- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Valparaiso, Chile (2019.11.13-2019.11.27)] 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Fourier-Bessel Shapes in Output Photocurrents and Frequency Chirping Effects from Laser Fields
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0 .5 8 In0 .4 2 P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of Gax In1 ?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in Gax In1 ?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI , samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-23 15:21:01
-
[IEEE 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Orlando, FL, USA (2019.6.23-2019.6.29)] 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Auto-collimation and monitoring of laser beam in high power electron-pumped KrF laser facility
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0 .5 8 In0 .4 2 P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of Gax In1 ?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in Gax In1 ?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI , samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-19 17:13:59
-
[IEEE 2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Guangzhou, China (2019.5.19-2019.5.22)] 2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A Circularly Polarized Waveguide Slot Antenna for Random Array Application
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0.58In0.42P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of GaxIn1?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in GaxIn1?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI, samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-19 17:13:59
-
Computer-automated tuning procedures for semiconductor quantum dot arrays
摘要： As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibration of virtual gates, a process that previously involved a large amount of user intervention. Moreover, we show that straightforward feedback protocols can be used to simultaneously tune multiple tunnel couplings in a triple quantum dot in a computer automated fashion. Finally, we adopt the use of a “tunnel coupling lever arm” to model the interdot barrier gate response and discuss how it can be used to more rapidly tune interdot tunnel couplings to the gigahertz values that are compatible with exchange gates.
关键词： image recognition,tunnel couplings,automated control software,virtual gates,semiconductor quantum dot devices,charge stability diagrams,quantum computing
更新于2025-09-11 14:15:04
-
[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - An Investigation on Stable and Continuous Operation of Hybrid Perovskite Quantum Dot Light Emitting Diodes
摘要： Two different package structures of hybrid perovskite quantum dots light emitting diodes were demonstrated with stable and continuous light emission. With boron nitride nanoparticles, the lifetime of device is expected to be thousands of hours.
关键词： Nanomaterials,Quantum-dot devices,Light-emitting diodes
更新于2025-09-11 14:15:04
-
[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - O-Band Quantum Dot Semiconductor Optical Amplifier Directly Grown on CMOS Compatible Si Substrate
摘要： We report the first demonstration of the O-band quantum dot semiconductor optical amplifier (QD-SOA) that is directly grown on CMOS compatible on-axis silicon substrate. The QD-SOA has a length of 3600 ????, tapered from 4 ???? to 5.5 ????, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
关键词： semiconductor optical amplifiers,molecular beam epitaxy,direct growth on silicon,Quantum dot devices
更新于2025-09-11 14:15:04