11 14:15:04
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Recent advances in flexible photodetectors based on 1D nanostructures
摘要： Semiconductor nanowires have demonstrated excellent electronic and optoelectronic properties. When integrated into photodetectors, excellent device performance can be easily attained. Apart from the exceptional performance, these nanowires can also enable robust and mechanically flexible photodetectors for various advanced utilizations that the rigid counterparts cannot perform. These unique applications include personal healthcare, next-generation robotics and many others. In this review, we would first discuss the nanowire fabrication techniques as well as the assembly methods of constructing large-scale nanowire arrays. Then, the recent development of flexible photodetectors based on these different nanowire material systems is evaluated in detail. At the same time, we also introduce some recent advancement that allows individual photodetectors to integrate into a more complex system for advanced deployment. Finally, a short conclusion and outlook of challenges faced in the future of the community is presented.
关键词： photodetectors,flexible,nanowires
更新于2025-09-11 14:15:04
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Self‐Powered Photodetectors Based on 2D Materials
摘要： Self-powered photodetectors are considered as a new type of photodetectors enabling self-powered photodetection without external power. The excellent photoresponsivity, fast photoresponse rate, low dark current, and large light on/off ratio of these photodetectors have attracted wide interest among scholars. 2D materials are widely used in self-powered photodetectors due to their excellent optical and electrical properties, unique 2D structures, and their capabilities to exhibit excellent photodetection performance. According to the self-driving mechanism of 2D material-based self-powered photodetectors, they are divided into three categories: p–n junction photodetectors, Schottky junction photodetectors, and photoelectrochemical photodetectors. From these three perspectives, the research progress of 2D material-based self-powered photodetectors is summarized in detail here. Research reports indicate that 2D material-based self-powered photodetectors have excellent self-powered photoresponse behavior, good light on/off characteristics, and wideband spectral response ranges. The excellent photoresponse performance of 2D material-based self-powered photodetectors facilitates their potential applications in the field of optoelectronic devices. In particular, self-powered photodetectors have great potential as novel emerging self-driven optoelectronic devices. Finally, directions for the further development of 2D material-based self-powered photodetectors are anticipated.
关键词： self-powered devices,photodetectors,2D materials
更新于2025-09-11 14:15:04
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Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga <sub/>2</sub> O <sub/>3</sub> Nanowires for DUV Photodetector and Image Sensor Application
摘要： Photodetection in the solar-blind deep-ultraviolet (DUV) regime (200–280 nm) has received significant attention for its many critical applications in military and civil areas. In this study, a vapor–solid synthesis technique for catalyst-free growth of single-crystalline β-Ga2O3 nanowires is developed. A photodetector made of the nanowires is highly sensitive to 265 nm DUV illumination with excellent photoresponse performance. The performance parameters including Ilight/Idark ratio, responsivity, specific detectivity and response speed can attain ≈103, ≈233 A W?1, ≈8.16 × 1012 Jones, and 0.48/0.04 s, respectively. Additionally, the detector has an abrupt response cutoff wavelength at ≈290 nm with a reasonable DUV/visible (250–405 nm) rejection ratio exceeding 102. It is also found that the device can operate properly at a large applied bias of 200 V with the responsivity being enhanced to as high as ≈1680 A W?1. Moreover, such a nanowires-based photodetector can function as a DUV light image sensor with a reasonable spatial resolution. Holding the above advantages, the present DUV photodetector based on catalyst-free grown β-Ga2O3 nanowires possesses huge possibility for application in future DUV optoelectronics.
关键词： DUV photodetectors,catalyst-free growth,nanowires,image sensors,β-Ga2O3
更新于2025-09-11 14:15:04
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Rolling up MoSe <sub/>2</sub> Nanomembranes as a Sensitive Tubular Photodetector
摘要： Transition metal dichalcogenides, as a kind of 2D material, are suitable for near-infrared to visible photodetection owing to the bandgaps ranging from 1.0 to 2.0 eV. However, limited light absorption restricts photoresponsivity due to the ultrathin thickness of 2D materials. 3D tubular structures offer a solution to solve the problem because of the light trapping effect which can enhance optical absorption. In this work, thanks to mechanical flexibility of 2D materials, self-rolled-up technology is applied to build up a 3D tubular structure and a tubular photodetector is realized based on the rolled-up molybdenum diselenide microtube. The tubular device is shown to present one order higher photosensitivity compared with planar counterparts. Enhanced optical absorption arising from the multiple reflections inside the tube is the main reason for the increased photocurrent. This tubular device offers a new design for increasing the efficiency of transition metal dichalcogenide–based photodetection and could hold great potential in the field of 3D optoelectronics.
关键词： rolling-up,photosensitivity,tubular photodetectors,MoSe2
更新于2025-09-11 14:15:04
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Highly Sensitive, Fast Response Perovskite Photodetectors Demonstrated in Weak Light Detection Circuit and Visible Light Communication System
摘要： Organic–inorganic hybrid perovskite (OIHP) photodetectors have presented unprecedented device performance mainly owing to outstanding material properties. However, the solution-processed OIHP polycrystalline thin films with defective surface and grain boundaries always impair the key parameter of photodetectors. Herein, a nonfullerene passivation layer exhibits more efficient passivation for OIHP materials to dramatically reduce the trap density of state, yielding a dark current as low as 2.6 × 10?8 A cm ?2 under ?0.1 V. In addition, the strong absorption in near-infrared (NIR) region of nonfullerene/C60 heterojunction broadens the detectable range to over 900 nm by effective charge transport, ultimately leading to a specific detectivity of 1.45 × 1012 and 7.37 × 1011 cm Hz1/2 W?1 at 650 and 820 nm, respectively. Encouragingly, the response speed of 27 ns is obtained at 0.6 mm2 of device area by removing constrain from the resistance–capacitance constant. Moreover, the prominent practical application of the photodetector is demonstrated in a weak light detection circuit and a visible light communication system. It is believed that the OIHP photodetectors with high sensitivity, NIR photoresponse, and ultrafast speed would pave the way to commercial applications.
关键词： weak light detection circuit,perovskite photodetectors,fast response,visible light communication,highly sensitive
更新于2025-09-11 14:15:04