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Graphene quantum dots enhanced ToF-SIMS for single-cell imaging
摘要： Time-of-flight secondary ion mass spectrometry (ToF-SIMS) has shown promising applications in single-cell analysis owing to its high spatial resolution molecular imaging capability. One of the main drawbacks hindering progress in this field is the relatively low ionization efficiency for biological systems. The complex chemical micro-environment in single cells typically causes severe matrix effects, leading to significant signal suppression of biomolecules. In this work, we investigated the signal enhancement effect of graphene quantum dots (GE QDs) in ToF-SIMS analysis. A × 160 magnification of ToF-SIMS signal for amiodarone casted on glass slide was observed by adding amino-functionalized GE QDs (amino-GE QDs), which was significantly higher than adding previously reported signal enhancement materials and hydroxyl group-functionalized GE QDs (hydroxyl-GE QDs). A possible mechanism for GE QD-induced signal enhancement was proposed. Further, effects of amino-GE QDs and hydroxyl-GE QDs on amiodarone-treated breast cancer cells were compared. A significant signal improvement for lipids and amiodarone was achieved using both types of GE QDs, especially for amino-GE QDs. In addition, ToF-SIMS chemical mapping of single cells with better quality was obtained after signal enhancement. Our strategy for effective ToF-SIMS signal enhancement holds great potential for further investigation of drug metabolism pathways and the interactions between the cell and micro-environment.
关键词： Signal enhancement,Single-cell analysis,Graphene quantum dots,Time-of-flight secondary ion mass spectrometry
更新于2025-11-14 15:32:45
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Li Permeability Increase in Nano-Sized Amorphous Silicon Layers
摘要： Li permeation through nano-sized amorphous Si layers is investigated for temperatures up to 500°C (773 K) as a function of layer thickness between 12 and 95 nm. For the experiments the Si layers are embedded between 6Li and 7Li isotope enriched oxide based Li reservoirs and the thermally induced isotope exchange (through silicon layers and interfaces) is analyzed by Secondary Ion Mass Spectrometry in order to calculate Li permeabilities. The experiments reveal that the interface between silicon and the Li metal oxide does not hinder Li permeation and Li diffusion in silicon controls the overall process. The determined Li permeability increases drastically by orders of magnitude with decreasing silicon layer thickness, accompanied by a decrease in the activation enthalpy of Li permeation. These results can be explained by a gradual transition of trap-limited slow Li diffusion at high silicon thicknesses to interstitial fast Li diffusion at low Si thicknesses.
关键词： Li permeation,nano-sized layers,Li permeability,trap-limited diffusion,amorphous silicon,Secondary Ion Mass Spectrometry,isotope exchange,interstitial diffusion
更新于2025-09-23 15:21:21
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Low temperature platinum chemical vapor deposition on functionalized self-assembled monolayers
摘要： The reaction pathways of Pt CVD using (COD)PtMe2 – xClx (x = 0, 1, 2) have been investigated on functionalized self-assembled monolayers (SAMs) as models for organic substrates. Residual gas analysis for (COD)PtMe2 and (COD)PtMeCl is consistent with the loss of methyl radicals as the initial step in deposition, while for (COD)PtCl2, the first step is the loss of a chlorine radical. It is further shown using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry that the deposition process leads to chemical damage of the SAM layer and little Pt deposition. Using this understanding, it is demonstrated that the Pt CVD rate can be controlled using a radical trap. In the presence of 1,4-cyclohexadiene, a well-known alkyl radical trap, Pt deposition was increased by 5× to 10×, creating a room-temperature effective Pt CVD process.
关键词： time-of-flight secondary ion mass spectrometry,x-ray photoelectron spectroscopy,Pt CVD,chemical vapor deposition,self-assembled monolayers,radical trap
更新于2025-09-23 15:21:01
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Investigating the Effects of Chemical Gradients on Performance and Reliability within Perovskite Solar Cells with TOF-SIMS
摘要： Time-of-flight secondary-ion mass spectrometry (TOF-SIMS), a powerful analytical technique sensitive to all components of perovskite solar cell (PSC) materials, can differentiate between the various organic species within a PSC absorber or a complete device stack. The ability to probe chemical gradients through the depth of a device (both organic and inorganic), with down to 100 nm lateral resolution, can lead to unique insights into the relationships between chemistry in the absorber bulk, at grain boundaries, and at interfaces as well as how they relate to changes in performance and/or stability. In this review, the technique is described; then, from the literature, several examples of how TOF-SIMS have been used to provide unique insight into PSC absorbers and devices are covered. Finally, the common artifacts that can be introduced if the data are improperly collected, as well as methods to mitigate these artifacts are discussed.
关键词： perovskite solar cells,time-of-flight secondary-ion mass spectrometry,performance,degradation
更新于2025-09-23 15:19:57
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Epitaxial n++-InGaAs ultra-shallow junctions for highly scaled n-MOS devices
摘要： High electron mobility III-V semiconductors like InGaAs are excellent candidates for sub-10 nm n-metal-oxide-semiconductor (nMOS) devices. One of the critical challenges in downscaling III-V devices is achieving low-resistance contacts by forming low-defect, ultra-shallow junctions < 9 nm in depth, with n-type dopant concentrations above 1019 cm?3. In the current study, we combine time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profile analysis, atomic force microscopy (AFM) imaging, and high-resolution transmission electron microscopy (HR-TEM) to determine the optimal doping strategy for growing Si-doped n++-In0.25Ga0.75As ultra-shallow junctions by molecular beam epitaxy. We test three different approaches to doping: homogeneous co-deposition, single δ-layer (continuous) doping, and triple δ-layer (pulsed) doping. We demonstrate the formation of technologically suitable n++-In0.25Ga0.75As junctions 5–7 nm deep, grown under As-rich conditions with a single δ-layer at temperatures as low as 400 °C. These junctions have peak Si concentrations between 6 × 1019 and 1 × 1020 cm?3 and high crystal quality. The surface self-organizes into smooth ripples or mounds, up to a peak dopant concentration of ~2 × 1020 cm-3. Above this value, enhanced diffusion of Si and In due to a large population of Ga vacancies increases lattice strain in the semiconductor epilayer, triggering a transition from 2D growth to 3D growth and the formation of In0.85Ga0.15As clusters on the surface.
关键词： Time-of-flight secondary ion mass spectrometry,Indium gallium arsenide,Semiconductor growth,Ultra-shallow junctions,Self-organization,Solid-state diffusion
更新于2025-09-19 17:13:59
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Correlated Secondary Ion Mass Spectrometry-Laser Scanning Confocal Microscopy Imaging for Single Cell-Principles and Applications
摘要： Secondary ion mass spectrometry (SIMS) as a powerful surface analysis technique has been widely applied in semiconductor industry and geology research. Recently, with the development of instrumental technology, SIMS is attracting more and more attention in life sciences. SIMS can provide surface MS spectra, 2D/3D chemical images and depth profiling of substances simultaneously. The minimal lateral resolution of 2D SIMS imaging is 80?100 nm, and the longitudinal resolution of 3D SIMS imaging is about 1–5 nm. However, owing to lack of specific ions to render the structures of organelles, SIMS imaging for single cells still have great challenges. Optical microscopy, in particular laser scanning confocal microscopy (LSCM), has been emerged to be an indispensable technique for single cell imaging and can obtain high spatial 2D/3D imaging to visualize the structures of organelles. Thus, the combinational use of SIMS and LSCM, which takes advantages of SIMS for molecular imaging and LSCM for morphological imaging, has greatly extended the application of SIMS imaging and ensured its accuracy at single cells level, providing novel insights into better understanding of the biological events inside cells. In this review, we focus on the development and application of SIMS imaging and the correlated SIMS and LSCM imaging in the research of cell biology and drug discovery. We anticipate that the combinational use of SIMS and LSCM imaging has promising future in biomedicine and life sciences.
关键词： Cell biology,Single cell imaging,Laser scanning confocal microscopy,Correlated secondary ion mass spectrometry and laser scanning confocal microscopy imaging,Secondary ion mass spectrometry,Review
更新于2025-09-16 10:30:52
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Influence of Silicon Layers on the Growth of ITO and AZO in Silicon Heterojunction Solar Cells
摘要： In this article, we report on the properties of indium tin oxide (ITO) deposited on thin-film silicon layers designed for the application as carrier selective contacts for silicon heterojunction (SHJ) solar cells. We find that ITO deposited on hydrogenated nanocrystalline silicon (nc-Si:H) layers presents a significant drop on electron mobility μe in comparison to layers deposited on hydrogenated amorphous silicon films (a-Si:H). The nc-Si:H layers are not only found to exhibit a larger crystallinity than a-Si:H, but are also characterized by a considerably increased surface rms roughness. As we can see from transmission electron microscopy (TEM), this promotes the growth of smaller and fractured features in the initial stages of ITO growth. Furthermore, secondary ion mass spectrometry profiles show different penetration depths of hydrogen from the thin film silicon layers into the ITO, which might both influence ITO and device passivation properties. Comparing ITO to aluminum doped zinc oxide (AZO), we find that AZO can actually exhibit superior properties on nc-Si:H layers. We assess the impact of the modified ITO Rsh on the series resistance Rs of SHJ solar cells with >23% efficiency for optimized devices. This behavior should be considered when designing solar cells with amorphous or nanocrystalline layers as carrier selective contacts.
关键词： secondary ion mass spectrometry (SIMS),indium tin oxide (ITO),series resistance,Aluminum doped zinc oxide (AZO),transparent conductive oxide (TCO),transmission electron microscopy (TEM),silicon heterojunction (SHJ)
更新于2025-09-16 10:30:52
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Three-Dimensional Imaging of Selenium and Chlorine Distributions in Highly Efficient Selenium-Graded Cadmium Telluride Solar Cells
摘要： Thin-film solar modules based on cadmium telluride (CdTe) technology currently produce the world’s lowest cost solar electricity. However, the best CdTe modules now contain a cadmium selenium telluride (CST) alloy at the front of the absorber layer. Despite this, research characterizing the behavior of selenium in alloyed CdTe devices is currently very limited. Here we employ advanced secondary ion mass spectrometry measurements to map the three-dimensional distribution of selenium in a graded CST/CdTe device for the first time. We find significant interdiffusion of selenium between the CST and CdTe layers in the cell, primarily out of the CST grain boundaries and up into the CdTe grain boundaries and grain fringes above. This results in significant lateral variations in selenium concentrations across grains and hence also lateral fields, which we estimate using the measured selenium concentrations.
关键词： secondary ion mass spectrometry (SIMS),Alloying,CdTe,solar energy
更新于2025-09-16 10:30:52