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Polar surface dominated octagonal Sn doped ZnO nanowires and their room-temperature photoluminance properties
摘要： Polar surface dominated Sn doped ZnO nanowires (NWs) with an octagonal shaped cross section have been fabricated by chemical vapor deposition method. The NWs grew along [01 0] direction, and were wrapped by non-polar surface (2 0) and polar surfaces (0001) and (1 1). Planar defects in (0001) plane were formed in the middle of the doped NWs, and strain concentration occurred around the planar defects, which might lower the energy in the wurtzite lattice and thus maintain polar surface dominated configuration. X-ray photoelectron spectroscopy (XPS) and Raman tests reveal that the concentration of Oxygen vacancy (VO) was significantly lowered after doping, which led to the reduced deep level emission (DLE).
关键词： Polar surface,Photoluminance,Sn-doped ZnO Nanowires,Microstructure
更新于2025-09-23 15:23:52
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Enhancement of multi-photon Raman scattering and photoluminescence emission from Li-doped ZnO nanowires
摘要： Uniform Li-doped ZnO nanowires have been fabricated by thermal evaporation method. The ZnO formation and the Li incorporation have been discussed and the formation path of preparation products has also been explained in terms of the stability of Zn and Li vapor in an aerobic atmosphere. The strongest vibration mode at 437.2 cm?1 in the multi-photon Raman scattering of the as-prepared products at room temperature indicates that the Li-doped ZnO nanowires still keep the hexagonal (wurtzite) structure. Raman spectra of Li-doped ZnO with different doping concentrations confirm that the variation of Raman peaks in the range of 550 cm?1～650 cm?1 is caused by the doping of lithium. The photoluminescence property at room temperature shows a blue-shift compared with undoped ZnO in the ultraviolet region. The Gauss fitting analyzed results indicate that the broad-band is composed of one green luminescence (GL) band, one yellow luminescence (YL) band, and one red luminescence (RL) band, respectively. The GL (2.447 eV) could be attributed to the singly ionized oxygen vacancies. The origin of the YL (2.245 eV) could be assigned to the transition of an electron from the conduction band (or a shallow donor) to the Li acceptor level. The RL (1.977 eV) could be assigned to the transitions between a shallow donor (at low temperature) or the conduction band (at higher temperature). Furthermore, the luminescence spectra at low temperature confirm the increase of defect levels like oxygen vacancies.
关键词： li-doped ZnO nanowires,formation process,photoluminescence,multi-photon raman scattering
更新于2025-09-23 15:23:52
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Synthesis, characterization and UV photodetector application of Sb-doped ZnO nanowires
摘要： Sb-doped ZnO nanowires with hexagonal wurtzite structures have been synthesized via chemical vapor deposition method, and the main charge state of Sb dopants is Sb5+. The photoluminescence spectra demonstrate the existence of shallow acceptors, SbZn-2VZn complexes in all probability. On the other hand, Sb doping caused more native and impurity donors in Sb-doped ZnO nanowires. Then, field effect transistors of single Sb-doped ZnO nanowire were fabricated and the transport properties shows n-type conductivity. The competition between shallow acceptors and donors, and the influence of Sb valency need to be investigated further to obtain stable Sb-doped p-type ZnO. At last, we have shown the potential application of Sb-doped ZnO nanowires for nanoscale UV photodetector.
关键词： field effect transistors,UV photodetector,Sb-doped ZnO nanowires,photoluminescence,chemical vapor deposition
更新于2025-09-16 10:30:52