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A simple route for manufacture of photovoltaic devices based on chalcohalide nanowires
摘要： The one-dimensional nanostructures of antimony sulfoiodide (SbSI) have received in last decade a great attention due to their outstanding photoferroelectric properties combined with narrow energy band gap beneficial for effective conversion of visible light into electric signal. This paper reports for the first time a simple and fast route for fabrication of photovoltaic devices based on SbSI nanowires. This method involves sonochemical synthesis of SbSI nanowires and spin-coating SbSI-polyacrylonitrile (PAN) composite, on indium tin oxide (ITO) substrate. In order to promote efficient charge transfer titanium dioxide (TiO2) and poly(3-hexylthiophene) (P3HT) were applied as an electron and hole transporting layers, respectively. Proposed method can be realized at mild conditions and does not require any additional high temperature treatment in contrast to other methods known for fabrication of SbSI photovoltaic structures. Fabricated structures exhibited an average short-circuit current density of 1.84(20) μA/cm2 and open circuit voltage of 69(13) mV under a white light illumination with power density of 100 mW/cm2. SbSI nanowires as lead-free nanomaterials are promising for solar energy harvesting and an application in photodetectors, that can operate in self-powered mode.
关键词： Nanocomposite,Self-powered photodetectors,Nanowires,Polyacrylonitrile (PAN),Antimony sulfoiodide (SbSI),Photovoltaic devices
更新于2025-09-23 15:19:57
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Solutiona??Processed Higha??Quality Cesium Lead Bromine Perovskite Photodetectors with High Detectivity for Application in Visible Light Communication
摘要： Cesium lead bromide (CsPbBr3) perovskite photodetectors (PDs) are attractive for applications in visible light communication (VLC) due to ultra-high detectivity and fast response speed. However, the fabrication of high-quality CsPbBr3 polycrystalline films using solution-based process is very challenging. Due to the low solubility of CsBr in precursor solutions, solution-processed CsPbBr3 films are typically discontinuous and porous, hindering the performance of resulting PDs. Herein, a facile and modified sequential spin-coating method is introduced to prepare high-crystallinity, pinhole-free CsPb2Br5-CsPbBr3 perovskite films with an average grain size of ≈1 μm. The hole-transport-layer-free (HTL-free) PDs based on the CsPb2Br5-CsPbBr3 perovskite films show high performance parameters, including the responsivity of 0.11 A W?1, the detectivity of 1.4 × 1012 Jones, a linear dynamic range of 128.6, and an on/off ratio of 1.5 × 106. The PDs outperform other HTL-free perovskite PDs and are comparable to the p–i–n perovskite PDs reported in the literature. In addition, the high-performance CsPb2Br5-CsPbBr3 PDs are applied in VLC by using the PD as a self-powered signal receiver of voice commands in a simulated room. This work uniquely combines the features of high-performance self-powered perovskite PDs with VLC techniques, paving the path to wide applications of all-inorganic perovskite PDs.
关键词： CsPb2Br5-CsPbBr3,perovskites,self-powered photodetectors,visible light communication
更新于2025-09-23 15:19:57
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Asymmetric Contact Induced Self-Powered 2D In2S3 Photodetector towards High-Sensitivity and Fast-Response
摘要： Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieve self-powered operation by adopting geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with asymmetric contact is combined with traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA/W), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.
关键词： high sensitivity,fast response,asymmetric contact,Self-powered photodetectors,2D In2S3,photogating effect
更新于2025-09-19 17:13:59
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Self-powered perovskite/CdS heterostructure photodetectors
摘要： Methylammonium lead halide perovskites have gained a lot of attention because of their remarkable physical properties and potential for numerous (opto)electronic applications. Here, high-performance photodetectors based on CH3NH3PbI3 (MAPbI3)/CdS heterostructures, are demonstrated. The resulting self-powered MAPbI3/CdS photodetectors show excellent operating characteristics including a maximum detectivity of 2.3×1011 Jones with responsivity of 0.43 A/W measured at 730 nm. A temporal response time of less than 14 ms was achieved. The mechanisms of charge separation and transport at the interface of the MAPbI3/CdS junction were investigated via conductive atomic force microscopy (C-AFM) and photoconductive atomic force microscopy (PC-AFM). Obtained results show that grain boundaries exhibit higher photocurrent than flat regions of the top perovskite layer, which indicates that excitons preferentially separate at the grain boundaries of the perovskite thin film, i.e. at the edges of the MAPbI3 crystals. The study of the photoelectric mechanism at the nanoscale suggests the device performance could potentially be fine-tuned through grain boundary engineering, which provides essential insights for the fabrication of high-performance photodetector. The demonstrated self-powered photodetector is promising for numerous applications in low-energy consumption optoelectronic devices.
关键词： perovskite,photodetector,heterojunction,photovoltaic,self-powered photodetectors,photoconductive atomic force microscopy
更新于2025-09-16 10:30:52
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Cross‐Bar SnO <sub/>2</sub> ‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity
摘要： An cross-bar structure is employed to design a transparent p-n junction-based photodetector. The device consisting of aligned n-SnO2 and p-NiO nanofibers is prepared via a mature electrospinning process that is suitable for commercial applications. It exhibits a high detectivity of 2.33 × 1013 Jones under 250 nm illumination at ?5 V, outperforming most state-of-art SnO2-based UV photodetectors. It is also endowed with a self-powered feature due to a photovoltaic effect from the p-n junction, resulting in a photocurrent of 10?10 A, responsivity of 30.29 mA W?1 at 0 V bias, and detectivity of 2.24 × 1011 Jones at 0.05 V bias. Moreover, the device is highly transparent (over 90% toward visible light) due to the wide band gap of photoactive materials and well-designed cross-bar fiber structure. Additionally, an n-SnO2-p-ZnO:Ag (Ag doped ZnO) self-powered UV photodetector is fabricated that shows good performance and give another example of the use of the cross-bar structure.
关键词： p-n junctions,self-powered photodetectors,transparent electronics
更新于2025-09-11 14:15:04