- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates
摘要： A comprehensive study of the bulk ~400 μm thick GaN samples, grown by HVPE technology on AT-GaN seeds, and containing different carbon doping is reported. Spectroscopy of point centres has been implemented by combining several contactless/optical techniques: time resolved photoluminescence (TR-PL), microwave probed photoconductivity (MW-PC) transient and pulsed-photo-ionization spectroscopy (PPIS) techniques, together with steady-state PL (SS-PL) and transmission spectral measurements. The dynamics of the non-radiative and radiative recombination dependent on the excess carrier density and incorporated carbon concentration has been revealed. The cross-section of the photon-electron interaction and broadening factors due to electron-phonon coupling have been evaluated for various centres. Profiling of the excess carrier decay transients by scanning a wafer-edge boundary has been employed for estimation of surface recombination velocity. The asymmetry of surface recombination in heavily carbon doped samples has been corroborated by SS-PL intensity changes when comparing spectra recorded by exciting the opposite wafer surfaces using UV light. It has been inferred that the surface and bulk non-radiative recombination with 70 ns carrier lifetime is efficient only within initial stages of MW-PC and TR-PL transients. Several traps, tentatively attributed to CNON, CN, CI, VGa point defects, have been deduced from pulsed photo-ionization spectroscopy. The CN defect appeared to be the most efficient in redistribution of the radiative recombination. For these centres, the parameters such as the photon-electron interaction cross-section, broadening factor due to electron-phonon coupling, and concentration have been evaluated for GaN samples, carbon doped with different levels. The CNVGa, CICGa, CGaVN complexes have also been implied by considering TR-PL and SS-PL spectra. The conversion from absorption to emission spectra has been revealed and explained based on van Roosbroeck-Shockley approach. The long-tail photoluminescence decay with durations up to tens of ms has been explained by nearly resonant photo-ionization and photoluminescence transitions in sequence of self-sustaining processes when local excitation travels by hopping over the re-absorption lengths.
关键词： Photo-ionization spectroscopy,Microwave probed photoconductivity transients,Photoluminescence spectroscopy,Carbon doped HVPE GaN,Surface recombination
更新于2025-09-04 15:30:14
-
-related Materials
摘要： Dominant recombination paths in AlN and AlxGa1?xN-related structures are investigated using cathodoluminescence (CL) mapping measurements and photoluminescence (PL) spectroscopy. The dark spot contrasts originating from nonradiative recombination at threading dislocations (TDs), which are observed in CL intensity maps, drastically decrease upon elevating the temperature. This is because carriers can reach TDs at low temperatures (9–60 K), but are captured by point defects (PDs) even in the vicinity of TDs near RT. Calculations based on the experimental results indicate that in the current AlN and Al-rich AlxGa1?xN crystals, TDs scarcely affect the internal quantum efficiency (IQE) at RT as long as the TD density is less than 2.6 × 1010 cm?2. Because a TD density less than 2.6 × 1010 cm?2 has already been achieved even for heteroepitaxially grown AlN films on sapphire substrates, it is evident that the most effective method to further improve the IQE of AlxGa1?xN-related materials is to reduce PDs not TDs. Moreover, we clarify the existence of two types of PD states, which mainly degrade the emission efficiency, using temperature-dependent PL measurements. Combining the CL and PL results allows the activation energies of these PDs and TDs to be evaluated. Furthermore, we highlight the probability that PDs, which predominantly act as nonradiative recombination centers at room temperature, are complexes formed by Al vacancies and oxygen impurities that enhance the deep-level emissions at 3.2 and 3.5–3.7 eV near room temperature. Such a large impact of PDs on the efficiency degradation may be attributed to the high density of Al-vacancy–related PDs in AlN and Al-rich AlxGa1?xN compared with that of Ga-vacancy–related PDs in GaN due to the small formation energy.
关键词： AlxGa1?xN,cathodoluminescence,internal quantum efficiency,point defects,photoluminescence,nonradiative recombination,AlN,threading dislocations
更新于2025-09-04 15:30:14
-
Impurity-derived <i>p</i> -type conductivity in cubic boron arsenide
摘要： Cubic boron arsenide (c-BAs) exhibits an ultrahigh thermal conductivity (j) approaching 1300 Wm(cid:2)1 K(cid:2)1 at room temperature. However, c-BAs is believed to incorporate high concentrations of crystal imperfections that can both quench j and act as sources of unintentional p-type conductivity. Although this behavior has been attributed to native defects, we show here, using optical and magnetic resonance spectroscopies together with first-principles calculations, that unintentional acceptor impurities such as silicon and/or carbon are more likely candidates for causing the observed conductivity. These results also clarify that the true low-temperature bandgap of c-BAs is 0.3 eV higher than the widely reported value of (cid:3)1.5 eV. Low-temperature photoluminescence measurements of c-BAs crystals reveal impurity-related recombination processes (including donor-acceptor pair recombination), and electron paramagnetic resonance experiments show evidence for effective mass-like shallow acceptors. Our hybrid density functional calculations indicate that native defects are incapable of giving rise to such signals. Instead, we find that group-IV impurities readily incorporate on the As site and act as shallow acceptors. Such impurities can dominate the electrical properties of c-BAs, and their influence on phonon scattering must be considered when optimizing thermal conductivity.
关键词： thermal conductivity,first-principles calculations,p-type conductivity,photoluminescence,impurities,cubic boron arsenide,electron paramagnetic resonance
更新于2025-09-04 15:30:14
-
Effect of Tin and Strontium Doping on the Photocatalytic Activity of Zinc Sulphide Nanoparticles for the Photocatalytic Degradation of Resorcinol under Solar and Ultra-Violet Light
摘要： Tin (Sn) and Strontium (Sr) doped Zinc Sulphide and pure Zinc Sulphide photocatalyst have been prepared by Sol-Gel method. The prepared photocatalyst have been characterised by Thermo gravimetric Differential Thermal Analysis, Scanning Electron Microscopy, Energy Dispersive X-ray, X-Ray Diffraction, ultra-violet visible spectroscopy and photoluminescence spectroscopy. Characterization Techniques have provided information of wurtzite hexagonal structure of Zinc Sulphide. The PL spectra have shown the blue shift of Zinc Sulphide after doping it with Tin and Strontium. Photocatalytic degradation study was done by the complete degradation of an organic pollutant Resorcinol in Sun light as well as in UV-light. The factors affecting the photocatalytic activity of photocatalyst viz. pH, catalyst loading and reuse of photocatalyst have been studied along with the photocatalytic degradation of Resorcinol. These external parameters have considerable influenced on the phtocatalytic activity of Zinc Sulphide.
关键词： Photocatalyst,Pollution,Sol-gel synthesis,Doping,Zinc sulphide nanoparticles,Photoluminescence
更新于2025-09-04 15:30:14
-
Monoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H <sub/>2</sub> –CH <sub/>4</sub> – <sup> [ <i>x</i> ] </sup> SiH <sub/>4</sub> Gas Mixtures ( <i>x</i> = 28, 29, 30)
摘要： Silicon-vacancy (SiV?) color center in diamond is of high interest for applications in nanophotonics and quantum information technologies, as a single photon emitter with excellent spectral properties. To obtain spectrally identical SiV? emitters, we doped homoepitaxial diamond ?lms in situ with 28Si, 29Si, and 30Si isotopes using isotopically enriched (>99.9%) silane SiH4 gas added in H2?CH4 mixtures in the course of the microwave plasma-assisted chemical vapor deposition process. Zero-phonon line components as narrow as ～4.8 GHz were measured in both absorption and luminescence spectra for the monoisotopic SiV? ensembles with a concentration of a few parts per billion. We determined with high accuracy the Si isotopic energy shift of SiV? zero-phonon line. The SiV? emission intensity is shown to be easily controlled by the doped epi?lm thickness. Also, we identi?ed and characterized the localized single photon SiV? sources. The developed doping process opens a way to produce the SiV? emitter ensembles with energy con?ned in an extremely narrow range.
关键词： diamond,silicon-vacancy center,CVD synthesis,optical absorption,photoluminescence,doping,silicon isotope
更新于2025-09-04 15:30:14