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Characteristics
摘要： In this paper, a novel insulated gate triggered thyristor with the Schottky barrier (SB-IGTT) is proposed for improved the repetitive pulse life and high-di/dt characteristics. Different from the conventional cathode shorted MOS-controlled thyristor (CS-MCT), an SB is specially imbedded to enlarge the effective turn-on area and enhance the electron–hole plasma spread during short duration pulse, which contributes significantly to relaxing the thermal concentration and improving the repetitive pulse life as well as achieves superior di/dt characteristics. The experimental results show that the proposed SB-IGTT continuously undergoes more than 220 000 shots at the pulse frequency of 5 Hz, yielding a 10× longer repetitive pulse life than the conventional CS-MCT. Simultaneously, SB-IGTT performs a di/dt up to 120 kA/μs with peak current near 10 kA, increasing di/dt by about 20%. Improved repetitive pulse life and simultaneous superior di/dt characteristics indicate that the proposed SB-IGTT is suitable for repetitive pulse power applications.
关键词： High di/dt,Schottky barrier (SB),insulated gate thyristor,pulse power,repetitive pulse life
更新于2025-09-19 17:15:36
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Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis
摘要： The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut plates was varied in a range of 2 × 1015–3 × 1017 cm–3 by varying the concentration of boron in the growth mixture (0.0004–0.04 at %). Thin rectangular plates with the uniform concentration of boron and free from extended structural defects are cut out by a laser after the X-ray topography and mapping of UV luminescence. The concentrations of donors and acceptors in the samples are calculated from the data of the Hall effect and capacitance–voltage characteristics. The obtained results correlate with the concentration of boron in the growth mixture. The minimum compensation ratio of acceptors with donors (below 1%) is observed in the crystals grown with the concentration of boron in the growth mixture of 0.002 at %. The ratio increases when the amount of boron is increased or decreased. The samples grown at such a concentration of boron have the maximum mobility of charge carriers (2200 cm2/(V s) at T = 300 K and 7200 cm2/(V s) at T = 180 K). The phonon scattering of holes dominates throughout the range of temperatures (180–800 K), while the scattering by point defects (neutral and ionized atoms of the impurity) is insignificant. The diamond crystals which are grown from a mixture containing 0.0005–0.002 at % boron and have perfect quality and a lattice mechanism of scattering can be considered as a reference semiconductor.
关键词： Schottky barrier diode,semiconductor diamond,electrical properties
更新于2025-09-19 17:15:36
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Enhanced gas-sensing performance of metal@ZnO core–shell nanoparticles towards ppb–ppm level benzene: the role of metal–ZnO hetero-interfaces
摘要： Core–shell metal@ZnO nanoparticles including Au@ZnO, Pd@ZnO and Pt@ZnO were synthesized and utilized for sensing low-concentration benzene. Various techniques were used to characterize the compositional properties of the typical core@shell structure and analyze the relation between the sensing properties and the metal–ZnO hetero-interfaces. When applied as gas-sensing materials, all three core–shell metal@ZnO nanoparticles showed better sensing performance than pure ZnO nanoparticles towards low concentration benzene. In particular, the gas-sensing response of the Pt@ZnO core–shell nanoparticles was 7 times higher than that of pure ZnO towards 0.1 ppm benzene and 63 times higher towards 5 ppm benzene, which was more sensitive than most gas-sensing materials in previous literature. Furthermore, the Pt@ZnO core–shell nanoparticles presented an ultra-low detection limit of no less than 10 ppb, which was lower than those of most gas-sensing materials in previous literature. Besides, the Pt@ZnO core–shell nanoparticles showed high selectivity and long-term response stability with a response value of 2.7 ± 1.6% towards 1 ppm benzene after operating for a month. The enhanced gas-sensing performances of the metal@ZnO core–shell nanoparticles are well correlated to the work function differences between the contacted metal and ZnO within the metal–ZnO hetero-interfaces, which produce high Schottky energy barriers and modulate the electron transfer.
关键词： gas-sensing,Schottky barrier,core–shell nanoparticles,benzene,metal–ZnO hetero-interfaces
更新于2025-09-19 17:15:36
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Reconfigurable Surface Plasmon Resonance Photodetector with a MEMS Deformable Cantilever
摘要： Plasmonic photodetectors have many useful characteristics, such as wavelength- or polarization-specific photodetection. Although reconfigurable plasmonic structures have been intensively studied, reconfiguration of the optical characteristics of a plasmonic photodetector has not yet been reported. Here, we report a gold diffraction-grating-type plasmonic photodetector that reconfigures its optical characteristics with a MEMS deformable cantilever. By reconfiguring the photodetector characteristics using an angular scan of the cantilever over ?21 ~ 21 degrees, the peak shifts of the photocurrent signal waveform are found to depend on the wavelength over 1200 nm ~ 1500 nm, which is consistent with SPR theory. The proposed reconfigurable plasmonic photodetector allowed us to obtain spectroscopic information of the light in a demonstration experiment.
关键词： Schottky-barrier,Surface Plasmon Resonance,MEMS,Near-infrared light,Spectrometer,Photodetector
更新于2025-09-19 17:13:59
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Laser-Tuned Large Photo Hall Effect in p-Type Silicon Based on Surface States
摘要： The photo Hall e?ect (PHE) has attracted much attention for a long time due to its broader application in photosensitive semiconductor devices. In this paper, we show a PHE observed in p-type silicon induced by pointolite irradiation, which di?ers from the conventional PHE caused by a surface light source. The Hall voltage is improved by 63 times when a laser is applied at the edge of the sample, and it presents good position-sensitive properties when the laser spot moves along the middle line of the sample. An ultra-broadband spectral responsivity is observed from 405 to 980 nm at 150?300 K. The experimental result shows that the laser-induced photo Hall voltage is not the simple superposition of photo current and dark current. Interestingly, this PHE can be greatly deteriorated when the surface state is destroyed and partially replaced by a Schottky barrier via covering with a thin Ag nano?lm. We attribute this phenomenon to the surface band bending caused by charged surface states. Compared with the traditional PHE, this laser-induced, position-sensitive, large-tuned-range e?ect based on surface states provides a di?erent approach to reveal the transmission properties of local unevenly distributed non-balanced carriers and can be used to design light-sensitive Hall devices.
关键词： photo Hall e?ect,surface states,recombination rate,magnetic ?eld,Schottky barrier
更新于2025-09-19 17:13:59
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Superior photoresponse MIS Schottky barrier diodes with nanoporous:Sna??WO <sub/>3</sub> films for ultraviolet photodetector application
摘要： Highly ordered nanoporous structure based MIS type photo-detector is a promising device for next-generation optoelectronic applications due to their excellent light absorption, better mechanical strength, low density with larger diffusion coefficient and charge accommodation ability. Here, we fabricated a highly sensitive MIS Schottky barrier diodes by sandwiching nanoporous:Sn-WO3 films as interfacial layer prepared by jet nebulizer spray pyrolysis technique. XRD confirmed the polycrystalline nature with monoclinic and orthorhombic phase of Sn-WO3 films, whose crystallite size gradually increased with Sn concentration. FE-SEM of Sn-WO3 composite films with 12 wt% of Sn exhibited unique surface morphology of nanoplate, nanowire and nanoporous-like structure. Optical band gap energy improved from 3.2 to 3.6 eV with Sn concentration. Establishing the nanoporous structure of Sn-WO3, we are the first to report on the photo-diode properties of Cu/nanoporous:Sn-WO3/p-Si diodes which recorded a positive photo-response with higher reverse saturation current under illumination. It is supported through enhanced detectivity of the interface layer with increasing Sn concentration. We have achieved an ultra-high responsivity of 5083.5 mA/W for the diode fabricated with 12 wt% of Sn, which is 154 times higher than pure WO3. The presence of nanoporous:Sn-WO3 layer in MIS diode recorded ~60% quantum efficiency making it ideal for the ultra-violet photo-detector application.
关键词： MIS Schottky barrier diodes,Sn-WO3,photo-detector,nanoporous,ultra-violet
更新于2025-09-19 17:13:59
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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
摘要： The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, ?ow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic pro?le of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10?8 A/cm2 at ?10 V.
关键词： quasi-vertical,inductively coupled plasma (ICP),GaN,dry etch,sidewall pro?le,mesa,Schottky barrier diode (SBD)
更新于2025-09-19 17:13:59
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[IEEE TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) - Kochi, India (2019.10.17-2019.10.20)] TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) - An Alternative Approach to Voltage Dependent Reduction of Schottky Barrier Height Modeling in Two Dimensional MSM Photodetectors
摘要： Current-voltage (I-V) characteristics of a two dimensional MSM photodetector can be explained by modified thermionic emission diffusion (TED) theory. The theory assumes that Schottky barrier height (SBH) decreases linearly with bias voltage and hence voltage dependent reduction of SBH is understood in term of a series resistance (Rs) and ideality factor (n). Characterization of Rs and n can be done from dV d(lnI) vs I plot. However, in this paper we are presenting an alternative approach to understanding characteristics of voltage dependent reduction of SBH. We are proposing an exponential relationship between reduction of SBH and bias voltage to understand non ideality of Schottky junctions. By applying this relationship directly into the Richardson-Dushman equation photocurrents of different Transition-Metal Dichalcogenides(TMD) based devices can be estimated analytically. This model offers a simplistic approach for understanding non ideal behaviour of Schottky barrier height. Using this model we have calculated I-V characteristics of four different TMD based photodetectors under illumination as reported in literature. We have observed good agreement of our calculated results with experimental values. Mean absolute error in each of the cases was found to be not more than 6% in these calculations.
关键词： Perovskite,Voltage Dependent Schottky Barrier Height,Transition-Metal Dichalcogenide,Photodetector
更新于2025-09-16 10:30:52
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Au Grating on SiC Substrate: Simulation of High Performance Plasmonic Schottky Barrier Photodetector in Visible and NIR Regions
摘要： Plasmonically enhanced light absorption in Schottky barrier photodetectors (PDs) can be achieved by engineering metallic nanostructures. In this context, gold (Au) gratings on titanium (Ti)/silicon carbide (SiC) based Schottky barrier is proposed in this work for photodetection application. Further, the effects of various grating parameters and incident angle on absorbance are demonstrated. The grating based structure is able to provide ~85% incident light absorption leading to a significantly high responsivity value as compared with that of conventional (without metallic grating) structure. High unbiased responsivity values of 4.396 mA/W and 2.496 mA/W are obtained for Au/Ti/6H-SiC Schottky barrier PD at wavelengths of 694.5 nm and 1035 nm, respectively based on Fowler’s model. In view of advanced properties of SiC, the present work will open new opportunities for plasmonic PDs based on SiC platform.
关键词： plasmons,Schottky barrier,photodetector,responsivity,gold gratings
更新于2025-09-16 10:30:52
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Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe2 defects implication
摘要： Using temperature-dependent measurements and device modeling, we systematically study the e?ective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge con?gurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion e?ciency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge ?lms on the back-contact device characteristics. Based on empirical results, modeling is performed for the in?uence of MoSe2 defects on the e?ective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% con?dence-level. The conversion e?ciency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.
关键词： Schottky barrier,Thin ?lm solar cells,CZTSe,Kesterite,Back-contact,Ge nanolayer
更新于2025-09-12 10:27:22