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High Speed Directly Modulated Fabry-Perot Lasers with an Ultra-Short Cavity Length
摘要： In this study, Fabry-Perot quantum well lasers with shortened cavity designs (25 and 50 μm) were fabricated. The devices had dry-etched and cleaved facets that exhibited an output power of up to 2.36 mW for a cavity length of 25 μm; good spectral performance was achieved. Single-optical-mode operation with better than 25dB of side mode suppression ratio can be achieved for the fabricated devices with 25- and 50-μm cavities. The short-cavity devices also exhibited high-speed modulation at elevated temperatures. Moreover, 25 Gb/s eye diagrams could be obtained at 65oC for the 25 μm device and 55oC for the 50 μm device. Due to their small area, ultra-short-cavity Fabry-Perot laser can be suitably used in next-generation light sources for optical communication.
关键词： Optical device fabrication,Semiconductor lasers,Laser cavity resonators,Amplitude modulation,Diode lasers,Quantum well lasers,Laser modes
更新于2025-09-23 15:21:01
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InP-based surface-emitting distributed feedback lasers operating at 2004 nm
摘要： We demonstrate InP-based buried grating coupled surface-emitting distributed feedback (DFB) lasers designed to operate at a wavelength of 2004 nm. The laser structure consists of three InGaAsSb/InGaAs QWs, with a 5 μm-wide double-channel ridge waveguide. A second-order semiconductor/semiconductor grating is used for in-plane feedback and vertical out-coupling. The single longitudinal mode emission wavelength of the fabricated laser can be adjusted from 2002.7 to 2006 nm without any mode hopping. High side-mode suppression ratio (SMSR) of at least 35 dB is achieved under all injection currents and temperature conditions. The edge output power reaches 19 mW, measured in continuous-wave (CW) mode at 10 °C. Simultaneously, the output power of surface emission reaches 8 mW.
关键词： distributed feedback,InP-based,surface emission,quantum well lasers
更新于2025-09-12 10:27:22
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Threshold Current Density of Al0.1Ga0.9N/GaN Triple Quantum Well Laser
摘要： Semiconductor laser is used in processing many issues related to the scientific, military, medical, industrial and agricultural fields due to its unique properties such as coherence and high strength where GaN-based components are the most efficient in this field. Current technological developments mention to the strong connection of GaN with sustainable electronic and optoelectronic devices which have high-efficiency. The threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure was investigated to determine best values of the parameters affecting the threshold current density that are well width, average thickness of active region, cavity length, reflectivity of cavity mirrors and optical confinement factor. The optimum value of the threshold current density is 2670 A/cm2 was obtained when the well width (w= 2.5 nm), reflectivity of cavity mirrors (R1=0.75, R2=0.9), cavity length (L=2mm), average thickness of active region (d= 11.5 nm), and optical confinement factor ( Γ= 0.034) at room temperature.
关键词： threshold current density,GaN,multiple quantum well lasers,AlGaN
更新于2025-09-12 10:27:22
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Activated Auger Processes and their Wavelength Dependence in Type-I Mid-Infrared Laser Diodes
摘要： Type-I quantum well (QW) lasers based on the GaSb material system show attractive characteristics in the mid-infrared [1]. However, as the wavelength (λ) increases in the range of 2-4 μm their performance begins to deteriorate due to increasing Auger recombination [2]. In the Auger process, the energy released from an electron-hole recombination is transferred to a third carrier. In order to develop strategies to suppress Auger recombination, it is crucial to understand the magnitude and nature of the dominant Auger recombination pathway, and their dependencies on the operating λ and temperature (T). In QW structures two fundamentally different Auger process can occur [3]. In an activated Auger process, initial and final carrier states are confined to the plane of the QW. The recombination rate due to this process depends exponentially on T because it is determined by an activation energy, which is a consequence of energy and momentum conservation. In a thresholdless Auger process, the initial carrier states can exist near the band edge (bottom of conduction/valence band) and the third carrier is excited into the continuum of unbound states in a direction perpendicular to the plane of the well. Without an activation energy, the thresholdless Auger process exhibits only a weak T dependence. In this work, we report on the T and λ dependence of the threshold current density (Jth) of type-I QW devices operating in range 1.95-3.2 μm. From T-dependent measurements, we find that radiative recombination dominates from low T up to a break point temperature [4]. Beyond this break point the temperature sensitivity of Jth increases rapidly, indicating the onset of a strongly temperature-sensitive activated Auger process. Using hydrostatic pressure, we tune the operating λ of the lasers in order to probe the λ dependence of the Auger coefficient. Modelling the gain and loss characteristics of the lasers allowed the threshold carrier density (nth) to be determined. Since the carrier density calculations depend sensitively on the threshold gain, we undertook segmented contact measurements to experimentally determine the optical loss. By extracting the experimentally-determined radiative component of Jth and assuming the remaining non-radiative current (cid:1836)(cid:1866)(cid:1870)=(cid:1829)(cid:1866)(cid:1872)?, C and its λ dependence were calculated, although the analysis also provides evidence that the dependence is not strictly cubic (i.e., C depends on nth).
关键词： temperature dependence,Type-I quantum well lasers,Auger recombination,mid-infrared,wavelength dependence,GaSb material system
更新于2025-09-12 10:27:22
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Recent advances in the photonic integration of mode-locked laser diodes
摘要： Mode-locked ?ber and solid state lasers have played an essential role in several scienti?c and technological developments. The integration of mode-locked lasers on chips could enable their use in a wide range of applications. The advancement of semiconductor mode-locked laser diodes has been going on for several decades, but has recently seen the development of novel devices based on generic InP and III-V-on-silicon photonic integration platforms. These photonic integration platforms enable the use of standardized components and low-loss waveguides within the laser cavity, allowing for the design of advanced extended cavities. In this manuscript we give a review of these novel devices and compare their performance.
关键词： Semiconductor lasers,silicon photonics,quantum well lasers
更新于2025-09-11 14:15:04