1：Experimental Design and Method Selection:

The study employed a simple electrospinning technique for the direct single-step deposition of p-type NiO nanowires on n-type Si substrates. The method selection was based on the need for a low-cost, versatile technique capable of producing high-quality and uniform nanowires with good control over diameter and composition.

2：Sample Selection and Data Sources:

Heavily doped n-type Si substrates were used as the base material for the heterojunction. The substrates were cleaned with hydrofluoric acid, water, and acetone before the electrospinning process.

3：List of Experimental Equipment and Materials:

The equipment included an electrospinning setup with a syringe and needle, a conventional oven for calcination, FE-SEM JEOL model JSM-7610F for morphology characterization, Rigaku Dmax2100 for XRD analysis, Perkin-Elmer model Pyris 1 for TGA measurements, and Keithley 4200 semiconductor characterization system for electrical properties analysis.

4：Experimental Procedures and Operational Workflow:

The process involved mixing PVA with Ni(NO3)2·6H2O precursor to form a viscous solution, electrospinning the solution onto Si substrates, calcinating the fibers at 450°C to form NiO nanowires, and depositing aluminum top contacts by electron beam technique.

5：Data Analysis Methods:

The structural properties were analyzed using XRD and FE-SEM, the thermal decomposition was confirmed by TGA, and the electrical properties were measured under UV illumination to assess photodetection performance.