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Investigation of KBiFe <sub/>2</sub> O <sub/>5</sub> as a Photovoltaic Absorber
摘要： KBiFe2O5 (KBFO) was grown by pulsed laser deposition (PLD) on SrTiO3 (001) (STO), 1 at% Nb-SrTiO3 (001) (Nb-STO) and MgAl2O4 (001) (MAO). In the case of MAO substrate, epitaxial growth is obtained. As its bandgap is relatively low (1.6 eV in the bulk), KBFO is a promising candidate for oxide photovoltaics. In this work we examine the growth of KBFO by PLD by looking at its structure and composition and we investigate the optical properties of the films obtained. A photovoltaic architecture based on KBFO films is proposed and a solar cell behaviour based on KBFO absorber is obtained.
关键词： pulsed laser deposition,solar cell,thin film,photovoltaics,oxide
更新于2025-09-23 15:19:57
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High performance UV photodetector based on MoS2 layers grown by pulsed laser deposition technique
摘要： Highly efficient ultraviolet (UV) photodetector based on MoS2 layers has been fabricated using pulsed laser deposition (PLD) technique. Systematic layer dependent photoresponse studies have been performed from single layer to 10 layers of MoS2 by varying the laser pulses to see the effect of the number of layers on the photoelectrical measurements. Raman and Photoluminescence studies have been carried out to ensure the growth of high-quality MoS2 layers. Layers of MoS2 grown at 100 pulses were found to exhibit the characteristic Raman phonon modes i.e. E1 2g and A1g at 383.8 cm-1 and 405.1 cm-1 respectively and Photoluminescence (PL) spectra show B exciton peak for MoS2 at around 625 nm suggesting the growth of high-quality MoS2 layers. Atomic force microscopy (AFM) thickness profiling and cross sectional-high resolution transmission electron microscopy (HRTEM) analysis gives the thickness of grown MoS2 to be 2.074 nm and 1.94 nm, respectively, confirming the growth of trilayers of MoS2. X-ray photoelectron spectroscopy (XPS) spectra of the grown trilayer sample show characteristic peaks corresponding to Molybdenum and Sulphur doublet (Mo4+ 3d5/2,3/2 and S 2p3/2,1/2) confirming the chemical state of pure MoS2 phase without the presence of any Molybdenum oxide state. Dynamic photoelectrical studies with Indium Tin Oxide (ITO) as contact electrode upon UV laser illumination show superior responsivity of 3×104 A/W at 24 μW optical power of the incident laser (λ=365 nm) and very high detectivity of 1.81×1014 Jones at a low applied bias of 2 V. The obtained results are highly encouraging for the realization of low power consumption and highly efficient UV photodetectors based on MoS2 layers.
关键词： Pulsed laser deposition technique (PLD),2D material,UV photodetector,ITO electrode,cross-sectional TEM,Raman,MoS2 layers,XPS,AFM
更新于2025-09-23 15:19:57
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Tetragonal tungsten bronze phase thin films in the Ka??Naa??Nba??O system: Pulsed laser deposition, structural and dielectric characterizations
摘要： Pulsed laser deposition parameters have been determined to synthesize pure Tetragonal Tungsten Bronze (TTB) phase thin films in the (K,Na)-Nb-O system (KNN). In relation to the high volatility of alkaline elements, it was found that the target composition and the target-substrate distance are of first importance. The TTB phase was identified by X-ray and electron diffraction and the surface microstructure consisting mainly of nanorods supports the formation of hallmark of the TTB phase. Poly-oriented nanorods have been obtained on both C-plane sapphire and (111)Pt/TiO2/SiO2/(001)Si substrates whereas horizontal nanorods oriented along the (hk0) planes have been grown on (100) and (110) SrTiO3. All the nanorods are parallel together when grown on (110) SrTiO3 and they present two in-plane orientations rotated of 90° from each other on (100) SrTiO3. Dielectric characteristics (dielectric permittivity e r, and loss tangent tand ) have been measured at low (1 kHz - 1 MHz) and high (1 GHz - 40 GHz) frequencies, on films deposited on Pt coated silicon and sapphire, respectively. A value of e r = 200 at 1 kHz with tand = 0.015 were measured in a parallel plate capacitor configuration, whereas e r = 130 and tand = 0.20 at 10 GHz were retrieved from transmission lines printed on the KNN TTB thin film grown on C-plane sapphire. Raman investigations of the TTB films were performed in the temperature range 77 - 873 K, confirming the TTB phase formation and the absence of structural transition. Piezoelectric Force Microscopy measurements evidenced a piezoelectric signal although no switching could be performed. However the dielectric measurements, complicated by high leakage currents when a DC voltage was applied, did not evidence any proof of ferroelectricity for the undoped KNN TTB films whereas results reported on other niobates (A,A')0.6Nb10O30 (with A: K, Na and A': Sr, Ba, Ca) have shown Curie temperatures, lying between 156°C and 560°C, separating the paraelectric phase (space group: P4/mbm N°127) and the ferroelectric one (space group: P4bm N°100).
关键词： Tetragonal Tungsten Bronze,Nanorods,Dielectric characterizations,K-Na-Nb-O system,Pulsed laser deposition
更新于2025-09-23 15:19:57
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Effects of external magnetic field on the micro-structure of diamond-like carbon film prepared by pulsed laser deposition
摘要： The DLC ?lm was deposited by pulsed laser deposition in an external magnetic ?eld, and its optical property, surface morphology and atomic bonds were researched. The simulated ?ight tracks of the carbon ions in the magnetic ?eld showed that a number of the carbon ions were constrained by the Lorentz force, ?ing onto the substrate and forming the DLC ?lm. The contrast between the micro-structures of the DLC ?lms deposited in or out the magnetic ?eld showed that the external magnetic ?eld changed the expansion of the laser-produced plume and con?ned the surface diffusion of the charged particles on the substrate, improving the content of the sp3 bonds in the DLC ?lm.
关键词： pulsed laser deposition,diamond-like carbon ?lm,external magnetic ?eld,optical property,atomic bond
更新于2025-09-23 15:19:57
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Magnetic bipolar transistor based on ZnO/NiO/Si heterostructure using pulsed laser deposition
摘要： Oxide semiconductors are promising candidates for next generation electronics. In this work, magnetic bipolar transistor was fabricated by growing thin films of p-NiO and n-ZnO on n-type silicon wafer by pulsed laser deposition technique with an in-situ annealing at 670○ C in the presence of oxygen. The structural characterization of these films was done by X-ray diffraction and Raman spectroscopy and magnetic properties were studied by vibrating sample magnetometer (VSM). I-V characteristic of fabricated transistor was tested in common emitter configuration with DC biasing. Junction parameters such as ideality factor, series resistance, and transistor parameters like q-point were determined by using conventional transistor output characteristics. The diode and transistor showed an increase in current with the externally applied magnetic field due to the presence of Nickel or Oxygen vacancies in NiO attributing to spin polarized bipolar transport. Therefore the current amplification in these devices can be controlled by spin; making it attractive for spintronic applications.
关键词： oxide semiconductors,pulsed laser deposition,spintronic applications,magnetic bipolar transistor
更新于2025-09-23 15:19:57
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Electrical Properties of Pure NiO and NiO:Ag Thin Films Prepared by Pulsed Laser Deposition
摘要： The electrical properties of pure NiO and NiO:Ag films which are deposited on glass substrate with various dopant concentrations (1wt%, 2wt%, 3wt% and 4wt%) at room temperature and 450 °C annealing temperature will be presented. Further, the structural properties were investigated by X-ray diffraction and the surface morphology of the deposited samples was examined by SEM. The results of the Hall effect showed that all the films were p-type. Hall mobility decreases while both carrier concentration and conductivity increase with the increasing of annealing temperatures and doping percentage, Thus, the behavior of semiconductor, and also the DC conductivity from which the activation energy decreases with the doping concentration increase and transport mechanism of the charge carriers can be estimated.
关键词： Hall effect,Electrical conductivity,NiO:Ag thin films,Pulsed laser deposition
更新于2025-09-23 15:19:57
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In situ forming of ternary metal fluoride thin films with excellent Li storage performance by pulsed laser deposition
摘要： In the field of lithium ion battery, conversion-based metal fluoride cathodes are attractive for their excellent theoretical capacity and high voltage. However, the utilization of binary metal fluorides is severely hindered by irreversibility and large voltage hysteresis. The introduction of ternary metal fluorides, like AgCuF3 and CuxFe1-xF2, brings hope to address these shortcomings. To better understand the basic mechanism of conversion reaction in ternary metal fluoride cathodes, the Cu–Fe–F (CFF) thin films were successfully grown in situ by pulsed laser deposition in this work. The physico-chemical properties and electrochemical performance were discussed. Such a CFF solid solution phase presented great cycle stability (82% capacity remains after 100 cycles at current density of 285 mA g?1) and higher energy efficiency (71.8%), which can be attributed to the reversible structural rearrangement after the delithiation process disclosed by ex situ XPS, high-resolution TEM, and selected-area electron diffraction.
关键词： Thin film,Ternary metal fluoride,Lithium ion battery,Pulsed laser deposition
更新于2025-09-23 15:19:57
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Ferroelectric properties and phase transitions of high performance vertically aligned KNN nanowire-arrays grown by pulsed laser deposition
摘要： Pulsed laser deposition (PLD) was used to synthesize piezoelectric nanowire-arrays of K0.5Na0.5NbO3 (KNN) on Pt/TiO2/SiO2/Si substrates. These arrays were successfully prepared by using two different deposition conditions than the previously reported for KNN. KNN with orthorhombic structure and minority secondary phases were identified by XRD. Ferroelectric and Piezoelectric properties were confirmed by piezoresponse force microscopy, and showed that nanowire-arrays have an improvement in their effective piezoelectric coefficient of d33eff = 94.6 pm/V and 133.6 pm/V, higher than previously reported coefficients. Pulsed laser photoacoustic technique was used to analyze the phase transition temperatures and they showed a phase transition (O-T) at ～170 ?C and a phase transition (T-C) at ～360 ?C, lower temperatures than those found for bulk ceramics. Furthermore, it was identified the presence of minor amount of secondary ferroelectric phase (K4Nb6O17).
关键词： Phase transitions,KNN nanowire-arrays,Ferroelectric properties,Pulsed laser deposition,Piezoelectric coefficient
更新于2025-09-23 15:19:57
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Grain Boundaries Limit the Charge Carrier Transport in Pulsed Laser Deposited ?±-SnWO <sub/>4</sub> Thin Film Photoabsorbers
摘要： Recently, α-SnWO4 attracted attention as a material to be used as a top absorber in a tandem device for photoelectrochemical water splitting due to its nearly optimum bandgap of ~1.9?eV and an early photocurrent onset potential of ~0 V vs. RHE. However, the mismatch between the charge carrier diffusion length and light penetration depth—which is typical for metal oxide semiconductors—currently hinders the realization of high photoconversion efficiencies. In this work, the pulsed laser deposition process and annealing treatment of α-SnWO4 thin films are elucidated in order to optimize their charge carrier transport properties. A high temperature treatment is found to enhance the photoconductivity of α-SnWO4 by more than one order of magnitude, as measured with time-resolved microwave conductivity (TRMC). A complimentary analysis by time-resolved terahertz spectroscopy (TRTS) shows that this improvement can be assigned to an increase of the grain size in the heat-treated films. In addition, TRTS reveals electron-hole charge carrier mobilities of up to 0.13 cm2 V-1s-1 in α-SnWO4. This is comparable to values found for BiVO4, which is one of the best performing metal oxide photoanode materials to date. These findings show that there is a significant potential for further improving the properties of α-SnWO4 photoanodes.
关键词： α-SnWO4,metal oxide photoelectrodes,grain boundaries,charge carrier dynamics,pulsed laser deposition
更新于2025-09-23 15:19:57
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Pure CuBi <sub/>2</sub> O <sub/>4</sub> Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi <sub/>2</sub> O <sub/>3</sub> /CuO Grown by Pulsed Laser Deposition
摘要： A new method for enhancing the charge separation and photo-electrochemical stability of CuBi2O4 photoelectrodes by sequentially depositing Bi2O3 and CuO layers on fluorine-doped tin oxide substrates with pulsed laser deposition (PLD), followed by rapid thermal processing (RTP), resulting in phase-pure, highly crystalline films after 10 min at 650 °C, is reported. Conventional furnace annealing of similar films for 72 h at 500 °C do not result in phase-pure CuBi2O4. The combined PLD and RTP approach allow excellent control of the Bi:Cu stoichiometry and results in photoelectrodes with superior electronic properties compared to photoelectrodes fabricated through spray pyrolysis. The low photocurrents of the CuBi2O4 photocathodes fabricated through PLD/RTP in this study are primarily attributed to their low specific surface area, lack of CuO impurities, and limited, slow charge transport in the undoped films. Bare (without protection layers) CuBi2O4 photoelectrodes made with PLD/RTP shows a photocurrent decrease of only 26% after 5 h, which represents the highest stability reported to date for this material. The PLD/RTP fabrication approach offers new possibilities of fabricating complex metal oxides photoelectrodes with a high degree of crystallinity and good electronic properties at higher temperatures than the thermal stability of glass-based transparent conductive substrates would allow.
关键词： CuBi2O4,solar water splitting,rapid thermal processing,ternary oxides,pulsed laser deposition
更新于2025-09-23 15:19:57