研究目的
To obtain spectrally identical SiV? emitters by doping homoepitaxial diamond films in situ with 28Si, 29Si, and 30Si isotopes using isotopically enriched silane SiH4 gas in the microwave plasma-assisted chemical vapor deposition process.
研究成果
The study successfully demonstrated the controllable in situ doping of epitaxial diamond layers with isotopically enriched silicon to form ensembles of monoisotopic SiV? color centers with very narrow ZPL components. The method allows for the control of SiV? emission intensity through film thickness and opens a way to produce SiV? emitter ensembles with energy confined in an extremely narrow range.
研究不足
The study is limited by the need for high-temperature annealing to achieve narrow ZPL components and the challenge of controlling the area density of SiV? centers for single photon emitter applications.
1：Experimental Design and Method Selection:
The study utilized microwave plasma-assisted chemical vapor deposition (MPCVD) to grow epitaxial Si-doped diamond films. The doping was performed in situ with isotopically enriched silane SiH4 gas.
2：Sample Selection and Data Sources:
Polished (100) oriented type IIa high pressure, high temperature (HPHT) diamond plates were used as substrates.
3：List of Experimental Equipment and Materials:
The equipment included a microwave plasma chemical vapor deposition system, a high-resolution FTIR spectrometer (Bruker IFS 125 HR), and a closed-cycle He cryostat (Cryomech PT403). Materials included isotopically enriched silane SiH4 gas and CH4/H2 mixtures.
4：3). Materials included isotopically enriched silane SiH4 gas and CH4/H2 mixtures. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The substrate temperature was kept at 1100 ± 20 °C during growth. The deposited diamond films were annealed in vacuum at 1400 °C for 1 h to relax stress and narrow ZPL components.
5：Data Analysis Methods:
Optical absorption and photoluminescence spectra were measured at low temperatures (5 K) to analyze the SiV? centers.
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