- 标题
- 摘要
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- 实验方案
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[IEEE 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - Saint Petersburg, Russia (2018.10.22-2018.10.23)] 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - Signal Distortion Decreasing in Envelope Tracking Power Amplifiers
摘要： When amplifying signals with a high peak to average power ratio, the efficiency of linear radio frequency (RF) power amplifiers (PA) is reduced to about 30%. This flaw can be noticeably corrected by using envelope tracking technology. However, using switched mode PAs of envelope signal (ES) is accompanied by the emergence of nonlinear distortions, which can appear as undesirable components in the RF PA signal spectrum. One of the ways to reduce the negative influence of the switched mode is to use ES PA of multicell structure. The paper covers the issues of the ES PA number of cells influence on its efficiency and output signal distortion, as well as its influence on the efficiency and output signal distortion of the RF PA. It is shown that rational choice of the number of cells allows to increase the efficiency of ES PA from 94 through 98% and to reduce the level of intermodulation components in the envelope signal spectrum by 20 ... 25 dB.
关键词： envelope tracking,power amplifier,harmonic distortion,efficiency,multicell
更新于2025-09-23 15:23:52
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1-to-N Ring Power Combiners With Common Delta Ports
摘要： In this paper, we present a new 1-to-N way ring combiner that is an adaptation of the ring-hybrid (rat-race) structure. We present the general design guidelines for N-way planar ring combiners based on theoretical analysis of the structures. The proposed 1-to-N way ring structure offers a compact, planar layout that includes a single common delta port. This is beneficial to applications where power monitoring, calibration, or energy recycling can be leveraged. It offers similar loss to other N-way structures. To demonstrate the combiners operation, we present completely passive structures and structures with embedded power amplifiers for 4- and 6-way variants. The designs are optimized for operation in the 5–6 GHz unlicensed bands. The passive 4- and 6-way combiners achieve IL of 1.3 and 1 dB, respectively, with associated port isolations of <?30 dB. The combiners with embedded amplifiers show similar performance and are validated using modulated signals and demonstrate good measured linearity when combining up to 6 amplifiers for output powers >1 W.
关键词： ring-hybrid combiner,high power amplifier,power divider,Power combiner,rat-race combiner
更新于2025-09-23 15:22:29
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mmWave CMOS Power Amplifiers for 5G Cellular Communication
摘要： This article covers the basics of millimeter-wave PA design in CMOS technology for integrated phased arrays, targeting the upcoming 5G new radio (NR) cellular communication standard. Key PA figures of merit, as well as application of beam-forming phased arrays to combine power over-the-air, are briefly reviewed. Then, starting from practical handset form factor constraints and system-level drivers, CMOS-specific technological and design-related challenges are conceptually illustrated using a simple single-transistor PA. A survey of the state-of-the-art is presented to give examples of the challenges and illustrate the PA techniques used to tackle them in linear 28-GHz CMOS PAs for 5G NR.
关键词： beam-forming,efficiency,linearity,millimeter-wave,power amplifier,phased array,CMOS,5G
更新于2025-09-23 15:22:29
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Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications
摘要： This paper presents a monolithic microwave integrated circuit Doherty power amplifier (DPA) operating at sub-6 GHz for 5G communication applications by a 0.25-μm gallium nitride high-electron mobility transistor process. A compact impedance inverter and output matching of the DPA are achieved using a transmission line network and shunt capacitors. Also, the size ratio of power cells in the main and auxiliary amplifiers is optimized for a high efficiency at output power backoff (OPBO). The measured peak output power (Pout) and the 1-dB compression point (P1 dB) are 38.7 and 32.1 dBm, respectively, at 5.9 GHz. The power-added efficiency at 6-dB OPBO is up to 49.5%. Without digital predistortion (DPD), the DPA can deliver an average Pout of 23.5 dBm with error vector magnitude (EVM) <?28 dB and 21.5 dBm with EVM <?32 dB for 64-quadrature amplitude modulation (QAM) and 256-QAM signals, respectively. The measured X-parameters are employed to further investigate the DPA nonlinear characteristics and verify the accuracy of conventionally used power amplifier characterization/measurement methods for system-level design and testing applications. The simulated results based on the X-parameters also indicate that the average output power can be enhanced up to 25.7 dBm with DPD for 256-QAM.
关键词： 5G communication,monolithic microwave integrated circuit (MMIC),X-parameters,power-added efficiency (PAE),power amplifier (PA),Doherty,gallium nitride (GaN)
更新于2025-09-23 15:21:21
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[IEEE 2018 IEEE 5G World Forum (5GWF) - Silicon Valley, CA, USA (2018.7.9-2018.7.11)] 2018 IEEE 5G World Forum (5GWF) - Packaged High Power Frond-End Module for Broadband 24GHz & 28GHz 5G solutions
摘要： This paper presents realization and characteristics of broadband plastic low cost packaged 5G High Power Frond-End (HPFE) operating in 24-31GHz bandwidth. This demonstrator includes a Transmit and Receive paths realized on mixed technologies: 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs). Continuous Wave (CW) measured power results of the Transmit path (Tx) demonstrates a maximum output power (POUT,Tx) higher than 2W (33.5dBm) with 25% drain efficiency (DE), 24% power added efficiency (PAE), and 36dB of insertion gain (GI,Tx) in the 24-31GHz bandwidth. The receiver path (Rx) presents an maximum output power (POUT,Rx) of 30mW (15.5dBm) and an average Noise Figure (NF) of 3.6dB with an associated Insertion Gain (GI,Rx) of 20dB in the same bandwidth. The HPFE/Tx linearity has been investigated with several M-QAM modulation signals with 25/50 and 100MHz channel spacing and using Digital Pre-Distortion (DPD) leading to 48dBc Adjacent Channel Leakage Ratio (ACLR) and 40dB Mean Squared Error (MSE) for average output powers ranging from linearity performances have been 17dBm to 25dBm. The compared to the ones obtained with two other linear GaAs amplifiers to point telecommunications application: the HPFE presents similar linearity performances associated to a higher efficiency. Thanks to the mixed technologies approach, an optimized trade-off in terms of integration, electrical performances and cost has been demonstrated.
关键词： MMIC,PHEMT,Gallium Arsenide,Plastic packaging,Transmit/Receive path,Low Noise Amplifier,Gallium Nitride,Power Amplifier,Switch
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Optimization Methods for Evaluating PV Hosting Capacity of Distribution Circuits
摘要： We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode.
关键词： Bluetooth Low-Energy,low-voltage oscillator,class-E/F2 power amplifier,All-digital PLL,low-power switching current-source transmitter,Internet of Things (IoT)
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE Asian Solid-State Circuits Conference (A-SSCC) - Macau, Macao (2019.11.4-2019.11.6)] 2019 IEEE Asian Solid-State Circuits Conference (A-SSCC) - A 0.7mm <sup>2</sup> 8.54mW FocusNet Display LSI for Power Reduction on OLED Smart-phones
摘要： A discontinuous conduction mode (DCM) zero-voltage switching (ZVS) scheme for a class-D power amplifier (PA) for wireless power transfer is presented. The sizes of the ZVS inductor and capacitor are reduced by 7.5 and 5 times and ZVS is achieved even subject to PA supply voltage and output current variations. The class-D PA was fabricated with a 0.35 μm high-voltage CMOS process. The ZVS LC resonant tank consists of a 39 nH inductor and a 200 nF capacitor. The switching frequency was 6.78 MHz and the supply voltage was 20 V. Measurement results show that the PA delivered an output power of 7.18 W with a peak efficiency of 87.0%.
关键词： power amplifier,wireless power transfer,Class-D,zero-voltage switching (ZVS)
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Kuta, Bali, Indonesia (2019.10.23-2019.10.25)] 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Measurement of Complex Permittivity of Tissue-Equivalent Liquid Poured in a Waveguide Well
摘要： A method to characterize the memory effects in a nonlinear concurrent dual-band transmitter is presented. It is an extension of the conventional two-tone test for power amplifiers to concurrent dual-band transmitters. The output signal of a concurrent dual-band transmitter is affected not only by intermodulation (IM) products but also by cross-modulation (CM) products. In one frequency band, the transmitter is excited by a two-tone signal which frequency separation is swept. In the second band, the transmitter is concurrently excited by another two-tone signal with slightly wider frequency separation. The frequency difference of the two signals is fixed during the frequency sweep. The two-tone test is made at different power levels. The upper and lower third-order IM and CM products are measured. The asymmetry between the upper and lower the third-order transmitter’s memory effects. The measurement results show that the memory effects are more dominant in the third-order IM products than in the CM products. An error analysis and system calibration was performed and measurement results for two different devices are presented.
关键词： cross modulation (CM),dual band,digital predistortion (DPD),multiple input multiple output (MIMO),Amplifier,power amplifier (PA),intermodulation (IM)
更新于2025-09-23 15:19:57
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[Laser Institute of America ICALEO? 2014: 33rd International Congress on Laser Materials Processing, Laser Microprocessing and Nanomanufacturing - San Diego, California, USA (October 19–23, 2014)] International Congress on Applications of Lasers & Electro-Optics - High power 1030 nm YB-doped picosecond all fiber laser
摘要： A high power 1030 nm passively mode-locked ytterbium-doped picosecond fiber laser by master oscillator power amplifier (MOPA) configuration is demonstrated. The laser system consists of the picosecond seed and three stages of ytterbium-doped all-fiber amplifiers. The seed is mode-locked by a semiconductor saturable absorber mirror (SESAM), and a stable output is obtained with 30.7 ps pulse width, 29.0 MHz repetition rate, and 30 mW average output power. The laser operates at 1030.4 nm with a spectral width of 0.15 nm. After three stages of fiber amplification, the final output power is scaled up to 101 W in a 30/250 μm double-clad ytterbium doped fiber with the slope efficiency of 76.7%. The laser performance with the pulse width of 36.6 ps, pulse energy of 3.48 μJ, peak power as high as 97 kW operating at 1030.4 nm with bandwidth of 1.46 nm is achieved, and the beam quality M2 is 2.78.
关键词： passively mode-locked,master oscillator power amplifier,lasers,ytterbium-doped fiber
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Determination of the Residual Amplified Spontaneous Emission in Single-Mode Semiconductor Optical Amplifiers
摘要： The Master-Oscillator-Power-Amplifier (MOPA) is a laser light source best suited to provide high power, stable frequency, and narrow linewidth emission. In state-of-the-art MOPA systems, semiconductor optical amplifiers (SOAs) with single-mode lateral waveguides provide a compromise between the demands for high power on one side and excellent beam quality and small astigmatism of the optical mode on the other. The amplified spontaneous emission (ASE) in SOAs remains a limiting factor for the deployment of the MOPA systems in quantum technology applications. The presence of ASE reduces the carrier density and hence the device efficiency, increases the noise in the output signal, and adds incoherent background radiation that is critical, for example, for atom interferometry applications. It is therefore important to understand the dependence of the ASE on the design and operating conditions of an SOA in detail in order to develop SOAs optimized for applications that require spectrally very pure radiation. In this work, the coherent and the residual ASE power of ridge waveguide (RW) SOAs are experimentally determined as a function of the seed power (optical power at the input of the SOA) and the SOA current. The experiment provides essential information about the suppression of the ASE background and the saturation behaviour of the optical amplifier. The measurement setup is depicted in Fig. 1 (a). The seed laser (ECDL, TE-polarized at 871 nm) is operated far above its threshold to avoid amplification of the spontaneous emission of the seed laser by the SOA. An acousto-optic modulator (AOM) is used to set the seed power. The laser beam is then fed into the 6 mm long SOA. A non-polarizing beam splitter (BS) cube divides the output beam into two parts. One part (reference beam) is detected using a power meter (PM). The spectrum of the second part is recorded using an Advantest Q8347 optical spectrum analyser (OSA). The measured data is analysed using the correlation between optical power measured with the power meter and the optical spectrum. The ASE power is reconstructed from the remaining ASE (fitted) spectrum after removing the coherent part. Fig. 1(b) shows the measured total output, ASE and coherent powers retrieved from the spectrum as a function of the seed power. The measured quantities in Fig. 1(b) are compared to theoretical values which are calculated using a SOA model similarly as described in [2]. The carrier-density dependent spectra of the gain and the spontaneous emission are obtained from a microscopic model taking into account the waveguide structure [3]. The comparison shows good qualitative agreement between theory and measurement. We show how the experimental findings are used to validate and calibrate the model and how the model can be applied to compare the performance (coherent power, ASE background, saturation behaviour) of SOAs at different seed powers, injection current setting, different lengths or different lateral geometries.
关键词： ridge waveguide SOAs,semiconductor optical amplifiers,Master-Oscillator-Power-Amplifier,quantum technology applications,amplified spontaneous emission
更新于2025-09-12 10:27:22