研究目的
To demonstrate the first O-band quantum dot semiconductor optical amplifier (QD-SOA) directly grown on CMOS compatible on-axis silicon substrate, aiming to enrich the photonic component library for future large-scale silicon electronic and photonic integrated circuits (EPICs).
研究成果
The demonstration of an O-band QD-SOA directly grown on CMOS compatible silicon substrate with high gain and saturation output power significantly contributes to the photonic component library, enhancing the performance of future large-scale silicon EPICs.
研究不足
The study is limited by the tunable light source sweep range, which only allowed characterization of wavelength gain around the ground state (GS). The device's performance could potentially be optimized further by addressing the coupling loss and series resistance.
1：Experimental Design and Method Selection:
The QD-SOA was designed with a tapered gain section to increase saturation output power, employing an 8° tilted waveguide angle. The epitaxial growth was completed using solid-source molecular beam epitaxy on an on-axis (001) Si substrate with a GaP buffer layer.
2：Sample Selection and Data Sources:
The active region consists of a five-layer stack InAs/InGaAs dots-in-a-well structure with p-modulation doped GaAs spacer layers.
3：List of Experimental Equipment and Materials:
The fabrication utilized standard semiconductor fabrication technology, with anti-reflection coating applied to both facets.
4：Experimental Procedures and Operational Workflow:
The device was tested on a temperature-controlled copper stage at 20℃, using two probe cards for homogeneous pumping and AR-coated single mode lensed fibers for optical signal coupling.
5：Data Analysis Methods:
On-chip gain was obtained by comparing spectral peak intensity with and without the QD-SOA, and noise figure was measured across the input power range.
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