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Volatile Memory Characteristics of a Solution-Processed Tin Oxide Semiconductor
摘要： In this paper, we demonstrate and study volatile memory characteristics of the sol-gel SnOx semiconductor. The SnOx exhibits a significant self-rectifying behavior and high nonlinearity. Low reverse-biased currents and high forward-biased currents are observed in the positive and negative voltage regions, respectively. The rectifying ratio can reach 3.7 × 10^5, and the selection ratio (I@Vread/I@0.5Vread) is 10^2. A pinched current hysteresis is found in the forward-biased region, which indicates the volatile memory characteristics of the SnOx memory. The resistance ratio between the high-resistance state (HRS) and low-resistance state (LRS) is ~10^5. In addition, the stability test reveals that the memory can repeatedly operate for over 1.5 × 10^3 cycles.
关键词： Hysteresis,Solution process,Oxide semiconductor,Thin film,Electrical characteristics
更新于2025-09-23 15:22:29
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Oxidized Metal Schottky Contacts on (010) β-Ga2 O 3
摘要： Oxidized Ir, Pd, Pt, Ag, and Au Schottky contacts (SCs) were fabricated on (010) β-Ga2O3 single crystal substrates via reactive rf sputtering using an O2:Ar plasma. The use of in-situ oxidizing conditions resulted in SCs with very high rectifying barriers in excess of 2.0 eV for all the metals investigated, representing an increase of 0.4 to 0.9 eV compared to the corresponding plain metal versions. Both the plain and oxidized metal SCs showed evidence of Fermi Level pinning with their laterally homogeneous barrier heights lying in narrow ranges of ~1.3 to 1.5 eV and ~2.2 to 2.4 eV, respectively, with little correlation with metal work function. This was attributed to the influence of metal-induced oxygen vacancies and gap states at the SC interface, respectively. The very high barriers of the oxidized SCs resulted in excellent high temperature performance with ~10 orders of magnitude of rectification at 180 oC, indicating the potential of this technique for the fabrication of high temperature unipolar devices.
关键词： Metal Induced Gap States,Fermi Level Pinning,Oxygen Vacancies,Semiconductor Interfaces,Schottky Diodes
更新于2025-09-23 15:22:29
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Threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes with high temperature stability
摘要： This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was ascribed to the conductive path formed by traps in the insulating layer at the regrowth interface after soft breakdown. The device can reliably switch more than 1000 cycles at both room temperature and 300 oC with small fluctuation on the set and reset voltage. The set voltage increased with the increasing temperature due to the enhanced thermal detrapping effect that made it harder to form conductive path at high temperatures. Besides, the device showed memory behaviors when the reset voltage was higher than 4.4 V. This work can serve as important references to further developing GaN-based memory devices and integrated circuits.
关键词： memory,breakdown,wide bandgap semiconductor,threshold switching,p-n diodes,Gallium nitride
更新于2025-09-23 15:22:29
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[IEEE 2018 Eleventh International Conference "Management of large-scale system development" (MLSD 2018) - Moscow (2018.10.1-2018.10.3)] 2018 Eleventh International Conference "Management of large-scale system development" (MLSD - Portable Devices for Monitoring Ultraviolet Radiation
摘要： The article deals with issues related to the use of the new elemental base in some control and monitoring systems for the principles of large-scale objects, constructing portable devices for monitoring ultraviolet radiation. These are the semiconductor sensors - a doser that gives a quantitative result on a digital indicator, either delivering a light or sound signal when reaching a predetermined radiation dose and a dosimeter that measures the intensity of UV radiation or the dose received in real physical units of measurement.
关键词： UV radiation,control systems,sensor,large-scale objects,semiconductor,monitoring,portable device
更新于2025-09-23 15:22:29
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Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors; 溶液法制备低电压及高性能非晶GaSnO薄膜晶体管;
摘要： Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel layer was applied in the high-k Al2O3 thin film transistor (TFT) with a low operation voltage of 2 V, a maximum field-effect mobility of 69 cm2 V?1 s?1, a subthreshold swing (SS) of 76 mV dec?1, a threshold voltage of 0.67 V and an on-off current ratio of 1.8×107. The solution-processed amorphous-GTO-TFTs would promote the development of low-consumption, low-cost and high performance In-free TFT devices.
关键词： GTO semiconductor films,thin-film transistor,Al2O3 dielectric,stability
更新于2025-09-23 15:22:29
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[IEEE 2018 2nd International Conference on Telematics and Future Generation Networks (TAFGEN) - Malaysia (2018.7.24-2018.7.26)] 2018 2nd International Conference on Telematics and Future Generation Networks (TAFGEN) - Modelling of Different Types of SOA Characteristics
摘要： An investigation of gain, optical power, and amplified spontaneous emission (ASE) noise characteristics of different types of semiconductor optical amplifier (SOA) operating in the conventional (C-) band is carried out. The types of SOAs include linear, nonlinear and in-line SOA that are customized configuration through OptiSystem software. These SOAs are further simulated in MATLAB using a numerical steady-state model to determine and evaluate their performance. The results showed that the linear SOA has the most ideal and distinct characteristics, as compared to the nonlinear and in-line SOAs rendering it more suitable as gain medium in the multiwavelength fiber laser (MWFL) application.
关键词： modelling,linear and nonlinear types,semiconductor optical amplifier,multiwavelength fiber laser
更新于2025-09-23 15:22:29
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Reverse annealing studies of irradiated silicon by use of current–voltage measurements
摘要： The annealing behaviour of irradiated silicon p-i-n diodes has been investigated by use of I–V measurements. The radiation-induced damage is achieved by the use of 1 MeV neutrons. The results have been analysed and a striking feature is easily noticeable where defects that do not anneal out alter their activity and behave more as generation centres. This means that they are situated in the upper half of the band gap where they act to increase the carrier density and the measured current. The increase in current starts to occur at around 100 days and a change in trap activity at around 180 days after irradiation. The device behaviour, however, remains ohmic throughout indicating that a defect level that is responsible for relaxation behaviour is stable. This study would assist in demonstrating stability of silicon radiation detectors during their operational time.
关键词： Diode,Current,Radiation,Semiconductor,Silicon,Annealing
更新于2025-09-23 15:22:29
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INVESTIGATION OF FREQUENCY NOISE AND SPECTRUM LINEWIDTH IN SEMICONDUCTOR OPTICAL AMPLIFIER
摘要： The characteristics of FM noise and linewidth of semiconductor optical amplifier without facet mirrors were theoretically analyzed and experimentally confirmed. The concept of discrete longitudinal mode for the spontaneous emission was introduced as the basis of quantum mechanical characteristics, allowing the quantitative examination of noise sources. The continuously broaden output spectrum profile of the amplified spontaneous emission (ASE) was well explained as a spectrum broadening of each longitudinal mode. We found that the linewidth of the inputted signal light hardly changes by the optical amplification in the SOA. The FM noise increases proportional to square value of the noise frequency and less affected by the electron density fluctuation, the linewidth enhancement factor and the ASE. The higher FM noise in the higher noise frequency is caused by the intrinsic phase fluctuation on the optical emission. The characteristics of the linewidth and the noise frequency dependency were experimentally confirmed.
关键词： noise,frequency noise,Optical fiber communication,linewidth,semiconductor optical amplifier
更新于2025-09-23 15:22:29
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Study on Thallium bromide Radioactive Detector
摘要： Thallium bromide (TlBr) is a compound semiconductor material, which can be used for X-ray and gamma-ray detectors and can be used at room temperature. It has excellent physical properties, high atomic number and density, wide bandgap (B=2.68 eV), and low ionization energy. Compared with other X-ray and gamma-ray detection materials, TlBr devices have high detection efficiency and excellent energy resolution performance. So TlBr is suitable for housing in small tubes or shells, and it can be widely used in nuclear material measurement, safeguards verification, national security, space high-energy physics research and other fields. Based on the fabrication of TlBr prototype detector, this paper focuses on the device fabrication and signal acquisition technology. Gamma-ray spectrum measurements and performance tests are carried out with AM-241 radioactive source. The results show that the special photoelectric peak of 59.5 keV is clearly visible, and the optimal resolution is 4.15 keV (7%).
关键词： Compound semiconductor,Safeguards verification,TlBr detector
更新于2025-09-23 15:22:29
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Photocatalytic Overall Water Splitting on RuO <sub/>2</sub> -loaded Sm <sup>3+</sup> -doped CeO <sub/>2</sub> with Heterogenous Doping Structure
摘要： Photocatalytic overall water splitting into hydrogen and oxygen on RuO2-loaded Sm3+-doped CeO2 was examined. Pure CeO2 showed a negligible small activity, however Sm3+ doped CeO2 with heterogeneous doping structure synthesized by solid state reaction exhibited an efficient activity. Whereas, Sm3+-doped CeO2 with homogeneous doping structure showed little activity when prepared by co-precipitation method. In this study, relation between photocatalytic activity and surface doping structure was investigated.
关键词： Heterogeneous doping structure,Semiconductor photocatalyst,Overall water splitting
更新于2025-09-23 15:22:29