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Short/mid-wave two-band type II superlattice infrared heterojunction phototransistor
摘要： We report on a short/mid-wave (SW/MW) two-band type II InAs/GaSb superlattice (SL) infrared heterojunction phototransistor (HPT). The structure consists of two back-to-back HPTs for the SW and MW detections. At 77 K, the 50% cut-off wavelength of the SW and MW HPT is 2.6 and 4.2 (cid:22)m, respectively. When the applied bias voltage is 1.2 V, the responsivity is 213 A/W and the current gain is 611 for the SW band while for the MW band, the responsivity is 45.2 A/W and the current gain is 377 at bias voltage of 1.3 V. At 1.2 V, the shot noise limited detectivity D(cid:3) of the SW channel and the MW channel is 1.9(cid:2)1011 and 1.7(cid:2)109 cm(cid:1)Hz0:5/W, respectively.
关键词： two-band detection,Heterojunction phototransistor,current gain,type II InAs/GaSb superlattice
更新于2025-09-09 09:28:46
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High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics
摘要： The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C6H5C2H4NH3)2SnI4) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization ‘‘up’’ and ‘‘down’’ states, the device achieved a high photo-switching on/off ratio (4100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W?1 and a high detectivity of 1.74 × 1012 Jones under the polarization ‘‘up’’ state with an illumination intensity of 21 mW cm?2. In addition, low temperature solution-processed P(VDF-TrFE) and (C6H5C2H4NH3)2SnI4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.
关键词： lead-free,phototransistor,two-dimensional perovskite,ferroelectric dielectrics
更新于2025-09-09 09:28:46
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High-Performance 2D MoS <sub/>2</sub> Phototransistor for Photo Logic Gate and Image Sensor
摘要： Two-dimensional (2D) MoS2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS2 phototransistor that exhibits a photoresponse in the 400?700 nm range with the maximum responsivity of over 1 × 104 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.
关键词： two-dimensional van der Waals materials,MoS2,image sensor,phototransistor,graphene contact,photoinverter
更新于2025-09-09 09:28:46