研究目的
To systematically study the effective back-contact barrier of CZTSe devices to improve the property of the back-contact interface and understand the impact of nanoscale Ge films on the back-contact device characteristics.
研究成果
Incorporating thin Ge nanolayer at the interface between the absorber and MoSe2 improves the back-contact property by reducing the Schottky barrier, leading to an efficiency improvement of up to 8.3%. The defect concentration of MoSe2 significantly influences the property of back-contact barriers, and reducing these defects lowers the effective back-contact barrier.
研究不足
The study focuses on the back-contact interface property improvement with nanoscale Ge incorporation, but the exact recombination mechanism of CZTSe devices requires further studies. The impact of Ge nanolayer on the grain boundary improvement might mislead the interpretation of the back-contact impact.
1：Experimental Design and Method Selection:
Temperature-dependent measurements and device modeling were used to study the back-contact barrier. DC magnetron sputtering was employed to fabricate CZTSe: nanolayer Ge devices.
2：Sample Selection and Data Sources:
CZTSe devices with various nanoscale Ge configurations were compared. Critical device parameters were characterized.
3：List of Experimental Equipment and Materials:
DC magnetron sputtering system, CRX-4 K cryogenic probe station, Keysight B1500, Keithley 2400 Sourcemeter, Sun 3000 solar simulator.
4：Experimental Procedures and Operational Workflow:
Fabrication of CZTSe: nanolayer Ge devices, characterization of device performance, and temperature-dependent measurements.
5：Data Analysis Methods:
Modeling and Sentaurus TCAD simulation were performed to analyze the influence of MoSe2 defects on the effective back-contact barrier.
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