研究目的
To design and demonstrate a SW/MW two-band type II InAs/GaSb SL infrared HPT with significant current gain.
研究成果
A SW/MW two-band type II InAs/GaSb SL infrared HPT was successfully demonstrated with significant current gain. The device showed high responsivity and current gain for both SW and MW bands, with potential for further improvement in detectivity through surface passivation and structural modifications.
研究不足
The dark current noise becomes a dominant noise source at positive bias voltage, and the detectivity enhancement is challenging due to amplified noise with gain. Effective surface passivation and inserted barrier structures are suggested for improvement.
1：Experimental Design and Method Selection:
The two-band HPT is comprised of two back-to-back HPTs with a common emitter for SW and MW detections. The design includes emitter, base, and collector layers for both SW and MW HPTs.
2：Sample Selection and Data Sources:
The sample is grown on a GaSb substrate by molecular beam epitaxy and characterized by high resolution x-ray diffraction.
3：List of Experimental Equipment and Materials:
Molecular beam epitaxy for sample growth, standard photolithographic processing for mesa formation, SiO2 for passivation, and Ti/Au for Ohmic contact metal.
4：Experimental Procedures and Operational Workflow:
The device is processed into square mesas, passivated, and measured for photoresponse using a Fourier transform infrared spectrometer under front-illuminated configuration.
5：Data Analysis Methods:
The responsivity and current gain are measured by calibrating the blackbody response, and the shot noise limited detectivity is calculated.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
