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Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells
摘要： Reactive sputtered boron-doped zinc oxide (BZO) film was deposited from argon, hydrogen and boron gas mixture. The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target. Textured surface was obtained in the as-deposited films. The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio. By varying the gas concentration ratio, the best obtained resistivity ~ 6.51×10-4 Ω-cm, mobility ~ 19.05 cm2 V-1 s-1 and sheet resistance ~ 7.23 Ω/□ were obtained. At lower wavelength of light, the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are >85%. We also fabricated amorphous silicon (a-Si) thin film solar cell on the best obtained BZO layers. The overall efficiency of the a-Si solar cell is 8.14%, found on optimized BZO layer.
关键词： amorphous silicon,BZO,solar cells,Zinc oxide (ZnO),Magnetron reactive sputtering
更新于2025-09-12 10:27:22
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Photo-electrochemical stability of copper oxide photocathodes deposited by reactive high power impulse magnetron sputtering
摘要： Copper oxide thin films were deposited by a reactive high power impulse magnetron sputtering (r-HIPIMS) on glass substrates with a SnO2:F (FTO) layer. The pulse magnetron discharge was analyzed via the radio frequency (RF) Sobolewski probe, used for the time-resolved measurement of ion flux density on the substrate. Pulsed discharge current and voltage waveforms were analyzed. It was found that the pulse magnetron discharge worked in a self-sputtering mode with a stable or slightly growing discharge current after pulse discharge stabilization. As-deposited copper oxide films exhibited a certain degree of crystallinity, as identified by XRD, which was further improved after postdeposition annealing at 550 oC in the air. After annealing, the mixture of CuO and Cu2O crystallites was usually found in the films and in a few cases CuO0.96 phase was detected. Deposited films exhibited a p-type conductivity and relatively high photocurrents in the cathodic region after the postdeposition annealing. The highest photocurrent density of ip ≈ 1.1 mA cm-2 at potential -500 mV vs. Ag/AgCl was detected for films with a thickness of 1200 nm.
关键词： magnetron discharge,photocurrent,high power impulse magnetron sputtering,reactive sputtering,copper oxide,photocathode
更新于2025-09-10 09:29:36
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V2O5 Thin Films as Nitrogen Dioxide Sensors ?
摘要： Vanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Thickness of the films was determined by the profilometry. It has been confirmed by GIXD that the deposited films are composed of V2O5 phase. The gas sensing properties of V2O5 thin films were investigated at temperatures from range 410–617 K upon NO2 gas of 4–20 ppm. The investigated material exhibited good response and reversibility towards nitrogen dioxide. The effect of metal-insulator transition (MIT) on sensor performance has been observed and discussed for the first time. It was found that a considerable increase of the sensor sensitivity occured above 545 K, which is related to postulated metal-insulator transition.
关键词： reactive sputtering,vanadium pentoxide,metal-insulator transition (MIT),electrical properties,thin film,gas sensor,nitrogen dioxide
更新于2025-09-10 09:29:36
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Optical properties of p-type SnOx thin films deposited by DC reactive sputtering
摘要： Refractive index (n), extinction coefficient (k), effective complex dielectric function (ε) and band gap energy (Eg) of p-type SnOx thin films from 0.75 to 4 eV are studied. 25 nm thick films were deposited by direct current (DC) magnetron sputtering in reactive argon and oxygen atmosphere at different relative oxygen partial pressure (OPP) followed by a post annealing treatment at 250 °C in air atmosphere for 30 min. The relative high Hall effect mobility (μ) of the SnOx was attributed to the dominant SnO phase in films grown at 15% OPP. Films deposited at 5 and 11% OPP showed incomplete Sn oxidation resulting in a mixture of Sn and SnO phases with lower hole mobility. Optical transmittance (T) and reflectance (R) are described by assuming a model where the p-type SnOx films are defined by a dispersion formula based on a generalization of the Lorentz oscillator model. The roughness of the films (r) was modeled by a Bruggeman effective medium approximation (BEMA). From the optical analysis, k in the visible spectral region show high values for films with phase mixture, while films with single SnO phase presented negligible values. Films with single SnO phase have low n, this latter result from the lower compact microstructure of these films. Also, energies associated to direct and indirect transitions of the Brillouin zone of the SnOx films were identified from the evaluated ε. Finally, the increase in the values of Eg energy was related to the increase in the SnO phase.
关键词： p-type SnOx,optical properties,Hall effect mobility,thin films,DC reactive sputtering
更新于2025-09-10 09:29:36
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Role of the reactive sputtering deposition power in the phase control of cobalt oxide films
摘要： The influence of the reactive magnetron sputtering deposition power on determining the stoichiometry and structure of cobalt oxide polycrystalline films is investigated using experimental and simulated data. Direct current discharges with powers in the 80–240 W range are tested using a metallic Co target and an Ar + O2 plasma. X-ray diffraction results show that lower deposition powers favor the spinel Co3O4 phase, while higher powers produce films presenting the rocksalt CoO phase. Computer simulations indicate that lower power processes occur in the poisoned target regime, while higher power depositions favor the metallic target regime. Consistent with the simulations, oxygen optical emissions (OI = 777:3 m) from the plasma show a significant decrease while the cobalt emissions (e.g., the CoI = 340:5 nm line) are significantly increased when the deposition power is increased. The results show that the film stoichiometry and structure are directly related to the deposition power, at constant O2 flow.
关键词： optical emissions,deposition power,X-ray diffraction,reactive sputtering,cobalt oxide,phase control
更新于2025-09-10 09:29:36