研究目的
Investigating the threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure to determine the best values of parameters affecting it.
研究成果
The study concluded that the optimal threshold current density for the Al0.1Ga0.9N/GaN triple quantum well laser structure is 2670 A/cm2, achieved with specific values of well width, cavity length, reflectivity of cavity mirrors, average thickness of active region, and optical confinement factor at room temperature.
研究不足
The study is theoretical and based on simulations, which may not account for all practical variations in material properties and manufacturing processes.
1：Experimental Design and Method Selection:
The study involved theoretical modeling and simulation to investigate the threshold current density of a triple quantum well laser structure. Equations related to radiative recombination, non-radiative recombination, and threshold current density were used.
2：Sample Selection and Data Sources:
The study focused on Al0.1Ga0.9N/GaN triple quantum well laser structures. Data was derived from theoretical models and previous research.
3：1Ga9N/GaN triple quantum well laser structures. Data was derived from theoretical models and previous research.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Not explicitly mentioned, but the study involves semiconductor laser materials and structures.
4：Experimental Procedures and Operational Workflow:
The study used mathematical models to simulate the effects of various parameters on the threshold current density.
5：Data Analysis Methods:
The analysis involved plotting threshold current density against various parameters like well width, cavity length, and temperature to determine optimal values.
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