研究目的
Investigating the displacement damage effect on the electrical characteristics of ZnO thin film transistors based on its location of origin in the device structure.
研究成果
The investigation demonstrated that the location of proton dose maxima significantly affects the displacement damage and, consequently, the electrical characteristics of ZnO TFTs. Devices with maximum proton dose at the ZnO/SiO2 interface showed significant degradation, while those with maximum dose in the ZnO layer exhibited negligible degradation. This highlights the importance of considering the damage location in the analysis of radiation hardness in semiconductor devices.
研究不足
The study focuses on the displacement damage effect based on the location of proton dose maxima within the device structure. The findings are specific to ZnO TFTs and may not be directly applicable to other semiconductor materials or device configurations.
1：Experimental Design and Method Selection:
The study involved preparing ZnO TFTs with two different passivation layer thicknesses to obtain maximum proton dose distribution in either the ZnO channel layer or ZnO/SiO2 interface. The devices were irradiated by a proton beam with an energy of 200 keV and 1 × 1014 protons/cm2 fluence. TRIM simulation and NIEL calculation were used to analyze the proton dose distribution profiles.
2：Sample Selection and Data Sources:
ZnO TFTs were fabricated on thermally oxidized highly p-doped Si wafers with a SiO2 dielectric layer. The ZnO channel layer was deposited by rf magnetron sputtering.
3：List of Experimental Equipment and Materials:
Equipment included a 2 MV Tandem source Pelletron accelerator for proton irradiation, rf magnetron sputtering system for ZnO deposition, and a Keithley 6517 voltage source for electrical measurements.
4：Experimental Procedures and Operational Workflow:
The devices were irradiated at room temperature, and electrical characteristics were measured before and after irradiation. Raman spectroscopy was used for structural analysis.
5：Data Analysis Methods:
The VTH shift and subthreshold swing were analyzed to understand the impact of displacement damage on device characteristics.
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