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Deposition of orientation-controlled thick (K,Na)NbO<sub>3</sub> films on metal substrates by repeated hydrothermal deposition technique
摘要： (K,Na)NbO3 thick films were grown at 240°C on Ni-based metal substrates by repeated hydrothermal method. The metal substrates were covered with two types of buffer layers; SrRuO3/LaNiO3 and SrRuO3. Film thickness monotonically increased with increasing number of deposition cycles. The 27 μm-thick film was obtained on the metal substrate with SrRuO3/LaNiO3 by four cycles. The obtained films tended to show {100}c orientation and their degree of orientation increased with increasing number of deposition cycles. Films deposited on SrRuO3/LaNiO3-covered metal substrates showed more highly {100}c orientation compared with those on SrRuO3-covered metal substrates. Remnant polarization and coercive field measured at 5 kHz were 12 μC/cm2 and 70 kV/cm, while their effective values of piezoelectric coefficient (d33) was 35–40 pm/V for both films. These properties remained unchanged irrespective of a number of deposition cycles despite the orientation change of films. These results show that repeated hydrothermal deposition technique is one of the effective ways to prepare thick (K,Na)NbO3 films on metal substrates.
关键词： Metal substrate,Lead-free (K,Na)NbO3 film,Orientation control,Ferroelectric and piezoelectric properties,Hydrothermal,synthesize
更新于2025-09-12 10:27:22
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Construction of high <i>T</i> <sub/>c</sub> BiScO <sub/>3</sub> -BiFeO <sub/>3</sub> -PbTiO <sub/>3</sub> and its enhanced piezoelectric properties by sintering in oxygen atmosphere
摘要： The high-temperature piezoelectric ceramics 0.36[(1 ? x)BiScO3-xBiFeO3]-0.64PbTiO3 was constructed by introducing BiFeO3 with a high Curie temperature (Tc ～ 830 °C) in the 0.36BiScO3-0.64PbTiO3 binary system. In terms of microstructure, low-melting BiFeO3 plays a role as a sintering aid, lowering the sintering temperature of the ceramic and signi?cantly increasing the grain size. At the same time, the crystal structure shifts from the initial morphotropic phase boundary to the tetragonal phase side, and the Tc increased gradually with increasing BiFeO3 content. Under the conventional air atmosphere sintering conditions, the Tc of the sample with x = 0.3 can reach ～500 °C, and the piezoelectric constant d33 is 125 pC/N. Compared with that, the d33 of the same composition sample sintered in an oxygen atmosphere is increased to 165 pC/N, which is mainly due to the decrease in the content of oxygen vacancies that helps to increase poling electrical ?eld. Moreover, the oxygen-sintered specimen exhibits an excellent thermal stability in a wide temperature range from room temperature to 450 °C, indicating that it is a promising candidate for ultra-high-temperature piezoelectric devices applications.
关键词： high-temperature piezoelectric ceramics,thermal stability,BiScO3-BiFeO3-PbTiO3,sintering in oxygen atmosphere,piezoelectric properties
更新于2025-09-11 14:15:04
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Preparation and characterization of pyrochlore-free 0.655Pb(Mg <sub/>1/3</sub> Nb <sub/>2/3</sub> )O <sub/>3</sub> -0.345PbTiO <sub/>3</sub> piezoelectric ceramics by tape-casting process
摘要： Piezoelectric ceramics of the perovskite solid solution 0.655Pb(Mg1/3Nb2/3)O3-0.345PbTiO3 (0.655PMN-0.345PT) were synthesized by tape-casting process. Highly dense ceramics lacking parasitic pyrochlore phases were fabricated by using precursor method and adding moderate PbO. The influences from sintering temperature on the physical and electrical properties of the 0.655PMN-0.345PT ceramics were initially investigated by phase and microstructure analyses. High piezoelectric, dielectric and ferroelectric properties of d33?700 pC/N, kp?0.605, er?4770, tand ? 0.016, Pr?30.68 lC/cm2 were obtained for the specimens sintered at 1200 (cid:2)C. Compared with the traditional solid-state sintering method, the performance of ceramics formed by tape-casting achieved an improvement.
关键词： tape-casting,PMN-PT,ferroelectric properties,dielectric properties,piezoelectric properties
更新于2025-09-11 14:12:44
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Characterization of Er-doped AlN films prepared by RF magnetron sputtering
摘要： Er-doped AlN thin film were deposited on sapphire substrates (0001) by RF magnetron sputtering at different sputtering times. The crystalline structure, surface morphology and electrical properties of the thin films have been investigated. The XRD patterns and the SEM sectional diagram indicate that Er-doped AlN thin films presents the preferred orientation of C axis. The crystalline quality of the films rises first and then decreases with the increase of sputtering time and reaches best at 90 minutes. Piezoelectric coefficient d33 indicates maximum value of 9.53pm/V. Correspondingly, the best surface morphology of thin film was obtained at 90 minutes and the surface roughness reached a minimum of 2.012 nm. In addition, the change of resistance is same with change of the crystalline quality and the resistivity reached a maximum of 4.36*1012Ω?cm at 90minutes.
关键词： piezoelectric properties,Er-doped AlN,crystal structure,resistivity,sputtering time,magnetron sputtering
更新于2025-09-10 09:29:36
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Effect of doping Gd2O3 on dielectric and piezoelectric properties of BaZr0.1Ti0.9O3 ceramics by sol–gel method
摘要： The effects of sintering temperature and doping amount of gadolinium ions on the microstructures and electrical properties of sol gel derived Ba (Zr0.1Ti0.9) O3 + xGd ceramics were investigated in this manuscript. XRD analysis showed that the main crystalline phase of BZT-xGd ceramic samples exhibit a perovskite structure without significantly change. The sample sintered at 1350 °C and doped with gadolinium ions of 0.5 mol% has uniform grain size and compact morphology. And the sample(1350 °C—0.5 mol%) also has a high piezoelectric charge coefficient of 131.33 pC/N, large plane electromechanical coupling coefficient of 0.22, high dielectric constant of 10504, and small dielectric loss of 0.01. The correlation of dielectric and piezoelectric properties of BZT-xGd ceramics with doping amount of Gd3+ ion has been explained by the lattice theory.
关键词： BZT-xGd ceramics,dielectric properties,sol–gel method,gadolinium doping,piezoelectric properties
更新于2025-09-04 15:30:14
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Influence of compositional ratio K/Na on structure and piezoelectric properties in [(Na1?xKx)0.5Bi0.5]Ti0.985Ta0.015O3 ceramics
摘要： [(Na1-xKx)0.5Bi0.5]Ti0.985Ta0.015O3 (abbreviated as Ta-NK100x) lead-free ceramics with good piezoelectric properties were prepared using a solid-state reaction method. The structure and electrical properties of Ta-NK100x had been systemically investigated. The highest bipolar strain of 0.458% and the unipolar strain 0.448% are achieved at x = 0.18 at 60 kV/cm. Meanwhile, the corresponding normalized strain d*33 reaches 747 pm/V. In addition, the unipolar strain of the poled Ta-NK18 increases to 0.537%, and corresponding d*33 increases slightly to 894.5 pm/V at 60 kV/cm. The electric-field-induced phase transition between ferroelectric and relaxor is found to play a dominant role in the origin of the large strain. Moreover, the strain behavior remains stable within 105 switching cycles which indicating the prepared ceramics are promising candidates for actuators and stress sensors.
关键词： ferroelectric,relaxor,solid-state reaction,piezoelectric properties,lead-free ceramics
更新于2025-09-04 15:30:14