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Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes
摘要： The 60Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells in pulse mode (programmed/erased with pulse voltage) and dc mode (programmed/erased with direct voltage sweeping) are investigated. The threshold voltage and off-state current of memory cells before and after radiation are measured. The experimental results show that the memory cells in pulse mode have a better radiation-hard capability. The normalized memory window still remains at 60% for cells in dc mode and 76% for cells in pulse mode after 300 krad(Si) radiation. The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed.
关键词： dc mode,pulse mode,total ionizing dose,radiation effects,SONOS memory
更新于2025-09-23 15:23:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Desynchronization of Pulsed Driving in the Formation of Soliton Kerr Frequency Combs
摘要： MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRèME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.
关键词： single event upset,single event effects,total ionizing dose,radiation effects,Displacement damage,Monte Carlo,radiation transport,MRED
更新于2025-09-23 15:21:01
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[IEEE 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Daejeon, Korea (South) (2019.7.28-2019.8.1)] 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Monolithic integration of III-V microdisk lasers on silicon
摘要： Channel electron multiplier (CEM) and microchannel plate (MCP) detectors are routinely used in space instrumentation for measurement of space plasmas. Our goal is to understand the relative sensitivities of these detectors to penetrating radiation in space, which can generate background counts and shorten detector lifetime. We use keV -rays as a proxy for penetrating radiation such as -rays, cosmic rays, and high-energy electrons and protons that are ubiquitous in the space environment. We ?nd that MCP detectors are times more sensitive to keV -rays than CEM detectors. This is attributed to the larger total area of multiplication channels in an MCP detector that is sensitive to electronic excitation and ionization resulting from the interaction of penetrating radiation with the detector material. In contrast to the CEM detector, whose quantum ef?ciency keV -rays is found to be 0.00175 and largely independent of detector bias, the quantum ef?ciency of the MCP detector is strongly dependent on the detector bias, with a power law index of 5.5. Background counts in MCP detectors from penetrating radiation can be reduced using MCP geometries with higher pitch and smaller channel diameter.
关键词： radiation effects,Electron multipliers,gamma-ray effects,plasma measurements
更新于2025-09-23 15:21:01
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Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
摘要： We have investigated the displacement damage (DD) effect on the electrical characteristics of ZnO thin film transistors (TFTs) based on its location of origin in the device structure. The area subjected to the maximum proton dose induces a maximum DD effect in that particular location. ZnO TFTs with two different passivation layer thicknesses were prepared to obtain maximum proton dose distribution in either the ZnO channel layer or ZnO/SiO2 interface. The devices were irradiated by a proton beam with an energy 200 keV and 1 × 1014 protons/cm2 fluence. Transport of Ions in Matter (TRIM) simulation, followed by calculation of depth distribution of the nonionizing energy loss (NIEL), illustrated different proton dose distribution profiles and NIEL profiles along the depth of the device for these two types of samples. The sample with the maximum proton dose peaks at the ZnO/SiO2 interface exhibited a significant degradation in device electrical characteristics as compared to the negligible degradation of the sample when the maximum proton dose was absorbed in the ZnO layer. Therefore, the investigation into the radiation hardness of proton-irradiated ZnO TFTs is non-trivial since the displacement damage induces drastic changes on the device characteristics based on the damage location.
关键词： ZnO,NIEL,Displacement damage,Thin-film transistors,Proton radiation effects
更新于2025-09-23 15:21:01
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Tests under irradiation of optical fibers and cables devoted to corium monitoring in case of severe accident in a Nuclear Power Plant
摘要： The DISCOMS project, which stands for “DIstributed Sensing for COrium Monitoring and Safety”, considers the potential of distributed sensing technologies, based on remote instrumentations and Optical Fiber Sensing cables embedded into the concrete floor under the reactor vessel, to monitor the status of this third barrier of confinement. This paper focuses on the selection and testing of singlemode (SM) optical fibers with limited RIA (Radiation Induced Attenuation) to be compliant with remote distributed instruments optical budgets, the ionizing radiation doses to sustain, and their reduction provided by the concrete basemat shielding. The tests aimed at exposing these fibers and the corresponding sensitive optical cables, to the irradiation doses expected during the normal operation of the reactor (up to 60 years for the European Pressurized Reactor), followed by a severe accident. Several gamma and mixed (neutron-gamma) irradiations were performed at CEA Saclay facilities: POSé?DON irradiator and ISIS reactor, up to a gamma cumulated dose of about 2 MGy and fast neutron fluence (E > 1 MeV) of 6 x 1015 n/cm2. The first gamma test permitted to assess the RIA at various optical wavelengths, and to select three radiation tolerant singlemode fibers (RIA < 5 dB/100 m, at 1550 nm operating wavelength). The second one was performed on voluminous strands of sensitive cables encapsulating selected optical fibers, up to approximately the same accumulated dose, at two temperatures: 30°C and 80°C. A significant increase of the RIA, without any saturation tendency, appeared for fibers inserted into cables, correlated with the increase of the hydroxyl attenuation peak at 1380 nm. Molecular hydrogen generated by the radiolysis of compounds of the cable is at the origin of this phenomenon. A third gamma irradiation run permitted to measure the radiolytic hydrogen production yield of some compounds of a dedicated temperature cable sample. The efficiency of a carbon coating layer over the silica cladding, acting as a barrier against hydrogen diffusion, was also successfully confirmed. Finally, the efficiency of this carbon coating layer has also been tested under neutron irradiation, then qualified as a protection barrier against hydrogen diffusion in the optical fiber cores.
关键词： carbon coating layer,radiation effects,optical fibers,hydrogen diffusion,gamma,radiolysis,rad-hard optical fiber,neutron,distributed measurement
更新于2025-09-23 15:21:01
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Heavily Irradiated 65-nm Readout Chip With Asynchronous Channels for Future Pixel Detectors
摘要： This paper discusses the main results relevant to the characterization of an analog front-end processor designed in view of experiments with unprecedented particle rates and radiation levels at the high-luminosity Large Hadron Collider (HL-LHC). The front-end channel presented in this paper is part of the CHIPIX65-FE0 prototype, a readout application-speci?ed integrated circuit designed in a 65-nm CMOS technology in the frame of the CERN RD53 collaboration. The prototype integrates a 64 × 64 pixel matrix, divided into two 32 × 64 submatrices, featuring squared pixels with 50-μm pitch, embodying two analog front-end architectures based on synchronous and asynchronous hit discriminators. This paper is focused on the characterization of the array with asynchronous channels, before and after exposure to ionizing doses up to 630 Mrad(SiO2) of X-rays. The analog chain takes a per-channel area close to 1000 μm2, with a power dissipation of around 5 μW. The mean value of the equivalent noise charge, not signi?cantly affected by radiation, is close to 100 electrons with no sensor connected to the front end. The threshold dispersion before irradiation is 55 electrons, for a tuned threshold of 600 electrons, with a moderate increase after irradiation. In-pixel analog-to-digital conversion, based on the time-over-threshold technique, is not appreciably in?uenced by the radiation as well. The assessed performance guarantees sub-1000 electrons stable threshold operations, which is a mandatory feature for highly ef?cient readout chips at the HL-LHC.
关键词： pixel readout,Analog front ends,electronic noise,CMOS processes,ionizing radiation effects
更新于2025-09-23 15:21:01
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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
摘要： The impact of the manufacturing process on the radiation induced degradation effects observed in CMOS image sensors at the MGy total ionizing dose levels is investigated. Moreover, the vulnerability of the partially pinned photodiodes at moderate to high total ionizing doses is evaluated for the first time to our knowledge. It is shown that the 3T standard partially pinned photodiode has the lowest dark current before irradiation, but its dark current increases to ~1 pA at 10 kGy(SiO2). Beyond 10 kGy(SiO2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8V MOSFETs exhibit the lower threshold voltage shift and the N MOSFETs are the most radiation tolerant. Among all the tested devices, 1.8V sensors achieve the best dark current performance. Several radiation-hard-by-design solutions are evaluated at MGy level to improve further the understanding of CIS radiation hardening at extreme total ionizing dose.
关键词： Gate Overlap,Radiation Effects,Drain,CMOS Image sensors,Partially Pinned Photodiode,Dark Current,TID,Threshold shift,RHBD
更新于2025-09-23 15:21:01
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Thermoluminescence of single wall carbon nanotubes synthesized by hydrogen-arc-discharge method
摘要： Single Wall Carbon Nanotubes (SWNT) synthesized by the hydrogen-arc-discharge method were tested as thermoluminescent (TL) material and found to be highly resistant to gamma radiation. Gamma irradiation of the as-prepared material with doses between 1 and 20 kGy induced changes on the morphology of the SWNT, such as nanoloops, as observed by Scanning Electron Microscopy. From X-ray diffraction, the as-prepared material shows content of various forms of carbon, including nanotubes, hexagonal carbon (graphite), and rhombohedral carbon too. The full width at half maximum (FWHM) of diffraction peaks remain practically unchanged after irradiation. The glow curves show a single TL peak centered at about 449 K. Because the complex structure of the glow curves, it seems that the TL signal could be produced by a trap distribution instead of a single level of traps. To dilucidate the mechanism responsible of glow curves and the value of activation energy of traps, kinetic parameters like Eeff, ?E, and s of experimental the glow curves have been analyzed using computerized glow curve deconvolution (CGCD) considering a continuous distribution of trapping levels, peak shape and initial rise methods, as well as heuristic equations. The measured TL dosimetric properties may be summarized as follows: (a) moderate reproducibility of the TL signal (coefficient of variation 24.87%); (b) main peak activation energy of 1.206 eV; (c) threshold dose of ~1 kGy; (d) TL-sensitivity of ~7.0x10-4; (e) human bone equivalence, i.e., high-Z material, Zeff =15 and, (f) wide linear range of TL dose-response in the range 0.170–2.5 kGy.
关键词： Radiation effects,kinetic property,thermoluminescence,carbon nanotubes,dosimetric material
更新于2025-09-23 15:21:01
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[IEEE 2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) - HangZhou, China (2018.9.5-2018.9.7)] 2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) - High-Efficiency Transmission-Type Digital Coding Metasurface for Metalens and Transmitarray
摘要： Field-programmable gate arrays (FPGAs) have been shown to provide high computational density and efficiency for many computing applications by allowing circuits to be customized to any application of interest. FPGAs also support programmability by allowing the circuit to be changed at a later time through reconfiguration. There is great interest in exploiting these benefits in space and other radiation environments. FPGAs, however, are very sensitive to radiation and great care must be taken to properly address the effects of radiation in FPGA-based systems. This paper will highlight the effects of radiation on FPGA-based systems and summarize the challenges in deploying FPGAs in such environments. Several well-known mitigation methods will be described and the unique ability of FPGAs to customize the system for improved reliability will be discussed. Finally, two case studies summarizing successful deployment of FPGAs in radiation environments will be presented.
关键词： radiation effects,radiation hardening,field programmable gate arrays,integrated circuit reliability,Fault-tolerant systems
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Orlando, FL, USA (2019.6.23-2019.6.29)] 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Pulsed RF Signal Irradiation Using a Low Voltage NLTL Coupled to a DRG Antenna
摘要： Field-programmable gate arrays (FPGAs) have been shown to provide high computational density and efficiency for many computing applications by allowing circuits to be customized to any application of interest. FPGAs also support programmability by allowing the circuit to be changed at a later time through reconfiguration. There is great interest in exploiting these benefits in space and other radiation environments. FPGAs, however, are very sensitive to radiation and great care must be taken to properly address the effects of radiation in FPGA-based systems. This paper will highlight the effects of radiation on FPGA-based systems and summarize the challenges in deploying FPGAs in such environments. Several well-known mitigation methods will be described and the unique ability of FPGAs to customize the system for improved reliability will be discussed. Finally, two case studies summarizing successful deployment of FPGAs in radiation environments will be presented.
关键词： radiation effects,radiation hardening,Fault-tolerant systems,integrated circuit reliability,field programmable gate arrays
更新于2025-09-23 15:19:57