- 标题
- 摘要
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- 实验方案
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ZIF-8@H:ZnO Core-shell nanorods arrays/Si heterojunction self-powered photodetector with ultrahigh performance
摘要： The native defects will degrade the performance and stability of the optoelectric device. Herein, a zeolitic imidazolate framework-8 (ZIF-8)@H:ZnO core-shell nanorods arrays/Si heterojunction self-powered photodetector is demonstrated. Combining hydrogenation and ZIF-8 passivation, its photoresponsive characteristics are greatly enhanced. The photodetector exhibits superior detectivity of ~2.14×1016 Jones (1 Jones=1 cm Hz1/2 W-1), high responsivity of ~7.07×104 mA W-1, prominent sensitivity of ~2.08×1012 cm2 W-1 and broadband photodetection ranging from the ultraviolet to the near infrared. As critical figures of merit, its responsivity increases by nearly 5 orders of magnitude than that of pristine ZnO nanorods arrays/Si heterojunction photodetector. More importantly, the comprehensive performance of ZIF-8@H:ZnO core-shell nanorods arrays/Si heterojunction photodetector not only achieves a record high value for ZnO-based photodetectors reported so far, but also can be comparable with that of two-dimensional (2D) materials, zero-dimensional (0D) materials, topological insulators, perovskites and other oxides based self-powered photodetectors. The novel post-treatment strategy has great potential in developing high-performing self-powered photodetectors. Meanwhile, this work may be extended to other oxides based optoelectronic devices.
关键词： core-shell nanorods,heterojunction,passivation,self-powered photodetector,ZnO,ZIF-8,hydrogenation
更新于2025-11-14 17:04:02
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Fabrication of rapid response self-powered photodetector using solution-processed triple cation lead-halide perovskite
摘要： Self-powered photodetectors (PDs) are suitable for application in smart systems, image sensing and optical communications. Herein, a self-powered PD based on triple cation lead-halide perovskite (TCLP) is reported. We showed the effect of bromide concentration on the optical and structural properties of the TCLP films. Additionally, an environmental stability test was conducted and it was found that TCLP with 10% Br can remain stable for up to 128 days after exposure to ambient air. Using this material, a self-powered perovskite PD was fabricated and demonstrated an impressive performance with a responsivity of 0.52 A W?1, detectivity of 8.8×1012 Jones, on/off ratio of 7.3×105, and a rapid rise and decay time of 19 μs and 21 μs, respectively. This work offers a useful insight into the effects the fabrication method of the thin film plays in building low-cost, stable, and high-performance self-powered PDs for application in structural health monitoring, imaging, optical communication, and biomedical sensing.
关键词： surface coverage,perovskite,self-powered,photodetector,triple cation
更新于2025-09-23 15:19:57
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Fast-Response and Self-Powered Cu <sub/>2</sub> O/ZnO Nanorods Heterojunction UV-Visible (570 nm) Photodetectors
摘要： A fast, self-powered photodetector (PD) capable of UV to visible (570 nm) sensing based on the p-Cu2O/n-ZnO nanorods (NRs) heterostructure is reported. The PD shows a spectral response range from 380 nm to 570 nm, which is suitable for ambient light sensing applications. The PD exhibits good rectifying characteristics with a low leakage current and a low turn-on voltage of ～0.3 V. The responsivities of the self-powered PD are 0.24 A W?1 and 0.06 A W?1 at 380 and 450 nm, respectively. The rise/recovery time of the PD are 0.02/0.03 s and 0.01/0.02 s for UV (370 nm) and visible light (450 nm), respectively. Upon UV light illumination, the long, persistent photocurrent (or recovery time) caused by ZnO NRs can be eliminated using the self-powered mode.
关键词： fast-response,p-Cu2O/n-ZnO nanorods heterostructure,self-powered photodetector,UV-Visible sensing
更新于2025-09-23 15:19:57
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One-step fabrication of 1D p-NiO nanowire/n-Si heterojunction: development of self-powered ultraviolet photodetector
摘要： Even though there are reports on NiO-p/Si-n based photodetector, work along 1D NiO/Si self-powered photodetector remains unexplored. 1D materials offer better electron mobility and can provide ballistic transport channel, which helps in achieving high responsivity. In this work, direct single-step deposition of p-type NiO nanowires on n-type Si as a self-powered photodetector was successfully fabricated by engaging simple electrospinning technique. The structural properties as observed from XRD indicate highly crystalline NiO nanowires and FESEM images revealed 60 ~75 nm diameter with uniform distribution. Growth of nanowires by using stimuli polymer and its completely removal at high temperature was confirmed using TGA and XPS analysis. The responsivity of the fabricated photodetector was calculated to be 9.1 mA W-1 at zero bias, which can be attributed to the p-type NiO interface with the n-type Silicon, which creates an internal electrical field thereby assisting in the effective separation of the photogenerated carriers. Further, under illumination, at zero bias, the photogenerated current still exists suggesting a generation of internal voltage, which makes the fabricated device as self-powered. This fabrication method will enhance the photodetection properties, and it can be implemented in the fields of optoelectronic devices, sensors, and flexible electronics.
关键词： Electrospinning,NiO nanowires,1D material,Self-powered photodetector
更新于2025-09-23 15:19:57
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Self-powered ultra-broadband and flexible photodetectors based on the bismuth films by vapor deposition
摘要： Bismuth (Bi), as a topological semi-metallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO2 show fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radius and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in next generation of optoelectronic devices.
关键词： flexible,vapor deposition,ultra-broadband,self-powered,photodetector,Bi films
更新于2025-09-23 15:19:57
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Perovskite Transparent Conducting Oxide for the Design of Transparent, Flexible and Self-Powered Perovskite Photodetector
摘要： Transparent and flexible electronic devices are highly desired to meet the great demand for next-generation devices with lightweight, flexible and portable. Transparent conducting oxides (TCOs), such as indium-tin oxide (ITO), serve as fundamental components for the design of transparent and flexible electronic devices. However, indium is rare and expensive. Herein, we report the fabrication of low-cost perovskite SrVO3 TCO films on transparent and flexible mica substrates, and further demonstrate its utilization as a TCO electrode for building a transparent, flexible and self-powered perovskite photodetector. Superior stable optical transparency and electrical conductivity retain in SrVO3 after bending up to 105 cycles. Without an external power source, the constructed all-perovskite photodetector exhibits a high responsivity (42.5 mA W-1), fast response time (3.09/1.23 ms), as well as an excellent flexibility and bending stability after dozens of cycles of bending at the extremely 90 bending angle. Our results demonstrate that low-cost and structural compatible transition metal-based perovskite oxides, like SrVO3, as TCO electrodes have huge potential for building high-performance transparent, flexible and portable smart electronics.
关键词： Transparent conducting oxides,flexible,SrVO3,perovskite,self-powered photodetector
更新于2025-09-23 15:19:57
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Novel Self-Powered Photodetector with Binary Photoswitching Based on SnS <sub/><i>x</i> </sub> /TiO <sub/>2</sub> Heterojunctions
摘要： Binary photoresponse characteristics can realize the optical signal processing and logic operations. The UV photodetectors (PDs) with SnSx nanoflakes and TiO2 nanorod arrays (NRs) show a novel binary photoswitching behavior (change in current from positive to negative) by manipulating the light wavelength without external power source, utilizing the interfacial recombination of the photogenerated carriers in the type-I SnSx/TiO2 heterojunctions. The enhanced responsivity (R*) and detectivity and fast photoresponse time for self-powered SnSx/TiO2 PDs can be achieved by adjusting the phase ratio of SnS and SnS2 nanoflakes. The binary photoswitching in the self-powered UV PDs can be applied in the encrypted optical signal processing and imaging in some special conditions without external bias.
关键词： self-powered photodetector,SnSx/TiO2,binary photoresponse,heterojunctions
更新于2025-09-23 15:19:57
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Self-powered, all-solution processed, trilayer heterojunction perovskite-based photodetectors
摘要： Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-system and ultrafast carrier transfer of micro-system, have shown promising role in high-performance photodetectors. Here, in this paper a highly-sensitive trilayer in which the CdS nanorods (NRs) layer is sandwiched between ZnO/CsPbBr3 interface to reduce self-powered perovskite-based photodetector ITO/ZnO(70nm)/CdS(150nm)/CsPbBr3(200nm)/Au, ratio of 106 with a responsivity of 86 mA/W and a specific detectivity of 6.2×1011 Jones was obtained at zero bias under 85 μW/cm2 405 nm illumination, and its rise/decay time at zero bias is to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current 0.3/0.25 s. Therefore, the enhanced device performance strongly suggest the great potential of such the interfacial charge carriers’ recombination and the charge transport resistance, is presented. Due a kind of trilayer heterojunction devices for high-performance perovskite photodetectors.
关键词： On/Off current ratio,CdS nanorods (NRs) layer,trilayer heterojunction,specific detectivity,gradient energy alignment,Self-powered photodetector,high-performance
更新于2025-09-19 17:13:59
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Tunable p- and n-type Nb:TiO<sub>2</sub> and performance optimizing of self-powered Nb:TiO<sub>2</sub>/CdS photodetectors
摘要： For the first time, Niobium-doped titanium dioxide (Nb:TiO2, NTO) and cadmium sulfide (CdS) are selected for building self-powered photodetectors for optimizing the performance. The p- or n-type NTO and the band structures of the heterojunctions can be controlled by doping Nb and tuning the sputtering power. A low sputtering power tends to produce pure anatase crystals and a high power induces additional rutile phase aligned in the (200) orientation. NTO films deposited at a sputtering power of 120 W show p-type behavior attributed to the compensation of oxygen vacancies. NTO films deposited at 180 W contain mixed anatase and rutile phases with lattice imperfections and show n-type semiconductor property after annealing. By measuring the energy band structure of n-n-type anatase-TiO2/CdS, p-n-type anatase-NTO/CdS, and n-n-type mix-NTO/CdS heterojunctions, we identify the interface carrier motion characteristics and tune the energy band structure to optimize the performance of the photodetectors. Without any external power supply, the responsivities reaches at least 0.125A/W in the mix-NTO/CdS (light source: 550 nm) and the response speed is lower than 10ms, which can be used for building a self-powered photodetector.
关键词： TiO2,self-powered,photodetector
更新于2025-09-19 17:13:59