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Temperature dependent electrical properties of AlN/Si heterojunction
摘要： AlN is an integral part of many Si based electronic, optoelectronic, and electromechanical devices. The transport of charge carriers and their recombination at the AlN (0002)/Si (111) interface become crucial for the performance and reliability of such devices. In this work, we have studied the temperature dependent current-voltage (I-V-T) characteristics of AlN/Si heterojunctions to gain a deeper understanding. The analysis of the I-V-T characteristics interestingly suggested a temperature dependent turn-on voltage in the forward bias of the Schottky barrier. Also, the Schottky barrier itself was found to be temperature dependent as expected. We have qualitatively explained the temperature dependence of the turn-on voltage in terms of trap states at the AlN/Si heterojunction.
关键词： electrical properties,temperature dependent,AlN/Si heterojunction,Schottky barrier,trap states
更新于2025-09-10 09:29:36
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Statistical Analysis of the Current–Voltage ( <i>I</i> – <i>V</i> ) and Capacitance–Voltage ( <i>C</i> – <i>V</i> ) Characteristics of the Au/Ir/ <i>n</i> -InGaN Schottky Barrier Diodes
摘要： In the present work, 20 Au/Ir/n-InGaN Schottky barrier diodes (SBDs) are fabricated using a electron beam evaporation technique. The Schottky barrier parameters such as ideality factor (n), Schottky barrier height (SBH) ((cid:2)b(cid:3) and donar concentration (Nd (cid:3) values are determined by current–voltage (I–V ) and capacitance–voltage (C–V ) measurements at room temperature. From I–V measurements, the statistical distribution of data gives the mean SBH value of 0.70 eV with a normal deviation of 10 meV and mean ideality factor value of 1.50 with a normal deviation of 0.0478. Two important parameters such as series resistance (RS(cid:3) and shunt resistance (cid:3) are also evaluated from the I–V characteristics. Furthermore, Norde and Cheung’s methods are used to evaluate the SBH, ideality factor and series resistance. The statistical distribution of C–V data gives the mean SBH value of 0.91 eV with a normal deviation of 12 meV and mean donar concentration of 0.71 × 1017 cm?3 with a normal deviation of 0.018 × 1017 cm?3, respectively.
关键词： Series Resistance,Schottky Barrier Height,Ideality Factor
更新于2025-09-09 09:28:46
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Modulation of electronic properties and Schottky barrier in the graphene/GaS heterostructure by electric gating
摘要： In this work, the structure, electronic properties, and the Schottky barrier of the van der Waals heterostructure (vdWH) based on graphene and gallium sulfide (GaS) have been theoretically considered using density functional theory. We found that the graphene/GaS vdWH keeps the extraordinary intrinsic properties of both the graphene and GaS monolayer. Moreover, an n-type Schottky contact with a small Schottky barrier of 0.51 eV was formed in the ground state of the heterostructure. Especially, our results demonstrated that applying an electric gating can tune effectively the Schottky barrier and contact types. The transformations from the n-type Schottky contact to the p-type one and from the Schottky to the Ohmic contacts were observed in the vdWH under electric gating. These results propose a great potential for the van der Waals heterostructure in future nanoelectronic and optoelectronic devices.
关键词： Electric gating,Gallium Sulfide,Schottky barrier,Graphene
更新于2025-09-09 09:28:46
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Design, development and use of the spectrometer for investigating coherent THz radiation produced by micro-bunching instabilities at Diamond Light Source
摘要： Schottky barrier diodes (SBDs) are known for their low noise, ultra-fast response and excellent sensitivity. They are often implemented as detectors in the millimetre wavelength regime. Micro-bunch instabilities (MBI) have been detected at many light sources around the world including the Diamond Light Source, UK. These MBI can result in bursts of coherent synchrotron radiation (CSR) with millimetre wavelengths. More research needs to be carried out with regards to the dynamics of MBI in order to con?rm the simulations and to eventually harness the power of the CSR bursts. A single shot spectrometer has been designed and is under operation at the Diamond Light Source (DLS). It is composed of eight SBDs ranging from 33-1000 GHz. Unlike previous measurements carried out, each of the SBDs has been individually characterised thus making the results obtained comparable to simulations. In this paper, we present the assessment of each SBD in the spectrometer and the ?rst results of the spectrometer’s use in the beam.
关键词： Schottky barrier diodes,micro-bunch instabilities,spectrometer,coherent synchrotron radiation,Diamond Light Source
更新于2025-09-09 09:28:46
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Microfluidic-enhanced 3-D photoanodes with free interfacial energy barrier for photoelectrochemical applications
摘要： The sluggish reaction kinetics and poor interfacial mass transfer seriously limit the industrial applications of planar photoelectrocatalytic devices. Here, the principle of 3-D flow-through photoanodes with free interfacial barrier for electron transfer and microfluidic channels for reactant transportation was demonstrated. Owing to the epitaxial growth of anisotropic ZnO nanorods with internal electrostatic field onto carbon cloth (CC), the spatial separation of photo-induced charge carriers was realized. Experimental characterizations confirmed the formation of Schottky-barrier-free interface with low electrical resistance for electron transfer, resulting in the significantly decreased onset potential. Compared to traditional planar FTO/ZnO photoanodes, flow-through CC/ZnO photoanodes exhibited 4 times (for Rhodamine B) and 3 times (for bisphenol A) higher degradation kinetics. Fluid dynamics simulation suggested that the flow-through mode greatly enhanced the microscale velocity magnitude and the mass transfer of reactants. Thus, this work presents an ideal platform for the design of 3-D microfluidic-enhanced system for photoelectrochemical applications.
关键词： Mass transfer,Flow-through photoanodes,Internal electrostatic field,Schottky barrier,Photoelectrochemical
更新于2025-09-04 15:30:14
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Tunable Direct Semiconductor Gap and High Carrier Mobility of Mo <sub/>6</sub> Br <sub/>6</sub> S <sub/>3</sub> Monolayer
摘要： Two-dimensional materials with direct semiconductor gaps and high mobilities can play an important role in future electronic and optical applications. Here we propose that Mo6Br6S3 monolayer as a new two-dimensional material is stable and can be exfoliated from corresponding layered bulk. Our first-principles results show that the monolayer has a direct semiconductor gap beyond 1 eV (between PBE and HSE values) and a very high electron mobility (6880 cm2V?1s?1), and these can be tuned through in-plane strain by applying uniaxial stress. Furthermore, we show that the Mo6Br6S3/graphene heterostructure makes a p-type Schottky barrier and the amplitude of band bending (0.03 eV) is extremely low compared to other similar junctions because the Mo6Br6S3 monolayer has a close work function to graphene. With all these useful properties and functions, the Mo6Br6S3 monolayer can be very promising for nanoelectronic and optical applications.
关键词： Mo6Br6S3 monolayer,p-type Schottky barrier,optical applications,Two-dimensional materials,electron mobility,high mobilities,first-principles,direct semiconductor gaps,nanoelectronic
更新于2025-09-04 15:30:14
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Effect of a-Si thin film on the performance of a-Si/ZnO-stacked piezoelectric energy harvesters
摘要： In this letter, we present the fabrication and characterization of a zinc oxide (ZnO)-based nanogenerator for piezoelectric micro-energy harvesting by combining thin films of amorphous silicon (a-Si) and ZnO. We utilized the a-Si thin film as an interlayer to assemble several a-Si/ZnO-stacked piezoelectric nanogenerators (SZPNGs) on indium tin oxide (ITO)-coated polyethylene naphthalate substrates. We investigated the influence of the a-Si layer thickness on the output voltages of the SZPNGs and demonstrated the existence of an optimal a-Si thickness for maximizing the output voltage. Overall, the SZPNGs generated higher output voltages than a conventional ZnO-based piezoelectric nanogenerator (ZPNG) lacking an a-Si interlayer, indicating enhanced performance. In particular, the SZPNG based on the optimal a-Si thickness exhibited a sixfold higher output voltage compared with the conventional ZPNG. This improved performance was ascribed to a combination of the Schottky barrier at the ITO/a-Si interface, preventing the screening effect and the relatively high dielectric constant (er≈13) of a-Si, minimizing the loss of the piezoelectric potential induced in the ZnO layer. The results herein are expected to assist the development of even more advanced ZnO-based piezoelectric nanogenerators in the future.
关键词： piezoelectric energy harvesting,zinc oxide,amorphous silicon,Schottky barrier,nanogenerator
更新于2025-09-04 15:30:14