研究目的
To fabricate and characterize Au/Ir Schottky contacts on n-type InGaN, investigating the electrical properties by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature.
研究成果
The electrical properties of Au/Ir/n-InGaN SBDs were successfully investigated, revealing mean SBH and ideality factor values from I–V measurements, and higher SBH values from C–V measurements. The study provides insights into the conduction process and barrier formation at the metal-semiconductor interface, suggesting further investigation over a wide temperature range for detailed analysis.
研究不足
The study is limited to room temperature measurements. The discrepancy in SBH values obtained from I–V and C–V measurements suggests the presence of trap states, image force effects, and barrier inhomogeneities.
1：Experimental Design and Method Selection:
Fabrication of 20 Au/Ir/n-InGaN Schottky barrier diodes using electron beam evaporation technique. Electrical properties investigated through I–V and C–V measurements.
2：Sample Selection and Data Sources:
n-InGaN samples with 10% indium composition used.
3：List of Experimental Equipment and Materials:
Electron beam evaporation system, Keithley source measure unit (Model No: 2400), deep level transient spectrometer (DLS-83D).
4：Experimental Procedures and Operational Workflow:
Cleaning of samples, deposition of Ti/Al ohmic contacts and Au/Ir Schottky contacts, annealing, and electrical measurements.
5：Data Analysis Methods:
Statistical analysis of I–V and C–V data using Gaussian distribution, application of Norde and Cheung’s methods for parameter extraction.
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