研究目的
Investigating the electrical properties of pure NiO and NiO:Ag thin films deposited on glass substrates with various dopant concentrations at room temperature and 450 °C annealing temperature.
研究成果
The study concluded that pure NiO and NiO:Ag thin films are p-type semiconductors. Hall mobility decreases with increasing dopant concentration, while carrier concentration and conductivity increase. The conductivity of NiO:Ag films increases with Ag doping, and the films exhibit thermally activated conduction at higher temperatures.
研究不足
The study is limited to the analysis of electrical and structural properties of NiO and NiO:Ag thin films prepared by PLD. The effects of other deposition methods or dopants were not explored.
1：Experimental Design and Method Selection:
The study used pulsed laser deposition (PLD) to prepare NiO and NiO:Ag thin films on glass substrates. The structural properties were investigated by X-ray diffraction (XRD), and the surface morphology was examined by scanning electron microscopy (SEM). Electrical properties were analyzed using Hall effect measurements and DC conductivity tests.
2：Sample Selection and Data Sources:
Thin films of pure NiO and NiO:Ag with dopant concentrations of 1wt%, 2wt%, 3wt%, and 4wt% were prepared. The films were deposited at room temperature and annealed at 450 °C.
3：List of Experimental Equipment and Materials:
Nd:YAG SHG Q-switching laser for PLD, XRD for structural analysis, SEM for surface morphology, and Hall effect measurement system for electrical properties.
4：Experimental Procedures and Operational Workflow:
The PLD process was carried out in a vacuum chamber at 10?3 Torr. The laser beam was incident on the target at a 45° angle. The substrate was placed parallel to the target. Films were characterized by XRD, SEM, and Hall effect measurements.
5：Data Analysis Methods:
The crystallite sizes were estimated using Scherrer’s formula. Electrical conductivity and carrier concentration were analyzed from Hall effect data.
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